TORIUMI Akira

J-GLOBAL         Last updated: Jan 22, 2003 at 00:00
 
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Name
TORIUMI Akira
Affiliation
The University of Tokyo
Section
The Graduate School of Engineering
Degree
(BLANK)

Research Interests

 
 

Research Areas

 
 

Education

 
 
 - 
1983
Graduate School, Division of Engineering, The University of Tokyo
 
 
 - 
1978
Faculty of Science, The University of Tokyo
 

Misc

 
IEEE Trans. Electron Devices   34(7) 1501-1508   1987
IEEE Trans. Electron Devices   35(7 Pt.1) 999-1003   1988
Solid State Electronics   32(12) 1519-1525   1989

Books etc

 
Study of Soft Breakdown in Thin SiO2 Films by Carrier-Separation Technique and Breakdown-Transient Modulation, The Physics and Chemistry of SiO2 and The Si-SiO2 Interface-4
The Electrochemical Society, Inc   2000   

Works

 
US Pateut #5,463,234 High Speed Simiconductor Gain Memory Cell with Mininal Area Occupancy
1995
US Patent #5,679,961 Correlation Tunnel Device
1997
US Patent #5,754,077 Semiconductor Integrated Circuit Having Plural Functional Blocks
1998

Research Grants & Projects

 
Study on Electrical Reliability of SiO2
Study on Single Electron Devices
Study on Silicon Device Physics