2002年3月
Study on Zr-silicate interfacial layer of ZrO2 metal-insulator-semiconductor structure
APPLIED PHYSICS LETTERS
- ,
- ,
- ,
- 巻
- 80
- 号
- 11
- 開始ページ
- 1987
- 終了ページ
- 1989
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1063/1.1454231
- 出版者・発行元
- AMER INST PHYSICS
We have investigated the physical and dielectric properties of the Zr-silicate interfacial layer of ZrO2 metal-insulator-semiconductor (MIS) structure fabricated by pulsed-laser ablation deposition. It was found that an ultrathin Zr-silicate interfacial layer is formed on a Si substrate as a result of the reaction between ZrO2 and Si. We showed that MIS capacitors consisting solely of the ultrathin Zr-silicate interfacial layer could be fabricated by selective etching of the ZrO2 layer. The Zr-silicate interfacial layer showed a small equivalent oxide thickness of 0.8 nm, a dielectric constant of 8-9, and low leakage less than 1 A/cm(2) at V-g of -1 V. (C) 2002 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.1454231
- ISSN : 0003-6951
- Web of Science ID : WOS:000174363300044