MISC

2009年3月

Electrical and Magnetic Properties of CeAu2Si2

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
  • Yuuki Ota
  • Kiyohiro Sugiyama
  • Yuichiro Miyauchi
  • Yuji Takeda
  • Yasunori Nakano
  • Yusuke Doi
  • Keisuke Katayama
  • Nguyen D. Dung
  • Tatsuma D. Matsuda
  • Yoshinori Haga
  • Koichi Kindo
  • Tetsuya Takeuchi
  • Masayuki Hagiwara
  • Rikio Settai
  • Yoshichika Onuki
  • 全て表示

78
3
記述言語
英語
掲載種別
DOI
10.1143/JPSJ.78.034714
出版者・発行元
PHYSICAL SOC JAPAN

We succeeded in growing a high-quality single-crystal of CeAu2Si2, which was previously reported to be highly sample-dependent in terms of electrical and magnetic properties. CeAu2Si2 is not a simple AF1-type anti ferromagnet. but reveals three antiferromagnetic transitions in a narrow temperature range from the Neel temperature T-N1 = 9.6 K to T-N3 = 8.0 K. A clear metamagnetic transition with two steps was observed at H-c1 = 53 kOe and H-c2 = 55 kOe in the magnetization curve below 5 K for the magnetic field along an anti ferromagnetic easy-axis, namely, the tetragonal [001] direction, with a saturation moment of 1.53 mu B/Ce. The magnetic susceptibility and magnetization are anisotropic, which are well explained by results of crystalline electric field analyses. We also studied the de Haas-van Alphen (dHvA) effect. The detected dHvA branches are found to be consistent with those of a non-4f reference compound such as YCu2Si2.

リンク情報
DOI
https://doi.org/10.1143/JPSJ.78.034714
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000264596000036&DestApp=WOS_CPL
ID情報
  • DOI : 10.1143/JPSJ.78.034714
  • ISSN : 0031-9015
  • Web of Science ID : WOS:000264596000036

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