2019年9月
Morphology and Electronic Structure of Sn-Intercalated TiS2(0001) Layers
JOURNAL OF PHYSICAL CHEMISTRY C
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- 巻
- 123
- 号
- 36
- 開始ページ
- 22293
- 終了ページ
- 22298
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1021/acs.jpcc.9b05492
- 出版者・発行元
- AMER CHEMICAL SOC
The surface morphology and electronic structure of layered semiconductor 1-trigonal phase titanium disulfide, i.e., 1T-TiS2(0001), with Sn intercalation, have been studied by scanning tunneling microscopy (STM), low-energy electron diffraction, synchrotron radiation photoemission spectroscopy, and first-principles calculations based on density functional theory (DFT). From the STM images, we show that Sn atoms are intercalated into TiS2 layers. The electronic structure exhibits electron Fermi pockets around M points and characteristic band dispersions around the M and K points after Sn intercalation. The DFT calculations reveal the geometrical site of intercalated Sn atom, which is surrounded by six sulfur atoms with D-3d symmetry. The calculated electronic band structures are in good agreement with the experimental band structure.
- リンク情報
- ID情報
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- DOI : 10.1021/acs.jpcc.9b05492
- ISSN : 1932-7447
- eISSN : 1932-7455
- Web of Science ID : WOS:000486360900048