論文

査読有り
2006年

Monolithic Pixel Detector in a 0.15 mu m SOI Technology

2006 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOL 1-6
  • Y. Arai
  • M. Hazumi
  • Y. Ikegami
  • T. Kohriki
  • O. Tajima
  • S. Terada
  • T. Tsuboyama
  • Y. Unno
  • H. Ushiroda
  • H. Ikeda
  • K. Hara
  • H. Ishino
  • T. Kawasaki
  • E. Martin
  • G. Varner
  • H. Tajima
  • M. Ohno
  • K. Fukuda
  • H. Komatsubara
  • J. Ida
  • H. Hayashi
  • 全て表示

開始ページ
1440
終了ページ
1444
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
出版者・発行元
IEEE

We describe a new pixel detector development project using a 0.15 mu m fully-depleted CMOS SOI (Silicon-On-Insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode Test Element Group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to beta-rays is confirmed. Back gate effects on the top circuits are observed and discussed.

リンク情報
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000288875601105&DestApp=WOS_CPL
ID情報
  • ISSN : 1082-3654
  • Web of Science ID : WOS:000288875601105

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