2006年
Monolithic Pixel Detector in a 0.15 mu m SOI Technology
2006 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOL 1-6
- 開始ページ
- 1440
- 終了ページ
- 1444
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- 出版者・発行元
- IEEE
We describe a new pixel detector development project using a 0.15 mu m fully-depleted CMOS SOI (Silicon-On-Insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode Test Element Group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to beta-rays is confirmed. Back gate effects on the top circuits are observed and discussed.
- リンク情報
- ID情報
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- ISSN : 1082-3654
- Web of Science ID : WOS:000288875601105