2005年6月
Radiation monitoring in Mrad range using radiation-sensing field-effect transistors
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
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- 巻
- 545
- 号
- 1-2
- 開始ページ
- 252
- 終了ページ
- 260
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.nima.2005.01.347
- 出版者・発行元
- ELSEVIER SCIENCE BV
In many of the recent e(+)e(-) particle physics experiment, monitoring of the accumulated dose in silicon is essential to maximize the lifetime of silicon vertex detectors operating in severe radiation environments Using radiation-sensing field-effect transistors (RadFET) as radiation monitoring devices. We Studied their responses during irradiation and during subsequent annealing. The relation between the RadFET response and the dose was determined by irradiations with a Co-60 source with known activity. The study of annealing at three different temperatures showed that RadFETS gradually anneal for up to 40%. Annealing can be fitted h a sum of two exponential functions with time constants of 3 and 85 days. (c) 2005 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.nima.2005.01.347
- ISSN : 0168-9002
- Web of Science ID : WOS:000229950000021