We describe a new pixel detector development project using a 0.15 μm fully-depleted CMOS SOI (Silicon-On-Insulator) technology. Additional processing steps for creating substrate implants and contacts to form sensor and electrode connections were developed for this SOI process. A diode Test Element Group and several test chips have been fabricated and evaluated. The pixel detectors are successfully operated and first images are taken and sensibility to β-rays is confirmed. Back gate effects on the top circuits are observed and discussed. © 2006 IEEE.