2017年5月1日
Initial surface silicidation on Ni(110)
Surface Science
- ,
- ,
- 巻
- 659
- 号
- 開始ページ
- 1
- 終了ページ
- 4
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.susc.2017.01.003
- 出版者・発行元
- Elsevier B.V.
Initial silicide formation on a Ni(110) surface was studied by scanning tunneling microscopy (STM) in an ultrahigh vacuum. Less than 0.5 ML of Si deposition initiated a Si-Ni mixed layer by displacing substrate Ni, and dark sites were formed in the STM images. A 0.5 ML-Si deposited surface showed that Si and Ni were alternately aligned in a close-packed [11¯0] row whereas Si pairs aligned along the [001] direction forming p(1×2), obliquely aligned forming c(2×2), or even straightly-and-obliquely aligned forming c(4×2) superstructures. A first-principles total energy calculation showed that the p(1×2) and c(4×2) structures had almost the same energy while the c(2×2) structure gave 13 meV/1×1 higher energy. Because a Si-Si bond in the close-packed [11¯0] row is energetically unfavorable, Si deposition of more than 0.5 ML did not further replace the substrate Ni, but silicide islands were nucleated along with a trench structure.
- ID情報
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- DOI : 10.1016/j.susc.2017.01.003
- ISSN : 0039-6028
- SCOPUS ID : 85014820075