Dec 30, 2002
The surface potential of the Si nanostructure on a Si (1 1 1) 7 × 7 surface generated by contact of a cantilever tip
Applied Surface Science
- ,
- Volume
- 202
- Number
- 3-4
- First page
- 218
- Last page
- 222
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1016/S0169-4332(02)00926-1
A Si microstructure on a Si (1 1 1) 7 × 7 surface was investigated by a noncontact atomic force microscopy (ncAFM) and a scanning Kelvin probe microscopy (SKPM) in ultra high vacuum. The Si microstructure was generated by intermittent contact of a cantilever tip. It was found by the ncAFM and SKPM observations that the Si mound with a height of 1 Å and a width of 30 nm was generated, and the surface potential of the small mound was 0.1 V lower than that of the 7 × 7 domain. A quenched Si (1 1 1) surface was also observed by the ncAFM and SKPM. The differences in height and potential between the reconstructed 7 × 7 and the disordered 1 × 1 domains were about 1 Å and 0.1 V, respectively. Therefore, it was concluded that there appeared the disordered 1 × 1 structure on the surface of the Si small mound, lowering the surface potential by 0.1 V. © 2002 Elsevier Science B.V. All rights reserved.
- Link information
- ID information
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- DOI : 10.1016/S0169-4332(02)00926-1
- ISSN : 0169-4332
- CiNii Articles ID : 80015718071
- SCOPUS ID : 0037203057