論文

査読有り
2017年10月23日

High-Performance CsPb1−xSnxBr3 Perovskite Quantum Dots for Light-Emitting Diodes

Angewandte Chemie - International Edition
  • Hung-Chia Wang
  • Weigao Wang
  • An-Cih Tang
  • Hsin-Yu Tsai
  • Zhen Bao
  • Toshiyuki Ihara
  • Naoki Yarita
  • Hirokazu Tahara
  • Yoshihiko Kanemitsu
  • Shuming Chen
  • Ru-Shi Liu
  • 全て表示

56
44
開始ページ
13650
終了ページ
13654
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1002/anie.201706860
出版者・発行元
Wiley-VCH Verlag

All inorganic CsPbBr3 perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot-injection method to partially replace the toxic Pb2+ with highly stable Sn4+. Meanwhile, the absolute photoluminescence quantum yield of CsPb1−xSnxBr3 increased from 45 % to 83 % with SnIV substitution. The transient absorption (TA) exciton dynamics in undoped CsPbBr3 and CsPb0.67Sn0.33Br3 QDs at various excitation fluences were determined by femtosecond transient absorption, time-resolved photoluminescence, and single-dot spectroscopy, providing clear evidence for the suppression of trion generation by Sn doping. These highly luminescent CsPb0.67Sn0.33Br3 QDs emit at 517 nm. A device based on these QDs exhibited a luminance of 12 500 cd m−2, a current efficiency of 11.63 cd A−1, an external quantum efficiency of 4.13 %, a power efficiency of 6.76 lm w−1, and a low turn-on voltage of 3.6 V, which are the best values among reported tin-based perovskite quantum-dot LEDs.

リンク情報
DOI
https://doi.org/10.1002/anie.201706860
ID情報
  • DOI : 10.1002/anie.201706860
  • ISSN : 1521-3773
  • ISSN : 1433-7851
  • SCOPUS ID : 85031730681

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