1999年8月
A near-infrared photoluminescence study of GaAs nanocrystals in SiO2 films formed by sequential ion implantation
JOURNAL OF APPLIED PHYSICS
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- 巻
- 86
- 号
- 3
- 開始ページ
- 1762
- 終了ページ
- 1764
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.370960
- 出版者・発行元
- AMER INST PHYSICS
We have studied photoluminescence (PL) properties of Ga+ and As+ implanted SiO2 films on Si substrate. After thermal annealing, zinc blende GaAs nanocrystals are formed in SiO2 films and several PL bands appear in the red and near-infrared spectral region. Defects and impurities in GaAs nanocrystals and SiO2 cause weak luminescence in the near-infrared spectral region at low temperatures. After low-energy deuterium implantation, the defect PL intensity decreases and the red PL from GaAs nanocrystals is clearly observed. It is demonstrated that GaAs/SiO2 nanocompostites with low defect density are fabricated by sequential ion implantation followed by thermal annealing and hydrogen passivation. (C) 1999 American Institute of Physics. [S0021-8979(99)00215-7].
- リンク情報
- ID情報
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- DOI : 10.1063/1.370960
- ISSN : 0021-8979
- Web of Science ID : WOS:000081458800098