2014年2月
Temperature-dependent photocarrier recombination dynamics in Cu2ZnSnS4 single crystals
APPLIED PHYSICS LETTERS
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- 巻
- 104
- 号
- 8
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4866666
- 出版者・発行元
- AMER INST PHYSICS
Time-resolved photoluminescence (PL) measurements have been used to study the temperature-dependent photocarrier recombination dynamics in Cu2ZnSnS4 (CZTS) single crystals. We found a significant change of nearly four orders of magnitude of the PL decay time, from microseconds at low temperatures to subnanoseconds at room temperature. The slow PL decay at low temperatures indicates localization of the photocarriers at the band tails. Due to the large band tail states, the PL decay time depends strongly on both the photon energy and excitation density. It is pointed out that the drastically enhanced nonradiative recombination at high temperatures is one of the main factors that determine the power conversion efficiency of CZTS-based solar cells. (C) 2014 AIP Publishing LLC.
- リンク情報
- ID情報
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- DOI : 10.1063/1.4866666
- ISSN : 0003-6951
- eISSN : 1077-3118
- Web of Science ID : WOS:000332619100042