MISC

1993年6月

WIDE-BAND HIGH-POWER AMPLIFIER DESIGN USING NOVEL BAND-PASS FILTERS WITH FETS PARASITIC REACTANCES

IEICE TRANSACTIONS ON ELECTRONICS
  • Y ITOH
  • ,
  • T TAKAGI
  • ,
  • H MASUNO
  • ,
  • M KOHNO
  • ,
  • T HASHIMOTO

E76C
6
開始ページ
938
終了ページ
943
記述言語
英語
掲載種別
出版者・発行元
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG

A wideband high power amplifier design using a novel band-pass filter with FET's parasitic reactances has been developed. The feature of this design is in that it can provide wide bandwidth and high gain of high power amplifiers. Furthermore, the lower cutoff frequency and bandwidth can be varied independently. With the use of this design, a Ku-band two-stage high power amplifier having a bandwidth of 18% has achieved a linear gain of 9.75 +/- 1.75 dB, a saturated output power of greater than 37 dBm, and a power-added efficiency of greater than 10.4%.

リンク情報
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:A1993LK29700010&DestApp=WOS_CPL
ID情報
  • ISSN : 0916-8524
  • eISSN : 1745-1353
  • Web of Science ID : WOS:A1993LK29700010

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