1993年6月
WIDE-BAND HIGH-POWER AMPLIFIER DESIGN USING NOVEL BAND-PASS FILTERS WITH FETS PARASITIC REACTANCES
IEICE TRANSACTIONS ON ELECTRONICS
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- 巻
- E76C
- 号
- 6
- 開始ページ
- 938
- 終了ページ
- 943
- 記述言語
- 英語
- 掲載種別
- 出版者・発行元
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
A wideband high power amplifier design using a novel band-pass filter with FET's parasitic reactances has been developed. The feature of this design is in that it can provide wide bandwidth and high gain of high power amplifiers. Furthermore, the lower cutoff frequency and bandwidth can be varied independently. With the use of this design, a Ku-band two-stage high power amplifier having a bandwidth of 18% has achieved a linear gain of 9.75 +/- 1.75 dB, a saturated output power of greater than 37 dBm, and a power-added efficiency of greater than 10.4%.
- リンク情報
- ID情報
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- ISSN : 0916-8524
- eISSN : 1745-1353
- Web of Science ID : WOS:A1993LK29700010