BHUIYAN ghani Ashraful

Two-step Growth Epitaxial InN on GaP(III)B substrate using MOCVD 

Extended Abstracts, Annual Meeting 2000 Hokuriku Chapters of Electrical Societies 2000年  

High temperature Growth of InN on Gap(III)B Substrate 

Extended Abstracts, The 61th Autumn Meeting Japan Society of Applied Physics 2000年  

Significance of the suppression of substrate surface Nitridation for Epitaxial Growth of Wurtzite InN on Gap(III)and InP(III)Substrates 

Proceedings of the International Workshop on Nitride semiconductors(2000), IPAP Conference series 2000年  

Nitridation effects of Gap(III)B substrate on MOCVD growth of InN 

Journal of Crystal Growth, Elsevier Science 2000年  

MOCVD Growth of InN on GaP(III)B substrate 

Extended Abstracts, The 60th Autumn Meeting Japan Society of Applied Physics 1999年