柴田 智彦

New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth 

Compound Semiconductors 2001 (Inst. Phys. Conf. Ser. No. 170) 795 2002年  

New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth 

Compound Semiconductors 2001 (Inst. Phys. Conf. Ser. No. 170) 795 2002年  

AlN Epitaxial Growth on Off-Angle R-Plane Sapphire Substrates by MOCVD 

Journal of Crystal Growth Vol. 229 (2001) 63 2001年  

AlN Epitaxial Growth on Off-Angle R-Plane Sapphire Substrates by MOCVD 

J. Cryst. Growth 229 63-68 2001年  

Surface Acoustic Wave Filters at 2.4GHz using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD 

IPAP Conf. Series Vol. 1, (2000) 981 2000年  

2.4GHz SAW Filters using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD 

2000 IEEE Ultrasonics Symposium Proceedings, (2000) 287 2000年  

Surface Acoustic Wave Filters at 2. 4 GHz using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD 

Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 981 2000年  

2. 4 GHz SAW FILTERS USING AlN DEPOSITED ON OFF-ANGLE R-PLANE SAPPHIRE SUBSTRATES BY MOCVD 

Proc. IEEE Ultras. Symp., 2000 287 2000年  

Magnetic Susceptibility of YBa₂(Cu_1-xFex)₃Oy Prepared by Various Heat Treatments 

Jpn. J. Appl. Phys. 30 L175 1991年  

New Buffer Layer Teachnigue Using Underlying Epitaxial ALN Films for High-guality GoN Growth 

Mat. Ros. Soc. Symp. Proc. Vol.693, p219-223  

Characterrigation of High-guality Epitaxial ALN Films Grawn by MOVPE 

Mat. Ros. Soc. Symp. Proc. Vol.693, p541-544  

New Buffer Layer Teachnigue Using Underlying Epitaxial ALN Films for High-guality GoN Growth 

Mat. Ros. Soc. Symp. Proc. Vol.693, p219-223  

Characterrigation of High-guality Epitaxial ALN Films Grawn by MOVPE 

Mat. Ros. Soc. Symp. Proc. Vol.693, p541-544