論文

査読有り
2018年

Exposure characteristics of ternary copolymerization positive tone electron beam resist containing p-chloro-alpha-methylstyrene

PHOTOMASK JAPAN 2018: XXV SYMPOSIUM ON PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY
  • Kenta Tamaru
  • ,
  • Shunsuke Ochiai
  • ,
  • Yukiko Kishimura
  • ,
  • Hironori Asada
  • ,
  • Ryoichi Hoshino
  • ,
  • Minako Iwakuma

10807
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1117/12.2324709
出版者・発行元
SPIE-INT SOC OPTICAL ENGINEERING

p-Chloro-alpha-methylstyrene (PCMS) has the chemical structure as the chlorine atom is introduced in phenyl group of alpha-methylstyrene (MS). In the present study, we synthesized a ternary copolymer consisted with methyl-alpha-chloroacrylate (ACM), PCMS and MS having the composition ratio of 53:16:31 with the averaged molecular weight (Mw) of 370k, in order to improve sensitivity while maintaining the same resolution as conventional ACM-MS resist. ACM-MS resist having the composition ratio of 46:54 with Mw of 290k is also synthesized to compare exposure characteristics. Firstly, solubility of ACM-PCMS-MS resist without the electron beam exposure for ester solvents is investigated. The dissolving rate of ACM-PCMS-MS resist for amyl solvent is markedly lower compared with ACM-PCMS resist having the composition ratio of 49:51 with Mw=30k reported before, which also includes the effect of the larger molecular weight. Sensitivity curves are made and line and space (L/S) patterns down to 20/20 nm (design value) are formed by using an electron beam writing system with an acceleration voltage of 50 kV. The 20/20 nm L/S pattern is successfully formed in ACM-PCMS-MS resist as well as ACM-MS resist. No significant difference between ACM-PCMS-MS resist and ACM-MS resist is observed in L/S pattern shapes. The exposure doses required for pattern fabrication are larger in all L/S patterns compared to ACM-MS resist, reflecting sensitivity curves of them. The dry etching resistance of ACM-PCMS-MS resist is also presented.

リンク情報
DOI
https://doi.org/10.1117/12.2324709
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000452662700021&DestApp=WOS_CPL
ID情報
  • DOI : 10.1117/12.2324709
  • ISSN : 0277-786X
  • eISSN : 1996-756X
  • Web of Science ID : WOS:000452662700021

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