FUJISHIRO Hiroki

J-GLOBAL         Last updated: Mar 29, 2019 at 03:10
 
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Name
FUJISHIRO Hiroki
E-mail
fujisirote.noda.tus.ac.jp
Affiliation
Tokyo University of Science
Section
Tokyo University of Science
Job title
Professor
Degree
Doctor of Philosophy(Tokyo University of Science), Master of Science(Tokyo University of Science)

Research Areas

 
 

Academic & Professional Experience

 
1984
 - 
1995
Researcher, Oki Semiconductor Technology Laboratory
 
1995
 - 
2001
Senior Researcher, Group Leader, Oki Semiconductor Technology Laboratory
 
2001
 - 
2008
Associate Professor, Department of Applied Electronics, Tokyo University of Science
 
2006
 - 
2007
Visiting Scientist, Massachusetts Institute of Technology
 
2008
   
 
Professor, Department of Applied Electronics, Tokyo University of Science
 

Education

 
 
 - 
1982
Department of Physics, Faculty of Science and Engineering, Tokyo University of Science
 
 
 - 
1984
Physics, Graduate School, Division of Science and Engineering, Tokyo University of Science
 

Committee Memberships

 
Feb 2018
 - 
Aug 2018
2018 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2017)  Program committee member 
 
Feb 2017
 - 
Aug 2017
2017 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2017)  Program committee member 
 
Nov 2016
 - 
Sep 2017
12th Topical Workshop on Heterostructure Microelectronics (TWHM2017)  technical program committee member
 
Feb 2015
 - 
Aug 2016
2015 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2014)  Program committee member 
 
Jan 2015
 - 
Jul 2015
IEEE Metro Area Workshop in Tokyo, 2015  Organizing Committee, Treasurer
 

Published Papers

 
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering
T. Suzuki, Y. Fujisawa, S. Kawamura, K. Kumasaka, R. Machida, and H. I. Fujishiro
Proc. Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))      May 2018   [Refereed]
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer
K. Osawa, M. Hiraoka, T. Kishi, Y. Endoh, J. Takeuchi, R. Machida and H. I. Fujishiro
Proc. Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))      May 2018   [Refereed]
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Wen Hsin Chang, Tetsuji Yasuda, and Tatsuro Maeda
AIP Advances   7 105117   Oct 2017   [Refereed]
InSb-based HEMTs fabricated by using two-step-recessed gate procedure
N. Oka, K. Isono, Y. Harada, J. Takeuchi, T. Iwaki, Y. Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, R. Machida, A. Kasamatsu and H. I. Fujishiro
Abstracts of 12th Topical Workshop on Heterostructure Microelectronics (TWHM2017)   83-84   Aug 2017   [Refereed]
Electron Transport Properties of InSb/Ga0.35In0.65Sb Composite Channel Structure
S. Fujikawa, T. Iwaki, Y. Harada, J.Takeuchi, Y.Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, and A. Kasamatsu, H. I. Fujishiro
Proc. Compound Semiconductor Week 2017 (CSW2017) (14th International Symposium on Compound Simiconductor (ISCS2017) & 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017))      May 2017   [Refereed]

Misc

 
高密度GaSbドットを用いたSi(100)基板上のGaSb薄膜成長
町田 龍人,戸田 隆介,藤川 紗千恵,原 紳介,渡邊 一世, 赤羽 浩一,笠松 章史,藤代 博記
第63回応用物理学会春季学術講演会予稿集      Mar 2016
Selective Growth of InSb on Localized Area of Si(100) by Molecular Beam Epitaxy
Tomoaki Iida, Yuichi Nishino, Akinori Uchida, Hiroyuki Horii, Shinsuke Hara, Hiroki I. Fujishiro
Abstract of 16th International Conference on Molecular Beam Epitaxy   46   Aug 2010

Conference Activities & Talks

 
Comprehensive Study on GaxIn1-xSb High Electron Mobility Transistors Considering Interface Roughness Scattering
T. Suzuki, Y. Fujisawa, S. Kawamura, K. Kumasaka, R. Machida, and H. I. Fujishiro
Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))   29 May 2018   
Electron Transport Properties of Novel Ga1-xInxSb Quantum Well Structures with Strained Al0.4In0.6Sb/Al0.3In0.7Sb Stepped Buffer
K. Osawa, M. Hiraoka, T. Kishi, Y. Endoh, J. Takeuchi, R. Machida and H. I. Fujishiro
Compound Semiconductor Week 2018 (CSW2018) (15th International Symposium on Compound Simiconductor (ISCS2018) & 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018))   29 May 2018   
InSb-based HEMTs fabricated by using two-step-recessed gate procedure
N. Oka, K. Isono, Y. Harada, J. Takeuchi, T. Iwaki, Y. Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, R. Machida, A. Kasamatsu and H. I. Fujishiro
12th Topical Workshop on Heterostructure Microelectronics (TWHM2017)   28 Aug 2017   
Electron Transport Properties of InSb/Ga0.35In0.65Sb Composite Channel Structure
S. Fujikawa, T. Iwaki, Y. Harada, J.Takeuchi, Y.Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, and A. Kasamatsu, H. I. Fujishiro
Compound Semiconductor Week 2017 (CSW2017) (14th International Symposium on Compound Simiconductor (ISCS2017) & 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017))   14 May 2017   
Fabrication of GaSb/AlGaSb Multi Quantum Wells Structure Grown on Si(100) Substrate Using Heteroepitaxial GaSb Thin-film and Dots Nucleation Layers
R. Machida, K. Akahane, I. Watanabe, S. Hara, S. Fujikawa, A. Kasamatsu, and H.I. Fujishiro
Compound Semiconductor Week 2017 (CSW2017) (14th International Symposium on Compound Simiconductor (ISCS2017) & 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017))   14 May 2017   

Association Memberships

 
International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2010)(1) , 10th Topical Workshop on Heterostructure Microelectronics (TWHM2013)(1) , 11th Topical Workshop on Heterostructure Microelectronics (TWHM2015)(1) , 12th Topical Workshop on Heterostructure Microelectronics (TWHM2017)(1) , 19th International Conference on Indium Phosphide and Related Materials (IPRM2007)(1) , 2006 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2006)(1) , 2008 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2008)(1) , 2009 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2009)(1) , 2010 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2010)(1) , 2011 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2011)(1) , 2012 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2012)(1) , 2013 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2013)(1) , 2014 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2014)(1) , 2015 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2014)(1) , 2017 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2017)(1) , 2018 Asia-Pasific Workshop on Fundamental and Application of Advanced Semiconducter Devices(AWAD2017)(1) , 7th Topical Workshop on Heterostructure Microelectronics (TWHM2007)(1) , 8th Topical Workshop on Heterostructure Microelectronics (TWHM2009)(1) , 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)(1) , IEEE Metro Area Workshop in Tokyo, 2015(1)

Research Grants & Projects

 
Development of advanced high-speed devices using narrow-gap compound semiconductors
Cooperative Research
Project Year: 2007 - 2009
Development of advanced high-speed devices for optical and millimeter-wave communication systems and also as a future logic device to enter the CMOS roadmap beyond Si.
Development of nano-device simulator
Ordinary Research
Project Year: 2007 - 2009
Development of nano-device simulator using quantum corrected Monte Carlo method
Fabrication and characterization of nano-structures on semiconductor surfaces
Cooperative Research
Project Year: 2007 - 2009
STM study of Ga-Adsorbed Si surface