SUGAWARA Hiroharu

J-GLOBAL         Last updated: Aug 30, 2018 at 13:25
 
Avatar
Name
SUGAWARA Hiroharu
Affiliation
Tokyo Metropolitan University
Degree
(BLANK)(The University of Tokyo)

Research Areas

 
 

Academic & Professional Experience

 
Apr 2005
 - 
Today
首都大学東京
 
2001
 - 
2004
Associate Proffessor, Department of Electronic
 
1998
 - 
2000
Research associate, Department of Electronic
 
1994
 - 
1998
Research associate, Department of Applied
 
1994
   
 
Research associate, Quantum Transition
 

Education

 
 
 - 
1994
Graduate School, Division of Engineering, The University of Tokyo
 

Published Papers

 
Imai Yoji, Sugawara Hiroharu, Mori Yoshihisa, Nakamura Shigeyuki, Yamamoto Atsushi, Takarabe Ken-ichi
JAPANESE JOURNAL OF APPLIED PHYSICS   56(5)    May 2017   [Refereed]
Tanoue Fumihiko, Sugawara Hiroharu, Akahane Kouichi, Yamamoto Naokatsu
OPTICS LETTERS   38(13) 2333-2335   Jul 2013   [Refereed]
Tanoue Fumihiko, Sugawara Hiroharu, Akahane Kouichi, Yamamoto Naokatsu
JAPANESE JOURNAL OF APPLIED PHYSICS   52(4)    Apr 2013   [Refereed]
Sugawara Hiroharu, Izutsu Asuka, Igarashi Takashi, Kubo Genki
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 12   10(12) 1793-1795   2013   [Refereed]
Tanoue Fumihiko, Sugawara Hiroharu, Akahane Kouichi, Yamamoto Naokatsu
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   10(11) 1461-1464   2013   [Refereed]

Misc

 
Hiroharu Sugawara, Shingo Nakamura, Masayuki Oouchi, Yui Kumura, Takenobu Shishido, Takatoshi Igarashi, Masato Kishi, Masahiro Tsuchiya
Elecfronics Express(IEICE)   1(9) 253-257   2004
Journal of Polymer Science   36(17) 3139-3146   1998
STM/STS and Terminating Surface on HTSC(共著)
High Temperature Superconductivity, Ten Years After Discovery, Narosa Publishing House   173-178   1998
Electronic Phase Transition in Layered Materials 1T-TaSxSe2-x Probed by Cryogenic STM/STS(共著)
ACTA Physica Polonica A   93(2) 297-305   1998
Applied Surface Science   119(1-2) 67-75   1997

Conference Activities & Talks

 
"Quasi-Particle First Principle Calculation of Energy Bands and Carrier Densities in Distorted Mg2Si"
SUGAWARA Hiroharu
, International Conference on Thermoelectrics (ICT 2017)   Aug 2017   
"Evaluation of a Bandgap of Cubic Mg2Si by First Principle Calculation with PMT-QSGW",
SUGAWARA Hiroharu
, Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology (APAC-SILICIDE201   Jul 2016   
"Energetic Consideration of Compounds Formed at Mg2Si/Ni Electrode Boundary Layer"
SUGAWARA Hiroharu
Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology (APAC-SILICIDE2016)   Jul 2016   
"Theoretical investigation of electronic structures of Mg2Si lightly doped by p-type impurity atoms",
SUGAWARA Hiroharu
International Conference on Thermoelectrics (ICT 2016)   Jul 2016   

Patents

 
MATERIALS INTERFACE CHANGING METHOD
US patent 5733458