We investigate the noise in single layer graphene devices from equilibrium to
far from equilibrium and found that the 1/f noise shows an anomalous dependence
on the source-drain bias voltage (VSD). While the Hooge relation is not the
case around the charge neutrality point, we found that it is recovered at very
low VSD region. We propose that the depinning of the electron-hole puddles is
induced at finite VSD, which may explain this anomalous noise behavior.