1995年12月
Electrical transport in corrugated multilayered structures
PHYSICAL REVIEW B
- ,
- ,
- ,
- 巻
- 52
- 号
- 22
- 開始ページ
- 16049
- 終了ページ
- 16054
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.52.16049
- 出版者・発行元
- AMERICAN PHYSICAL SOC
Recently corrugated multilayered structures of Cu/Co/Cu/NiFe have been grown on silicon substrates which have (111) faceted grooves etched on their surface. These structures can be probed by conventional means with current at an angle to the plane of layers (CAP) as well as for currents in the plane. The CAP magnetoresistance (MR) has been found to be up to 50% greater than that for currents in the plane of the layers (CIP). We have derived the relation between the resistivities for CIP, CAP, and CPP (currents perpendicular to the plane of layers), in terms of the angle between the current and planes of the layers. From the measurement of the CIP and CAP-MR's we predict the CPP-MR for these structures.
- リンク情報
- ID情報
-
- DOI : 10.1103/PhysRevB.52.16049
- ISSN : 0163-1829
- Web of Science ID : WOS:A1995TL81300057