2017年4月
Energy-efficient writing scheme for magnetic domain-wall motion memory
APPLIED PHYSICS EXPRESS
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- 巻
- 10
- 号
- 4
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/APEX.10.043002
- 出版者・発行元
- IOP PUBLISHING LTD
We present an energy-efficient magnetic domain-writing scheme for domain wall (DW) motion-based memory devices. A cross-shaped nanowire is employed to inject a domain into the nanowire through current-induced DW propagation. The energy required for injecting the magnetic domain is more than one order of magnitude lower than that for the conventional field-based writing scheme. The proposed scheme is beneficial for device miniaturization because the threshold current for DW propagation scales with the device size, which cannot be achieved in the conventional field-based technique. (C) 2017 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/APEX.10.043002
- ISSN : 1882-0778
- eISSN : 1882-0786
- Web of Science ID : WOS:000417995200001