HOSOI Takuji

J-GLOBAL         Last updated: Dec 5, 2019 at 04:39
 
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Name
HOSOI Takuji
Affiliation
Osaka University
Section
Graduate School of Engineering Division of Science and Biotechnology
Job title
Assistant Professor
Degree
-(Osaka University)
Research funding number
90452466
ORCID ID
0000-0003-3716-604X

Research Areas

 
 

Published Papers

 
Fabrication of Shape Controlled Metal Nanodot Arrays by Autonomous Liquid-phase Nanoscale Processing as well as Their Charge Injection Characteritics for Floating Nanodot Gate Memory
N. Zettsu, S. Matsuura, A. Watanabe, K. Yamamura, T. Hosoi, H. Watanabe
Extended Abstracts of Third International Symposium on Atomically Controlled Fabrication Technology, 4.4, 42-43.      Nov 2010
Analysis of Ordered Structure of Buried Oxide Layers in SIMOX Wafers
Takayoshi Shimura, Takuji Hosoi, and Masataka Umeno
   May 1999
Ordered Structure in Buried Oxide Layers of SOI Wafers
Takayoshi Shimura, Takuji Hosoi, Riho Ejiri, and Masataka Umeno
   Jun 1999
X-ray Scattering from the Crystalline SiOTex in Buried Oxide Layers of SIMOX Wafers
Takuji Hosoi, Takayoshi Shimura, and Masataka Umeno
   Aug 1999
Characterization of SOI Wafers by X-ray CTR Scattering
Takayoshi Shimura, Takuji Hosoi, and Masataka Umeno
   Mar 2000

Misc

 
X-ray Scattering from the Crystalline SiO2 in Buried Oxide Layers of SIMOX Wafers
18th International Union of Crystallography Congress      1999
Ordered Structure in Buried Oxide Layers of SOI Wafers
Japanese Journal of Applied Physics   38(Suppl.38-1) 297-300   1999
Journal of Crystal Growth   210(1/3) 98-101   2000

Research Grants & Projects

 
Study on Breakdown Mechanism of Ultrathin MOS Gate Oxide