Jun, 2002
Manganese concentration and low-temperature annealing dependence of Ga1-xMnxAs by x-ray absorption spectroscopy
PHYSICAL REVIEW B
- Volume
- 65
- Number
- 23
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1103/PhysRevB.65.233201
- Publisher
- AMERICAN PHYSICAL SOC
The Mn-site-projected electronic structure of the diluted magnetic semiconductors Ga1-xMnxAs (x=0.032, 0.038, 0.047, 0.052, 0.058) of as-grown and low-temperature (LT) annealed samples are systematically studied using high-resolution Mn 2p absorption spectroscopy. The study exhibits coexistence of the ferromagnetic Mn2+ ion and the paramagnetic Mn-As complex that transforms into the ferromagnetic component with LT annealing. The ratio of ferromagnetic to paramagnetic components is directly related to the x dependence of the hole density and ferromagnetic critical temperature.
- Link information
- ID information
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- DOI : 10.1103/PhysRevB.65.233201
- ISSN : 1098-0121
- Web of Science ID : WOS:000176767900008