2002年6月
Manganese concentration and low-temperature annealing dependence of Ga1-xMnxAs by x-ray absorption spectroscopy
PHYSICAL REVIEW B
- 巻
- 65
- 号
- 23
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.65.233201
- 出版者・発行元
- AMERICAN PHYSICAL SOC
The Mn-site-projected electronic structure of the diluted magnetic semiconductors Ga1-xMnxAs (x=0.032, 0.038, 0.047, 0.052, 0.058) of as-grown and low-temperature (LT) annealed samples are systematically studied using high-resolution Mn 2p absorption spectroscopy. The study exhibits coexistence of the ferromagnetic Mn2+ ion and the paramagnetic Mn-As complex that transforms into the ferromagnetic component with LT annealing. The ratio of ferromagnetic to paramagnetic components is directly related to the x dependence of the hole density and ferromagnetic critical temperature.
- リンク情報
- ID情報
-
- DOI : 10.1103/PhysRevB.65.233201
- ISSN : 1098-0121
- Web of Science ID : WOS:000176767900008