2002年10月15日
Unoccupied electronic structure in the surface state of lightly doped SrTiO<inf>3</inf> by resonant inverse photoemission spectroscopy
Physical Review B - Condensed Matter and Materials Physics
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- 巻
- 66
- 号
- 15
- 開始ページ
- 1531051
- 終了ページ
- 1531054
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
The unoccupied electronic structure in the surface state of lightly doped SrTiO3 has been studied by resonant inverse-photoemission spectroscopy (RIPES). The RIPES spectra show two features whose energy separations match the t2g and eg subbands of unoccupied Ti 3d state. A peak clarified by the Ti 3p → 3d resonance effect is observed at -6.1 eV above Fermi level (EF). The -6.1 eV peak is not found in the O 1 s x-ray absorption spectrum, which reflects the electronic structure of the bulk state. The existence of the -6.1 eV peak suggests the correlation effect in the surface state of lightly doped SrTiO3.
- リンク情報
- ID情報
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- ISSN : 0163-1829
- SCOPUS ID : 20744435173