小林 正和

J-GLOBALへ         更新日: 18/11/27 15:58
 
アバター
研究者氏名
小林 正和
 
コバヤシ マサカズ
eメール
cosmoswaseda.jp
URL
http://www.eb.waseda.ac.jp/kobayashi/
所属
早稲田大学
部署
理工学術院 先進理工学部
職名
教授
学位
工学博士(東京工業大学)

研究分野

 
 

経歴

 
1988年
 - 
1989年
Purdue University School of Electrical Engineering 助手
 
1989年
 - 
1990年
Purdue University School of Electrical Engineering 客員助教授
 
1990年
 - 
1991年
Purdue University School of Electrical Engineering 主幹研究員
 
1991年
 - 
2000年
千葉大学 工学部電気電子工学科 助教授
 
2000年
   
 
早稲田大学 理工学術院 教授
 

学歴

 
1979年4月
 - 
1983年3月
早稲田大学 理工学部 電気工学科
 
1983年4月
 - 
1988年3月
東京工業大学 工学系研究科 電子物理工学
 

論文

 
Aya Uruno, Yohei Sakurakawa, Masakazu Kobayashi
Journal of Electronic Materials   47 5730-5734   2018年10月
? 2018, The Minerals, Metals & Materials Society. AgGaTe2, AgAlTe2, CuGaTe2, and Ag(Ga,Al)Te2layers were deposited by the close spaced sublimation method. The surface morphology and crystal quality of these Te-based chalcopyrite layers were syst...
Aya Uruno, Masakazu Kobayashi
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017   1-6   2018年5月
? 2017 IEEE. The AgGaTe2layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3source material into the Ag2Te layer and formation of the AgGaTe2layer were both occurring du...
Aya Uruno, Masakazu Kobayashi
Physica Status Solidi (A) Applications and Materials Science      2018年1月
? 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Since its bandgap is close to optimum value, AgGaTe2is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe2thin films p...
Xianfeng Zhang, Akira Yamada, Masakazu Kobayashi
Physica Status Solidi (A) Applications and Materials Science   214    2017年10月
? 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Molecular beam epitaxy was used to fabricate Ag(In,Ga)Se2(AIGS) thin films. To improve the diffusion of Ag, high-temperature deposition and high-temperature annealing methods were applied to fabr...
Xianfeng Zhang, Masakazu Kobayashi
IEEE Journal of Photovoltaics   7 1426-1432   2017年9月
© 2011-2012 IEEE. Ag(In, Ga)Se2(AIGS) thin films were deposited by a modified three-stage method, using a molecular beam epitaxy apparatus. The influence of sodium on the properties of AIGS films was investigated, using Mo-coated soda-lime-glass (...
Yohei Sakurakawa, Aya Uruno, Masakazu Kobayashi
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   35(4)    2017年7月   [査読有り]
© 2017 American Vacuum Society. Nucleation of Cu-Te layers was performed by the closed space sublimation method using various source materials, source temperatures, and Si substrates with different surface orientations. The objective was to produc...
Wei Che Sun, Taizo Nakusu, Keisuke Odaka, Masakazu Kobayashi, Toshiaki Asahi
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   35(4)    2017年7月   [査読有り]
? 2017 American Vacuum Society. ZnTe electro-optic waveguide device has a great potential for the practical applications. The introduction of low Mg% cladding layer to the ZnMgTe/ZnTe/ZnMgTe waveguide structure was performed to circumvent the effe...
Taizo Nakasu, W. Sun, M. Kobayashi, T. Asahi
Journal of Crystal Growth   468 635-637   2017年6月   [査読有り]
? 2016 Elsevier B.V. Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of...
Xianfeng Zhang, Masakazu Kobayashi, Akira Yamada
ACS Applied Materials and Interfaces   9 16215-16220   2017年5月
? 2017 American Chemical Society. The structural and electrical properties of the junction at Ag(In,Ga)Se2AIGS/Mo, and Cu(In,Ga)Se2CIGS/Mo layers were characterized. The region between the CIGS and Mo featured a MoSe2layer with a layered hexagonal...
Xianfeng Zhang, Masakazu Kobayashi
IEEE Photonics Journal   9    2017年4月
© 2009-2012 IEEE. Ag(In, Ga)Se2(AIGS) has been considered as a promising candidate material for the top cell of chalcopyrite-based tandem solar cells. In this work, the process of (AIGS) film growth by a three-stage molecular beam epitaxy method i...
Taizo Nakasu, Wei Che Sun, Masakazu Kobayashi, Toshiaki Asahi
Journal of Electronic Materials   46(4) 2248-2253   2017年4月   [査読有り]
? 2016, The Minerals, Metals & Materials Society. ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C...
Aya Uruno, Masakazu Kobayashi
Physica Status Solidi (A) Applications and Materials Science   214(1)    2017年1月   [査読有り]
? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim AgGaTe2layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-b...
Taizo Nakasu, Wei Che Sun, Masakazu Kobayashi
Japanese Journal of Applied Physics   56    2017年1月
? 2017 The Japan Society of Applied Physics. Domain structures of ZnTe layers grown on a-plane sapphire substrates were investigated by changing the crystallographic properties of the surface and interface. Pole figure images were obtained and we ...
Influence of Sapphire’s a-Plane on the Crystal Orientation of ZnTe thin films on Sapphire Substrates
T. Nakasu, W. Sun, M. Kobayashi
Japanese Journal of Applied Physics   56 15505   2017年   [査読有り]
Shunya Taki, Yuto Umejima, Aya Uruno, Xianfeng Zhang, Masakazu Kobayashi
16th International Conference on Nanotechnology - IEEE NANO 2016   699-702   2016年11月
© 2016 IEEE. Cu2ZnSn(S,Se)4(CZTSSe) is a compound semiconductor which replaces a part of S in the CZTS crystal by Se. The bandgap varies from 1.05 eV to 1.51 eV depending on the mole ratio between S and Se. In this paper, CZTSSe thin films were pr...
Aya Uruno, Masakazu Kobayashi
Conference Record of the IEEE Photovoltaic Specialists Conference   2016-November 524-529   2016年11月
? 2016 IEEE. The AgGaTe2layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3source material into the Ag2Te layer and formation of the AgGaTe2layer were both occurring du...
Xingfeng Zhang, Masakazu Kobayashi
2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings   2306-2309   2016年11月
? 2016 IEEE. Cu2ZnSnS4(CZTS) precursor was fabricated from a CZTS nano crystal ink, which was obtained by a ball-milling method. The precursor was then annealed in the sulfur atmosphere. The growth mechanism of CZTS was studied in this work. It wa...
Taizo Nakasu, Shota Hattori, Wei Che Sun, Masakazu Kobayashi
Physica Status Solidi (B) Basic Research   253 2265-2269   2016年11月
? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-mask...
Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki, Masakazu Kobayashi, Toshiaki Asahi
Journal of Electronic Materials   45 4742-4746   2016年10月
? 2016, The Minerals, Metals & Materials Society. Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ? 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously ...
Aya Uruno, Masakazu Kobayashi
Journal of Electronic Materials   45 4692-4696   2016年9月
? 2016, The Minerals, Metals & Materials Society. AgGaTe2layers were successfully grown on Si substrates by the close-spaced sublimation method. The Si substrates were confirmed to be etched during AgGaTe2layer growth when the layer was grown di...
Wei Che Sun, Fukino Kazami, Jing Wang, Taizo Nakasu, Shota Hattori, Takeru Kizu, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi
Japanese Journal of Applied Physics   55    2016年8月
? 2016 The Japan Society of Applied Physics. A ZnMgTe/ZnTe electro-optic (EO) waveguide has great potential to be utilized for practical applications. A low-dislocation ZnMgTe/ZnTe waveguide can be fabricated when the cladding layer thickness is b...
T. Nakasu, T. Kizu, W. Sun, F. Kazami, M. Kobayashi, T. Asahi
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016      2016年8月
? 2016 IEEE. ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was stu...
Taizo Nakasu, Shota Hattori, Takeru Kizu, Wei Che Sun, Fukino Kazami, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi
Physica Status Solidi (C) Current Topics in Solid State Physics   13 435-438   2016年7月
Copyright ? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical p...
Aya Uruno, Yuji Takeda, Tomohiro Inoue, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   13 413-416   2016年7月
Copyright ? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Ag(Ga,Al)Te2layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2mixture or AgAlTe2/Ga2Te3mixture. The crystallog...
Fukino Kazami, Wei Che Sun, Kosuke Taguri, Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Masakazu Kobayashi, Toshiaki Asahi
Physica Status Solidi (B) Basic Research   253 635-639   2016年4月
? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. ZnMgTe/ZnTe waveguide is a high potential electro-optical device. Thick and high Mg composition cladding layers are required for high optical performance waveguides. However, adding Mg would inc...
Taizo Nakasu, Takeru Kizu, Sotaro Yamashita, Takayuki Aiba, Shota Hattori, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki, Masakazu Kobayashi, Toshiaki Asahi
Journal of Electronic Materials   45 2127-2132   2016年4月
? 2016, The Minerals, Metals & Materials Society. ZnTe/sapphire heterostructures were focused, and ZnTe thin films were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. A sapphire substrate possessing an atomically-sm...
Wei Che Sun, Fukino Kazami, Jing Wang, Taizo Nakasu, Shota Hattori, Takeru Kizu, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi
MRS Advances   1 1721-1727   2016年1月
? 2016 Materials Research Society. ZnMgTe(Cladding)/ZnTe(Core)/ZnMgTe(Cladding) thin film waveguide had been grown by molecular beam epitaxy (MBE) and presented a great potential to be a high performance Electro-optical (EO) modulator. For a low p...
T. Nakasu, W. Sun, M. Kobayashi, T. Asahi
Journal of Crystal Growth   (11) 35   2016年   [査読有り]
Aya Uruno, Ayaka Usui, Tomohiro Inoue, Yuji Takeda, Masakazu Kobayashi
Journal of Electronic Materials   44 3013-3017   2015年9月
? 2015, The Minerals, Metals & Materials Society. AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2layers were grown by the closed-space sublimation method on c-plane sapphire substrates. The crystallographic properties of the AgGaTe2and AgAlTe2layers were the...
T. Nakasu, T. Aiba, S. Yamashita, S. Hattori, W. Sun, K. Taguri, F. Kazami, M. Kobayashi, T. Asahi
Journal of Crystal Growth   425 191-194   2015年7月
? 2015 Elsevier B.V. All rights reserved. ZnTe epilayers were grown on transparent a-plane (11-20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowerature nucleated buffer layer was carried out, and the influence of the ...
Aya Uruno, Ayaka Usui, Yuji Takeda, Tomohiro Inoue, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   12 508-511   2015年6月
? 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. The AgGaTe2layer growth was performed by the closed space sublimation method on the Mo/glass substrate. The Ag2Te buffer layer was inserted between AgGaTe2and Mo layers, to improve the quality o...
Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Masakazu Kobayashi
Japanese Journal of Applied Physics   54    2015年1月
? 2015 The Japan Society of Applied Physics. ZnTe epilayers were grown on r-plane (11?02) and n-plane (112?3) sapphire substrates by molecular beam epitaxy. The ZnTe domain distribution in the layer and the influence of the substrates' c-plane loc...
Aya Uruno, Ayaka Usui, Masakazu Kobayashi
Journal of Electronic Materials   43 2874-2878   2014年1月
AgGaTe2and AgAlTe2layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The g...
Taizo Nakasu, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi
Journal of Electronic Materials   43 921-925   2014年1月
ZnTe epilayers have been grown on 2°-tilted m-plane 10 1 ? 0 sapphire substrates by molecular beam epitaxy. Pole figure imaging was used to study the domain distribution within the layer, and the pole figures of 111, 220, 004, and 422 ZnTe and 30 ...
A. Uruno, A. Usui, M. Kobayashi
Journal of Applied Physics   116    2014年1月
? 2014 AIP Publishing LLC. AgAlTe2layers were grown on a- and c-plane sapphire substrates using a closed space sublimation method. Grown layers were confirmed to be single phase layers of AgAlTe2by X-ray diffraction. AgAlTe2layers were grown to ha...
Aya Uruno, Ayaka Usui, Masakazu Kobayashi
Japanese Journal of Applied Physics   53    2014年1月
AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed-space sublimation method. Various samples have been prepared with various source temperatures, holding times, and temperature differentials. In this study, the variation o...
Ayaka Usui, Aya Uruno, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   11 1190-1193   2014年1月
Chalcopyrite I-III-VI2 compounds are considered as novel potential materials for solar cells. Among the variety of those compounds, CuGaTe2 and AgAlTe2 films were grown by a closed space sublimation method. Crystallinity and stoichiometry of grown...
Taizo Nakasu, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo
Japanese Journal of Applied Physics   53    2014年1月
ZnTe epilayers were grown on transparent (10?10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallogr...
W. Sun, T. Nakasu, K. Taguri, T. Aiba, S. Yamashita, M. Kobayashi, H. Togo, T. Asahi
Physica Status Solidi (C) Current Topics in Solid State Physics   11 1252-1255   2014年1月
ZnMgTe/ZnTe/ZnMgTe thin film waveguide with high crystal quality were grown by molecular beam epitaxy (MBE). The in-plane mismatch between the ZnMgTe cladding layers and ZnTe core layer was about 0.02% which was measured by X-ray reciprocal space ...
Aya Uruno, Ayaka Usui, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   11 1186-1189   2014年1月
AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe2 layers were gr...
Taizo Nakasu, Wei Che Sun, Sotaro Yamashita, Takayuki Aiba, Kosuke Taguri, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo
Physica Status Solidi (C) Current Topics in Solid State Physics   11 1182-1185   2014年1月
ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m ...
T. Nakasu, S. Yamashita, T. Aiba, S. Hattori, W. Sun, K. Taguri, F. Kazami, M. Kobayashi
Journal of Applied Physics   116    2014年1月
? 2014 AIP Publishing LLC. The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin film...
Taizo Nakasu, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi
Physica Status Solidi (C) Current Topics in Solid State Physics   10 1381-1384   2013年11月
Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epi...
Aya Uruno, Ayaka Usui, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   10 1389-1392   2013年11月
AgGaTe2layers were grown on a-plane sapphire substrates by a closed space sublimation method. Various samples were prepared with varied source temperature, holding time and temperature differential. The variation of source temperature was used pri...
Aya Uruno, Masakazu Kobayashi
Journal of Electronic Materials   42 859-862   2013年1月
AgGaTe2layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature wa...
Masakazu Kobayashi, Ayaka Yagi, Sayako Hamaguchi
Proceedings of the IEEE Conference on Nanotechnology      2012年11月
Ba2ZnS3:Mn (BZS), SrGa2S4:Eu, and BaAl2S4:Eu nanoparticles phosphor materials were prepared by a break down method, namely the ball-milling method. Several-nanometer-size stoichiometric and dispersed nanoparticles were achieved. Red color phosphor...
Taizo Nakasu, Yuki Kumagai, Kimihiro Nishimura, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi
Applied Physics Express   5    2012年9月
ZnTe epilayers were grown on transparent substrates by molecular beam epitaxy. The insertion of a low-temperature buffer layer was carried out, and the influence of the buffer layer thickness and its annealing on the crystallographic property were...
Masakazu Kobayashi, Yuki Kumagai, Toshiaki Baba, Shota Imada
Physica Status Solidi (C) Current Topics in Solid State Physics   9 1748-1751   2012年8月
The electro-optical effect of ZnTe is recently highlighted, and various device structures utilizing ZnTe are explored. ZnTe substrates are recently commercially available, and high quality homoepitaxial layers can be grown. On the other hand, the ...
Yuki Kumagai, Masakazu Kobayashi
Japanese Journal of Applied Physics   51    2012年2月
The electro-optical (EO) effect of the ZnMgTe/ZnTe waveguide structure grown on (001) ZnTe single crystal substrates using molecular beam epitaxy (MBE) was studied. The EO properties of ZnTe were investigated by optical confinement with an electri...
Masakazu Kobayashi
Materials Research Society Symposium Proceedings   1394 93-100   2011年12月
Conventional phosphor materials are doped ternary or quaternary compounds; hence it would be difficult to prepare nanoparticles of those materials by build up methods. Ba2ZnS3:Mn (BZS), SrGa2S4:Eu, and BaAl2S4:Eu nanoparticles were prepared by a b...
Y. Kumagai, S. Imada, T. Baba, M. Kobayashi
Journal of Crystal Growth   323 132-134   2011年5月
ZnMgTe/ZnTe/ZnMgTe layered structures were grown on (0 0 1) ZnTe substrates by molecular beam epitaxy. This structure was designed to apply to waveguides in various optoelectronic devices to reduce light loss. Since the lattice mismatch between Zn...
S. Imada, T. Baba, S. Sakurasawa, M. Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   7 1473-1475   2010年8月
ZnMgTe/ZnTe layered structures were grown on ZnTe substrates by molecular beam epitaxy, and the crystal structures were characterized using X-ray diffraction methods. This structure would be the waveguide for various optoelectronic devices. Theref...
Savako Hamaguchi, Savako Hamaguchi, Takuma Yamamoto, Takuma Yamamoto, Masakazu Kobayashi
IDW '09 - Proceedings of the 16th International Display Workshops   1 383-385   2009年12月
SrGa2S4:Eu has been recently widely studied. Annealing treatment in a vacuum and a H2S atmosphere is used for the improvement of the crystallinity and optical properties. H2S annealed nanoparticles showed better characterizations than vacuum annea...
Sayako Hamaguchi, Sayako Hamaguchi, Takuma Yamamoto, Takuma Yamamoto, Masakazu Kobayashi
Japanese Journal of Applied Physics   48    2009年4月
Conventional phosphor materials are doped ternary or quaternary compounds; hence it would be difficult to prepare those nanoparticles by build up methods. Ba2ZnS3:Mn, SrGa2S4:Eu, and BaAl2S4:Eu nanoparticles were prepared by a break down method, n...
S. Hamaguchi, S. Ishizaki, M. Kobayashi
Journal of the Korean Physical Society   53 3029-3032   2008年11月
ZnS:Mn2+ nanoparticles and other sulpher-based ternary compound nanoparticles were achieved using a ball-milling method. Several-nanometer-sized ZnS:Mn2+ nanoparticles were achieved by comminuting materials in a solvent. Both X-ray diffraction (XR...
A. Ichiba, M. Kobayashi
Journal of Crystal Growth   301-302 285-288   2007年4月
The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar ato...
Mechanisms in the formation of high quality Schottky contacts to n-type ZnO
M.W. Allen, C.H. Swartz, M. Henseler, R.J. Reeves, J.B. Metson, H. Von Wenckstern, M. Grundmann, S.A. Hafield, P.H. Jefferson, P.D.C. King, T.D. Veal, C. McConville, M. Kobayashi and S.M. Durbin
Mat. Res. Soc. Symp. Proc.   955E    2007年   [査読有り]
C. E. Kendrick, C. E. Kendrick, R. Tilley, R. Tilley, M. Kobayashi, R. J. Reeves, R. J. Reeves, S. M. Durbin, S. M. Durbin
Materials Research Society Symposium Proceedings   955 270-275   2006年12月
3-D branching GaN nanowires have been grown using the intermediate and Ga-rich growth regimes of plasma assisted molecular beam epitaxy. Evidence that the growth is due to an auto-catalytic VLS process is obtained through SEM images showing drople...
J. Ueno, K. Ogura, A. Ichiba, S. Katsuta, M. Kobayashi, K. Onomitsu, Y. Horikoshi
Physica Status Solidi C: Conferences   3 1225-1228   2006年5月
ZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence ...
A. Icshba, J. Ueno, K. Ogura, S. Katsuta, M. Kobayashi
Physica Status Solidi C: Conferences   3 789-792   2006年5月
In order to get around the high and activated n-doping levels for ZnTe, the co-doping technique known as effective method to overcome the dopant compensation was explored. The co-doping concept is to introduce two oppositely polar atoms at the sam...
Fabrication of ZnO Coated ZnS:Mn2+ Nanoparticles
Shinji Ishizaki, Yusuke Kusakari and Masakazu Kobayashi
Mater. Res. Soc. Symp. Proc.   829 2221-2225   2005年
Preparation of SrS:Ce/ZnO core-shell nanoparticles using reverse micelle method
Yusuke Kusakari, Shinji Ishizaki, and Masakazu Kobayashi
Mater. Res. Soc. Symp. Proc.   829 1021-1025   2005年
. Ueno, M. Enami, S. Katsuta, A. Ichiba, and K. Ogura, K. Onomitsu, and Y. Horikoshi . Ueno, M. Enami, S. Katsuta, A. Ichiba, and K. Ogura, K. Onomitsu, and Y. Horikoshi
J. Cryst. Growth   278 273-277   2005年
II-VI compound nano-particles prepared by a ball milling method
M.Kobayashi, S. Ishizaki, and M. Uenishi
Proc. International conference on nanomaterials NANO2005   1 95-98   2005年
MBE growth of ZnMgCdS compounds on (001) GaAs for UV-A sensors
M. ENAMI, K. TSUTSUMI, F. HIROSE, S. KATSUTA and M. KOBAYASHI
physica status solidi (c)   1(4) 1038-1041   2004年3月
Yasuhiro Ueda, Masakazu Kobayashi
Applied Optics   43(20) 3993-3998   2004年
鮫島冴映子,小林正和
電気学会論文誌C   124-C 1738-1743   2004年
鮫島 冴映子, 小林 正和, 渋谷 潔, 星野 英久, 千代 雅子, 藤沢 武彦
日本レーザー医学会誌 = The Journal of Japan Society for Laser Medicine   24(3)    2003年9月
Masakazu Kobayashi, Rina Sawada, and Yasuhiro Ueda
IEEE Journal of Selected Topics in Quantum Electronics   9(2) 142-147   2003年
K. Tsutsumi, H. Terakado, M. Enami, and M. Kobayashi
J. Vac. Sci. Technol. B   21, 1959-1962    2003年
Masaaki ENAMI, Kazuaki TSUTSUMI, Fumiaki HIROSE, Shohei KATSUTA, and Masakazu KOBAYASHI
Jpn. J. Appl. Phys   Vol.42 No.9AB pp.L1047 - L1049    2003年
M. Kobayashi, H. Terakado, R. Sawada, A. Arakawa, AND K. Sato
Phys.Stat.Solidi (b)   229, 265-268    2002年
Masakazu Kobayashi, Kiyoshi Shibuya, Hidehisa Hoshino, and Takehiko Fujisawa
Journal of Biomedical Optics   Volume 7, Issue 4 603-608    2002年
小林正和、渋谷潔、星野英久、藤澤武彦
気管支学   Vol.24,No.5, 384−390    2002年
Autofluorescence Spectroscopy Analysis of the Human Bronchus using a UV Laser Diode
M. Kobayashi, K. Shibuya, H. Hoshino, and T. Fujisawa
Proc. of 14TH WORLD CONGRESS OF THE INTERNATIONAL SOCIETY FOR LASER SURGERY AND MEDICINE   p125-129    2001年
小林 正和, 渋谷 潔, 星野 英久, 藤澤 武彦
気管支学   23(3)    2001年
Hailong Zhou, A. V. Nurmikko, S. Nakamura, K. Kitamura, H. Umeya, A. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato
Journal of Applied Physics   88 4725-4728   2000年10月
Self-assembled nanocrystalline dots of CdS grown within a ZnSe host have been studied by steady state and transient optical spectroscopies. This material system features an unusually low density of the dots, into which the excitation transfer of e...
T. Kazama, F. Yasunaga, Y. Taniyasu, A. Jia, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi
Physica Status Solidi (A) Applied Research   180 345-350   2000年7月
Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated...
Y. Taniyasu, K. Suzuki, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi
Physica Status Solidi (A) Applied Research   180 241-246   2000年7月
Cubic (zinc-blende) InGaN/GaN double-heterostructure LEDs were fabricated on GaAs (001) substrates. The device performance and crystal quality were investigated. The emission wavelength was controlled by the In content in the cubic InGaN active la...
K. Kitamura, H. Umeya, A. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi
Journal of Crystal Growth   214 680-683   2000年6月
Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-xwas increased. This shift is related to th...
M. Kobayashi, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi, K. Takahashi
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   18 1684-1687   2000年5月
CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift w...
安田 隆, 小林 正和
應用物理   69(4)    2000年4月
J. S. Pelt, R. Magaña, M. E. Ramsey, E. Poindexter, S. Atwell, J. P. Zheng, S. M. Durbin, M. Kobayashi
Materials Research Society Symposium - Proceedings   616 75-80   2000年1月
There is a great deal of interest in thin film deposition techniques which can achieve good crystal quality at low substrate temperatures. Pulsed laser deposition (PLD), well-known as a reliable technique for fabrication of high critical temperatu...
A. Jia, T. Furushima, M. Kobayashi, Y. Kato, M. Shimotomai, A. Yoshikawa, K. Takahashi
Journal of Crystal Growth   214 1085-1090   2000年1月
A new candidate for long lifetime short-wavelength light emitters made of hexagonal II-VI compounds has been proposed. In this paper, the results of theoretical design of ZnMgCdOSSe-based light emitters fabricated on (111) plane of GaAs and InP su...
H Umeya K Kitamura A Jia M Shimotomai Y Kato M Kobayashi A Yoshikawa K Takahashi
J. Cryst. Growth   214/215/,192-196    2000年
M. Kobayashi
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   17 2005-2008   1999年12月
The luminescence properties of self-assembled CdS quantum dots (QDs) were studied. CdS QD structures formed on ZnSe buffer layers without capping layers showed intense photoluminescence (PL). The PL peak position could be controlled by changing th...
M. ENAMI, K. TSUTSUMI, F. HIROSE, S. KATSUTA and M. KOBAYASHI
Physica Status Solidi   Vol176 p397    1999年11月
Hailong Zhou, A. V. Nurmikko, M. Kobayashi, A. Yoshikawa
IQEC, International Quantum Electronics Conference Proceedings   15-16   1999年1月
Quantum dots are spectroscopically investigated based on CdS and ZnSe heteroepitaxy by molecular beam methods. The lattice mismatch between CdSe and ZnSe is about 3%, a relative modest value. Another unusual characteristic is that MBE grown CdS la...
Zhixin Qin, Masakazu Kobayashi, Akihiko Yoshikavva
Journal of Materials Science: Materials in Electronics   10 199-202   1999年1月
X-ray diffraction reciprocal space maps and pole figures were used to analyze the cubic GaN epitaxial layers grown on (0 0 1) GaAs by r.f. plasma source MBE; the presence of hexagonal phase in cubic GaN layers was detected by high resolution x-ray...
H. Hayashi, A. Hayashida, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato, A. Yoshikawa, K. Takahashi
Physica Status Solidi (B) Basic Research   216 241-245   1999年1月
We found that the direction of the [001] axis of the c-GaN epilayer grown on (001) GaAs was slightly tilted towards the direction of the N-beam during the epitaxial growth by rf-MBE, where the N-beam was incident obliquely to the surface normal. W...
M Kobayashi K Wakao S Nakamura A Jia A Yoshikawa M Shimotomai Y Kato K Takahashi
J. Cryst. Growth   201/202/,474-476    1999年
A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. Jia, M. Kobayashi, Y. Kato, K. Takahashi
Materials Science Forum   264-268 1221-1224   1998年12月
Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. ...
泰 志新, 賈 岸偉, 小林 正和, 吉川 明彦
真空   41(11) 950-954   1998年11月
A two-step atomic-hydrogen (atomic-H) treatment of GaAs substrate was investigated; this includes low-temperature cleaning and high-temperature smoothening of GaAs (001) substrate surface. It was found that atomically flat GaAs surface with one mo...
Zhixin Qin, Anwei Jia, Masakazu Kobayashi, Akihiko Yoshikawa
Shinku/Journal of the Vacuum Society of Japan   41 950-954   1998年11月
A two-step atomic-hydrogen (atomic-H) treatment of GaAs substrate was investigated; this includes low-temperature cleaning and high-temperature smoothening of GaAs(001) substrate surface. It was found that atomically flat GaAs surface with one mon...
Wakao K, Nakamura S, Jia AW, Kobayashi M, Yoshikawa A, Shimotomai M, Kato Y, Takahashi K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   37(6B) L749-L751   1998年6月   [査読有り]
Z. X. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, Y. Kato, A. Yoshikawa, K. Takahashi
Journal of Crystal Growth   189-190 425-429   1998年6月
Cubic GaN epilayers were grown on atomic hydrogen treated (0 0 1)GaAs substrates by RF-radical source molecular beam epitaxy. The crystalline quality was characterized by a high-resolution X-ray diffractometer. It was found that high-quality c-GaN...
Yoshitaka Taniyasu, Ryouichi Ito, Norio Shimoyama, Megumi Kurihara, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi
Journal of Crystal Growth   189-190 305-309   1998年6月   [査読有り]
Initial growth stages of cubic GaN (c-GaN) films on GaAs(0 0 1) in low-pressure MOVPE were studied by spectroscopic ellipsometry. The GaN buffer layer was deposited at 500°C and was then annealed at 700°C with H2/monomethylhydrazine (MMHy) ambient...
Hajime Nagano, Zhixin Qin, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi
Journal of Crystal Growth   189-190 265-269   1998年6月
Substrate surface treatment techniques and growth conditions are the key of growing high-quality cubic GaN (c-GaN) epitaxial layers on (0 0 1) GaAs substrates. An atomically flat (0 0 1) GaAs substrate surface can be obtained by a two-step atomic ...
M. Kobayashi, S. Nakamura, K. Wakao, A. Yoshikawa, K. Takahashi
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   16 1316-1320   1998年5月
CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample grown at 220 °C, whereas rectangular QDs were observed from the sample grown at 280 °C. The difference of the dot shape ...

Misc

 
SrGa2S4:Eu nanoparticle phosphors prepared by a ball milling method
M. Kobayashi, S. Hamaguchi, and T. Yamamoto
Proceedings of the World Congress on Particle Technology 6   27 137   2010年
X-ray Diffraction Studies of ZnMgTe/ZnTe Layered Structures and ZnTe/Si Structures
M. Kobayashi, S. Imada, T. Baba, S. Sakurasawa
Proceedings of 2009 II-VI Workshop   7.6   2009年
The Effects of Post-Annealing on the Crystallinity and the Optical Properties of SrGa2S4:Eu Nanoparticles
S. Hamaguchi, R. Takeuchi, T. Yamamoto, M. Kobayashi
Proceedings of the 16th International Display Workshops   PHp - 16   2009年
Spectroscopy of self-assembled quantum dots in ZnSe
Hailong Zhou, A.V. Nurmikko, S. M. Kobayashi, A. Yoshikawa
Proceedings of International Quantum Electronics Conference   15-16   1999年
MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001)GaAs Prepared by Atomic-Hydrogen Treatment at High-Temperatures
A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, Y. Kato, and K. Takahashi
Slicon Carbide III-nitrides and Related Materials   Part2(264-268) 689-692   1998年
MBE Growth and Cubic GaN and the Influence of Nitridation to the Crystal Structure
Z. X. Qin, T. Kurusu, A. W. Jia, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   546-549   1996年
Nitrogen Doping of ZnSe by MOCVD Using Triallylamine
Y. Tanaka, S. Komatsu, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   425-428   1996年
MBE Growth and Characterization of Pseudo-Ternary and Quaternary Alloys by Superlattices Consisting of (Zn,Cd)(S, Se) Binary II-VI Compounds
A. W. Jia, C. Setiagung, T. Yamada, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   344-347   1996年
MBE Growth of Cubic and Hexagonal CdS Layer on (100)GaAs
T. Yamada, C. Setiagung, A.W. Jia, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   469-472   1996年
Study of Growth and Doping Processes of ZnSe Films by In-Situ Optical Probing
S. Komatsu, Y. Tanaka, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   437-440   1996年
In-Situ Probing of the ZnSe MOMBE Growth Process by Surface Photo-Interference Method and Spectroscopic Surface Photo-Interference Method
Y. Nakamura, T. Yamashita, M. Kobayashi, Y. Kato, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   313-316   1996年
MBE Growth of ZnTe/ZnSe Heterojunction with (Ga,Se) Interfacial Layer and Reduction of Band Discontinuity
T. Yoshida, T. Kurusu, M. Kobayashi, and A. Yoshikawa
14th Symposium Record on Alloy Semiconductor Physics and Electronics      1995年
Raman and photo-modulated reflectivity studies of ZnTe/InAs semiconductor heterostructure under hydrostatic pressure
R. J. Thomas, M.S. Boley, H. R. Chandrasekhar, M. Chandrasekhar, C. Parks, A.K. Ramdas, J. Han, M. Kobayashi, R.L. Gunshor
AIP Conference Proceedings   309   1994年
A New In-situ Optical Probing Method in Heteroepitaxy: Surface Photo-Interference (SPI) and Its Application to the Study of ZnSe MOMBE Growth Process
Akihiko YOSHIKAWA, Masakazu KOBAYASHI, and Sigeru TOKITA
Proc. 3rd Japan-Korea Joint Symposium on Advanced Science and Technology for Semiconductor Materials and Devices   50-57   1993年
Design on Structures of Lattice-matched Zn(Cd)S(Se) Superlattice
A.W. Jia, M. Kobayashi, and A. Yoshikawa
12th Symposium Record on Alloy Semiconductor Physics and Electronics   303-308   1993年
MBE Growth of p-type ZnSe Using a Mixture of N2 and He and the Application to Laser Diodes
H. Tosaka, S. Matsumoto, T. Nagatake, T. Yoshida, M. Kobayashi, and A. Yoshikawa
12th Symposium Record on Alloy Semiconductor Physics and Electronics   319-320   1993年
Widegap II-VI Blue Laser Diodes
R.L. Gunshor, M. Kobayashi, A.V. Nurmikko, and N. Otsuka
11th Record of Alloy Semiconductor Physics and Electronics Symposium   99-104   1992年
Blue and Green Laser Diodes and LEDs in ZnSe-Based Quantum Structures
A.V. Nurmikko, R.L. Gunshor, M. Kobayashi
Proc. The 1992 International Conference on Solid State Devices and Materials   342-344   1992年
Hot exciton luminescence in zinc telluride/manganese monotelluride quantum wells
N. Pelekanos, J. Ding, Q. Fu, A. V. Nurmikko, S. M. Durbin, M. Kobayashi, R. L. Gunshor
Proc. 20th Int. Conf. Phys. Semicond.   20(3) 2518-2521   1990年
Formation of heterojunction bandoffsets: isoelectronic viewpoint in zinc selenide:tellurium quantum wells
Q. Fu, J. Ding, N. Pelekanos, W. Walecki, A.V. Nurmikko, J. Han, S.M. Durbin, M. Kobayashi, R.L. Gunshor
Proc. 20th Int. Conf. Phys. Semicond.   20(2) 1353-1356   1990年
Strong electronic confinement in cadmium telluride single quantum wells; excitonic emission from red to blue
J. Ding, N. Pelekanos, Q. Fu, W. Walecki, A.V. Nurmikko, J. Han, S.M. Durbin, M. Kobayashi, R.L. Gunshor
Proc. 20th Int. Conf. Phys. Semicond.   20(2) 1198-1201   1990年
Low Interface State Densities in As-grown Epitaxial ZnSe/epitaxial GaAs Heterostructures
J. Qiu, Q. -D. Qian, M. Kobayashi, R.L. Gunshor, D.R. Menke, D. Li, N. Otsuka, and L.A. Kolodziejski
Inst. Phys. Conf. Ser.   106(4) 201-206   1988年
Low Interface State Density at the MBE Grown, Annealed ZnSe/GaAs Interface
Q.-D. Qian, J. Qiu, M.R. Melloch, J.A. Cooper, Jr., R. L. Gunshor, L. A. Kolodziejski, and M. Kobayashi
Inst. Phys. Conf. Ser.   96(2) 79-82   1988年
Akihiko YOSHIKAWA, Masakazu KOBAYASHI, Sigeru TOKITA, and Kotaro SATO
Proc. 1st International Conference on Photo-Excited Processes and Applications   9
CdS based novel light emitting device structures grown by MBE,
M.Kobayashi, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi
Proceedings of 3rd International Symposium on Blue laser and Light Emmitting Diodes   

書籍等出版物

 
発光と受光の物理と応用
小林洋志 監修
培風館   2008年3月   
Blue Laser and Light Emitting Diodes,
A. Yoshikawa, K. Kishino, M. Kobayashi,and Yasuda
オーム社   1996年   
Widegap II-VI Compounds for Opto-electronic Applications
M. Kobayashi, R.L. Gunshor, and L.A. Kolodziejski,
1992年   
半導体結晶材料総合ハンドブック
秋田健三 他
フジ・テクノシステム   1986年6月   

講演・口頭発表等

 
The Growth of CuGaTe2 Thin Film by Two-step Closed Space Sublimation
Aya Uruno Masakazu Kobayashi
21st International Conference on Ternary and Multinary Compounds   2018年9月   
Th-A-915
Pursuit of Single Domain ZnTe Layers on Sapphire Substrates [招待有り]
Masakazu Kobayashi
20th International Conference on Molecular Beam Epitaxy   2018年9月   
Tu-B1-3
Suppression of Cu2ZnSnS4 Nanoparticle Based Film’s Decomposition during the Selenization
K. Moriuchi S. Taki A. Uruno M. Kobayashi
The 18th IEEE International Conference on Nanotechnology   2018年6月   
T29
Preparation of AgGaTe2 Layers on Mo/glass Substrate by Two-step Closed Sublimation and its Application to Solar Cells
Aya Uruno Masakazu Kobayashi
7th edition of the World Conference on Photovoltaic Energy Conversion   2018年6月   
285
The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation
Aya Uruno Masakazu Kobayashi
Compound Semiconductor Week (CSW) 2018   2018年5月   
We5PP-PO9
Cu2Te中間層の濡れ性改善とCuGaTe2薄膜の作製
宇留野 彩 桜川 陽平 小林 正和 
第65回応用物理学会春季学術講演会    2018年3月   応用物理学会
20a-F210-1
AgGaTe2太陽電池作製に向けたMo/Cr電極構造の開発
吉野文也・宇留野 彩・桜川陽平・小林正和
平成30年電気学会全国大会   2018年3月   電気学会
2-092
Preparation of Cu2ZnSn(S,Se)4 Thin Films by Selenization of Cu2ZnSnS4 Layers and Suppression of By-products Formation
Shunya Taki Kota Moriuchi Aya Uruno Masakazu Kobayashi
2017 MRS FALL MEETING & EXHIBIT   2017年11月   
ES03.05.10
Characterization of AgGaTe2 layer prepared by varyng Ag/Ga ratio and analysis of phase diagram
A. Uruno Y. Sakurakawa M. Kobayashi
The 27th Photovoltaic Science and Engineering Conference   2017年11月   
2ThPo.79
The effect of wettability on the surface structure of Te-based chalcopyrite layer grown by the closed space sublimation
A. Uruno Y. Sakurakawa M. Kobayashi
The 2017 U.S. Workshop on the Physics and Chemistry of II-VI Materials   2017年10月   
3.1
Preparation and Characterization of Cu2ZnSn(S,Se)4 Thin Films using Ball Milled Cu2ZnSnS4 Nanoparticles
S. Taki K. Moriuchi A. Uruno M. Kobayashi
18th International Conference on II-VI Compound and Related Materials   2017年9月   
P2-4
Growth of High quality ZnTe epilayers on Sapphire substrates with Multi-Buffer Layer
T. Nakasu M. Kobayashi T. Asahi
18th International Conference on II-VI Compound and Related Materials   2017年9月   
P2-1
Selenazation of Cu2ZnSnS4 thin films prepared using ball milled nanoparticles
S. Taki K. Moriuchi A. Uruno M. Kobayashi
The European Materials Research Society   2017年9月   
S.P1.8
近接昇華法によるTe系カルコパイライトの作製と濡れ性の影響
宇留野彩 桜川陽平小林正和
第78回応用物理学会秋季学術講演会   2017年9月   応用物理学会
5p-A411-13
Cu2Te層を利用した2段階近接昇華法によるCuGaTe2薄膜の作製
桜川陽平 宇留野彩 小林正和
第78回応用物理学会秋季学術講演会   2017年9月   応用物理学会
5p-A411-12
Cu2ZnSnS4ナノ粒子塗布膜のSe化アニールとSn蒸気の添加効果
森内洸太 瀧駿也 宇留野彩 小林正和
第78回応用物理学会秋季学術講演会   2017年9月   応用物理学会
5p-A411-11
サファイア基板上ZnTe薄膜のエピタキシーメカニズムの解析 [招待有り]
中須大蔵 小林正和 朝日聡明
第78回応用物理学会秋季学術講演会   2017年9月   応用物理学会
5p-A411-1
Crystal Growth Mechanism of ZnTe epilayers on Sapphire Substrate
T. Nakasu M. Kobayashi T. Asahi
59th Annual Electronic Materials Conference   2017年6月   
G4
サファイア基板上ZnTe薄膜成長における基板面方位による効果
中須大蔵 小高圭佑 小林正和 朝日聡明
第64回応用物理学会春季学術講演会   2017年3月   応用物理学会
17a-513-11
AgGaTe2膜内のAg/Ga比が膜質に与える影響と状態図による解析
宇留野彩 鬼界伸一郎 末次由里 桜川陽平 小林正和
第64回応用物理学会春季学術講演会   2017年3月   応用物理学会
17a-513-6
AgGaTe2薄膜内における副生成物が光学的特性に与える影響
鬼界伸一郎、宇留野彩、笹原宏希、小林正和
平成29年電気学会全国大会   2017年3月   電気学会
2-083
Cu2ZnSnS4ナノ粒子塗布膜のSe化アニールとアニール条件の改善
瀧 駿也 森内 洸太 宇留野 彩 張 険峰 小林 正和
平成29年電気学会全国大会   2017年3月   電気学会
2-082
Nucleation of Cu2Te layer by a closed space sublimation method toward the growth of Te based Chalcopyrite
Y. Sakurakawa A. Uruno M. Kobayashi
44th Conference on the Physics and Chemistry of Surfaces and Interfaces   2017年1月   
WeA44
Defect Density Reduction in Core layer of ZnTe Electro-Optical Waveguide by Low Lattice Mismatched Interfaces
W. Sun T. Nakasu K. Odaka M. Kobayashi T. Asahi
44th Conference on the Physics and Chemistry of Surfaces and Interfaces   2017年1月   
WeM39
サファイア基板上ZnTe薄膜の分子線エピタキシー成長
中須大蔵 小林正和 朝日聡明
第5回結晶工学未来塾研究ポスター発表会   2016年11月7日   
40
High quality AgGaTe2 layers formed from Ga2Te3/Ag2Te two layer structures
A. Uruno Y. Sakurakawa M. Kobayashi
The 2016 U.S. Workshop on the Physics and Chemistry of II-VI Materials   2016年10月   
4_3
Influence of nano-facet structures on the orientation of the ZnTe film on sapphire substrate
T. Nakasu W. Sun M. Kobayashi T. Asahi
32nd North American Molecular Beam Epitaxy Conference   2016年9月   
MoP26
Influence of the sapphire substrate surface treatment on the domain structure of the ZnTe epilayer
T. Nakasu W. Sun M. Kobayashi T. Asahi
19th International Conference on Molecular Beam Epitaxy   2016年9月   
Cu2ZnSnS4ナノ粒子塗布膜の Se 化アニールと副生成物の抑制
瀧 駿也 宇留野 彩 張険峰 小林 正和
第77回応用物理学会秋季学術講演会   2016年9月   応用物理学会
15a-A34-1
近接昇華法によるGa2Te3/Ag2Te積層構造からのAgGaTe2薄膜作製
宇留野彩 桜川陽平 小林正和
第77回応用物理学会秋季学術講演会   2016年9月   応用物理学会
13p-D61-8
サファイア基板表面のナノファセット構造によるZnTe薄膜の配向制御
中須大蔵 孫惟哲 小林正和 朝日聡明
第77回応用物理学会秋季学術講演会   2016年9月   応用物理学会
13p-D61-4
Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles
S. Taki Y. Umejima A. Uruno X. Zhang M. Kobayashi
16th International Conference on Nanotechnology (IEEE NANO 2016)   2016年8月   
WePM11.5
Growth and characterization of ZnTe layers on severely lattice mismatched sapphire substrates by MBE
T. Nakasu W. Sun M. Kobayashi T. Asahi
18th International Conference on Crystal Growth and Epitaxy   2016年8月   
Fr1-T04-7
The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications
A. Uruno M. Kobayashi
The 43rd IEEE Photovoltaic Specialists Conference (PVSC43)   2016年6月   
143
Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nano-faceted Structure
T. Nakasu S. Hattori Y. Hashimoto W. Sun J. Wang M. Kobayashi T. Asahi
58th Electronic Materials Conference   2016年6月   
Z8
Growth and solar cell applications of AgGaTe2 layers by closed space sublimation using the mixed source of Ag2Te and Ga2Te3
A. Uruno S. Kikai Y. Suetsugu M. Kobayashi
43rd International Symposium on Compound Semiconductors   2016年6月   
MoP-ISCS-014
The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures
T. Nakasu T. Kizu W. Sun F. Kazami M. Kobayashi T. Asahi
43rd International Symposium on Compound Semiconductors   2016年6月   
MoP-ISCS-012
Ag2Te中間層を導入したSi基板上のAgGaTe2作製と太陽電池応用
宇留野彩 小林正和
第63回応用物理学会春季学術講演会   2016年3月   応用物理学会
22p-H116-6
Se蒸気圧制御アニールによるCu2ZnSn(S,Se)4の作製と太陽電池応用
梅嶋悠人 瀧駿也 上村一生 宇留野彩 張険峰 小林正和
第63回応用物理学会春季学術講演会   2016年3月   応用物理学会
22p-H116-5
フッ酸系エッチャントによるZnTeのメサエッチングとZnMgTe/ZnTe光導波路のリッジ化
風見蕗乃 孫惟哲 王兢 中須大蔵 服部翔太 木津健 橋本勇輝 玉川陽菜 小高圭佑 山本洋輔 小林正和 朝日聡明
第63回応用物理学会春季学術講演会   2016年3月   応用物理学会
22a-H116-3
ナノファセットを持つサファイアm面基板上ZnTe薄膜の成長過程解析
中須大蔵 服部翔太 木津健 橋本勇輝 孫惟哲 風見蕗乃 王兢 山本洋輔 玉川陽菜 小高圭佑 小林正和 朝日聡明
第63回応用物理学会春季学術講演会   2016年3月   応用物理学会
22a-H116-2
サファイア基板の化学処理がZnTe薄膜のドメイン構造形成に与える効果
中須大蔵 木津健 服部翔太 橋本勇輝 孫惟哲 風見蕗乃 王兢 小高圭佑 玉川陽菜 山本洋輔 小林正和 朝日聡明
第63回応用物理学会春季学術講演会   2016年3月   応用物理学会
22a-H116-1
低温フォトルミネッセンス法によるAgGaTe2薄膜の光学的特性評価
鬼界伸一郎 宇留野彩 末次由里
平成28年電気学会全国大会   2016年3月   電気学会
NO.2-090
フッ酸系エッチャントを用いたZnMgTe/ZnTe光導波路のリッジ加工
風見蕗乃 孫惟哲 王兢 中須大蔵 服部翔太 木津健 橋本勇輝 小林正和 朝日聡明
平成28年電気学会全国大会   2016年3月   電気学会
NO.2-092
MBE法により作製されたサファイア基板上ZnTe薄膜の結晶性評価
玉川陽菜 中須大蔵 服部翔太 木津健 橋本勇輝 小高圭佑 山本洋輔 孫惟哲 風見蕗乃 王兢 小林正和 朝日聡明
平成28年電気学会全国大会   2016年3月   電気学会
No2-091
Epitaxial lateral overgrowth Epitaxial of ZnTe on sapphire substrates using SiO2 mask
S. Hattori T. Nakasu T. Kizu Y. Hashimoto W. Sun F. Kazami M. Kobayashi T. Asahi
The 43rd Conference on the Physics and Chemistry of Surfaces and Interfaces   2016年1月   
We1445
Two-step-index ZnMgTe/ZnTe Waveguide Structures with Improved Crystal Quality
W. Sun F. Kazami J. Wang T. Nakasu S. Hattori T. Kizu Y. Hashimoto M. Kobayashi T. Asahi
2015 MRS Fall Meeting   2015年11月   
GG10.04
High quality AgGaTe2 layers on Si substrates with Ag2Te buffer layers
Aya Uruno Masakazu kobayashi
THE U.S. WORKSHOP on the physics and chemistry of II-VI materials   2015年10月   
6.5.
Electro-Optic Characteristics Improvement of ZnMgTe/ZnTe Waveguide Devices [招待有り]
W.C. Sun F. Kazami J. Wang T. Nakasu S. Hattori T. Kizu Y. Hashimoto M. Kobayashi T. Asahi
The 2015 International Conference on Solid State Devices and Materials   2015年9月   
PS-7-22
Crystallographic and Optical Characterizations of Ag(Ga,Al)Te2 Layers Grown on c-plane Sapphire Substrates by Closed Space Sublimation
Aya Uruno Yuji Takeda Tomohiro Inoue Masakazu Kobayashi
The 17th International Conference on II-VI Compounds   2015年9月   
TuC-3
ZnTe Layers on R- and S-plane Sapphire Substrates
T. Nakasu S.Yamashita T. Aiba S. Hattori T. Kizu W. Sun K. Taguri F. Kazami Y. Hashimoto S. Ozaki M. Kobayashi T. Asahi
The 17th International Conference on II-VI Compounds   2015年9月   
MoA-2
サファイアm 面基板の熱処理とZnTe 薄膜の結晶性改善
橋本 勇輝 中須 大蔵 木津 健 服部 翔太 孫 惟哲 風見 蕗乃 小林 正和 朝日 聡明
第76回応用物理学会秋季学術講演会   2015年9月   応用物理学会
13p-PB1-1
SiO2 マスクを用いたサファイア基板上ZnTeの選択成長
服部 翔太 中須 大蔵 橋本 勇輝 木津 健 孫 惟哲 風見 蕗乃 小林 正和 朝日 聡明
第76回応用物理学会秋季学術講演会   2015年9月   応用物理学会
13a-1A-1
ZnMgTe/ZnTe waveguide with two-step-index cladding layers structure
WeiChe Sun Fukino Kazami Jing Wang Taizo Nakasu Shota Hattori Takeru Kizu Yuki Hashimoto Masakazu Kobayashi Toshiaki Asahi
第76回応用物理学会秋季学術講演会   2015年9月   応用物理学会
E 13a-1A-2
Influence of the Lattice Mismatch Strain on the Surface Morphology of ZnMgTe/ZnTe Electro-Optical Waveguide Structure
Fukino Kazami Wei-che Sun Kosuke Taguri Taizo Nakasu Takayuki Aiba Sotaro Yamashita Shota Hattori Takeru Kizu Masakazu Kobayashi; Toshiaki Asahi
42nd International Symposium on Compound Semiconductors   2015年6月   
Mo4PP-O.6
Surface texture and crystallinity variation of ZnTe epilayers grown on the step-terrace structure of the sapphire substrate
57th Electronic Materials Conference   2015年6月   
PS-3
Epitaxial Relationship Analysis between ZnTe Epilayers and Sapphire Substrates
57th Electronic Materials Conference   2015年6月   
PS-2
Ba2ZnS3:Mn赤色蛍光体ナノ粒子多層膜構造の作製
古井三誉子 宇留野彩 小林正和
平成27年電気学会全国大会   2015年3月   電気学会
2-080
MBE法によるZnTeのELO
橋本勇輝・中須大蔵・服部翔太・山下聡太郎・相場貴之・木津健孫惟哲・田栗光祐・風見蕗乃・小林正和・朝日聡明 
平成27年電気学会全国大会   2015年3月   電気学会
2-103
近接昇華法によるAg(Ga,Al)Te2混晶の作製とバンドギャップの評価
薄井綾香、宇留野彩、井上朋大、竹田裕二、小林正和
平成27年電気学会全国大会   2015年3月   電気学会
2-101
ナノ粒子Cu2ZnSnS4薄膜のSe化とX線回折によるアニール条件の検討
井狩華奈美・梅嶋悠人・上村一生・張 険峰・小林正和
平成27年電気学会全国大会   2015年3月   電気学会
2-100
The electro-optic signal improvement by ZnMgTe/ZnTe waveguide structures
WeiChe Sun Kosuke Taguri Fukino Kazami
第62回応用物理学会春季学術講演会   2015年3月   応用物理学会
13p-A17-6
格子不整合がZnMgTe/ZnTe光導波路の表面形状に与える影響
風見蕗乃、孫惟哲、田栗光祐、中須大蔵、相場貴之、山下聡太朗、服部翔太、木津健、小?俊、橋本勇輝、小林正和、朝日聡明
第62回応用物理学会春季学術講演会   2015年3月   応用物理学会
13p-A17-5
S面サファイア基板上ZnTe薄膜の作製と成長方位関係の解析
中須 大蔵 山下 聡太郎 相場 貴之 木津 健 服部 翔太 孫 惟哲 田栗 光祐 風見 蕗乃 小? 峻 橋本 勇輝 小林 正和 朝日 聡明
第62回応用物理学会春季学術講演会   2015年3月   応用物理学会
13p-A17-4
オフ角を持つサファイア a面基板のステップ構造によるZnTeドメイン構造の改善
山下 聡太郎 中須 大蔵 木津 健 相場 貴之 服部 翔太 孫 惟哲 田栗 光祐 風見 蕗乃 橋本 勇輝 小? 峻 小林 正和 朝日 聡明
第62回応用物理学会春季学術講演会   2015年3月   応用物理学会
13p-A17-3
サファイア基板表面のステップ構造がZnTe薄膜成長にもたらす効果
木津 健 中須 大蔵 山下 聡太郎 相場 貴之 服部 翔太 孫 惟哲 田栗 光祐 風見 蕗乃 小? 峻 橋本 勇輝 小林 正和 朝日 聡明
第62回応用物理学会春季学術講演会   2015年3月   応用物理学会
13p-A17-2
高温ZnTeバッファ層導入によるZnTe薄膜のドメイン構造の改善
相場 貴之 中須 大蔵 山下 聡太郎 服部 翔太 木津 健 孫 惟哲 田栗 光祐 風見 蕗乃 橋本 勇輝 小? 峻 小林 正和 朝日 聡明
第62回応用物理学会春季学術講演会   2015年3月   応用物理学会
13p-A17-1
近接昇華法を用いたサファイア基板上のAg(Ga,Al)Te2混晶作製
宇留野彩、薄井綾香、竹田裕二、井上朋大、小林正和
第62回応用物理学会春季学術講演会   2015年3月   応用物理学会
13a-A17-1
Se蒸気圧制御によるCZTSナノ粒子薄膜のSe化
梅嶋 悠人 井狩 華奈美 上村 一生 張険峰 小林 正和
第62回応用物理学会春季学術講演会   2015年3月   応用物理学会
12p-A26-5
近接昇華法を用いたAgGaTe2とAgAlTe2の結晶性の評価と混晶作製
宇留野彩 薄井綾香 井上朋大 竹田裕二 小林正和
第6回 半導体材料・デバイスフォーラム   2014年12月   
ワイドギャップII-VI族化合物半導体の現状 [招待有り]
小林 正和
第6回 半導体材料・デバイスフォーラム   2014年12月   
The crystallographic characterization of AgGaTe2 and AgAlTe2 grown by closed space sublimation
Aya Uruno Ayaka Usui Masakazu Kobayashi
The 2014 II-VI Workshop   2014年10月   
[4-2]
The Growth of AgGaTe2 layers onglass substrates with Ag2Te buffer layer by closed space sublimation method
A. Uruno A. Usui M. Kobayashi
19th International Conference on Ternary and Multinary Compounds   2014年9月   
Tue-O-10B
Control of Domain Orientation during the MBE Growth of ZnTe on a-Plane Sapphire
T. Nakasu T. Aiba S. Yamashita S. Hattori W-C. Sun K. Taguri F. Kazami M. Kobayashi T. Asahi
18th International Conference on Molecular Beam Epitaxy   2014年9月   
TuC3-5
近接昇華法で作製したAgGaTe2の仕込み原料による影響
宇留野彩 薄井綾香 竹田裕二 井上朋大 小林正和
第75回応用物理学会秋季学術講演会   2014年9月   応用物理学会
17p-A12- 13
MBE 法を用いたサファイア基板上へのZnTe の横方向成長
服部翔太 中須大蔵 山下聡太郎 相場貴之 孫惟哲 田栗光祐 風見蕗乃 木津 健 小林正和 朝日聡明 武井勇樹 宇高勝之
第75回応用物理学会秋季学術講演会   2014年9月   応用物理学会
17p-A12- 5
サファイアa 面基板のオフ角がZnTe ドメイン構造へ与える影響の評価
山下聡太郎 中須大蔵 相場貴之 服部翔太 孫 惟哲 田栗光祐 風見蕗乃 木津 健 小林正和 朝日聡明
第75回応用物理学会秋季学術講演会   2014年9月   応用物理学会
17p-A12- 4
c,r,m 面サファイア基板/ZnTe 薄膜の成長方位関係の解析
中須大蔵 山下聡太郎 相場貴之 服部翔太 孫 惟哲 田栗光祐 風見蕗乃 木津 健 小林正和 朝日聡明
第75回応用物理学会秋季学術講演会   2014年9月   応用物理学会
17p-A12- 3
Fluorescence Intensity Cure of Ba2ZnS3:Mn Red Phosphor Nanoparticles toward the Silicon Solar Cell Application
MIYOKO FURUI Y. UMEJIMA M. KOBAYASHI
The 2014 International Conference on Nanoscience + Technology   2014年7月   
NO-WeM8
Effect of (0001) Surface on the Orientation of ZnTe Epilayer/Sapphire Substrate
Taizo Nakasu Takayuki Aiba Sotaro Yamashita Shota Hattori Wei-Che Sun Kosuke Taguri Fukino Kazami Masakazu Kobayashi Toshiaki Asahi
56th Electronic Materials Conference   2014年6月   
PS9
The growth of AgGaTe2 layer on Mo and effect of the Ag2Te buffer layer on the film quality
Uruno Aya Usui Aya Takeda Yuji Inoue Tomohiro Kobayashi Masakazu
41st International Symposium on Compound Semiconductors   2014年5月   
P42
AgAlTe2の近接昇華法による成長と極点図法による配向性の評価
宇留野彩 薄井綾香 井上朋大 竹田裕二 小林正和
第61回応用物理学会春季学術講演会   2014年3月   応用物理学会
18a-D2 - 9
Mo膜上のAgGaTe2の成長とAg2Teバッファ層による影響
宇留野彩 薄井綾香 竹田裕二 井上朋大 小林正和
第61回応用物理学会春季学術講演会   2014年3月   応用物理学会
18a-D2 - 8
サファイアn面基板上ZnTe薄膜成長とドメイン構造の解析
中須大蔵 山下聡太郎 相場貴之 孫 惟哲 田栗光祐 服部翔太 風見蕗乃 小林正和 都甲浩芳 朝日聡明
第61回応用物理学会春季学術講演会   2014年3月   応用物理学会
18a-D2 - 3
広域逆格子マップ測定によるc面サファイア基板上ZnTe薄膜の評価
相場貴之 中須大蔵 山下聡太郎 孫 惟哲 田栗光祐 服部翔太 風見蕗乃 小林正和 都甲浩芳 朝日聡明
第61回応用物理学会春季学術講演会   2014年3月   応用物理学会
18a-D2 - 2
サファイアa面基板上に作製したZnTe薄膜のドメイン構造の解析
山下聡太郎 中須大蔵 相場貴之 孫 惟哲 田栗光祐 服部翔太 風見蕗乃 小林正和 朝日聡明 都甲浩芳
第61回応用物理学会春季学術講演会   2014年3月   応用物理学会
18a-D2 - 1
赤色蛍光ナノ粒子Ba2ZnS3:Mnの蛍光強度回復とSi太陽電池への応用
梅嶋悠人・古井三誉子・小林正和
平成26年電気学会全国大会   2014年3月   応用物理学会
12-B2-2-101
近接昇華法によりサファイアa面上へ作製したAgAlTe2およびAgGaTe2の配向性評価
薄井綾香・宇留野 彩・井上朋大・竹田裕二・小林正和
平成26年電気学会全国大会   2014年3月   応用物理学会
12-B2-2-100
異なるMo膜上への近接昇華法によるAgAlTe2の作製
竹田裕二・宇留野 彩・薄井綾香・井上朋大・小林正和
平成26年電気学会全国大会   2014年3月   応用物理学会
12-B2-2-099
Different Orientation of AgGaTe2 and AgAlTe2 Layers Grown on a-plane Sapphire Substrates by a Closed Space Sublimation Method
A. Usui A. Uruno M. Kobayashi
41st Conference on the Physics and Chemistry of Surfaces and Interfaces   2014年1月   
Mo0930
Molecular Beam Epitaxy Growth of ZnTe/ZnMgTe Waveguide Structures and Propagation Light Intensity Change by the Applied Field
W. Sun T. Nakasu K. Taguri T. Aiba S. Yamashita M. Kobayashi H. Togo S. Asahi
The 30th North American Conference on Molecular Beam Epitaxy   2013年10月   
P20
Growth of AgGaTe2 Layers for a Novel Photovoltaic Material
Aya Uruno Ayaka Usui Masakazu Kobayashi
2013 II-VI Workshop   2013年10月   
8.6
Growth and Electro-Optical Characteri-zation of ZnMgTe/ZnTe Waveguide by Molecular Beam Epitaxy
Wei-Che Sun Taizo Nakasu Kousuke Taguri Takayuki Aiba Sotaro Yamashita Masakazu Kobayashi Hiroyoshi Togo Toshiaki Asahi
The 16th International Conference on II-VI Compounds and Related Materials   2013年9月   
Th-A3
Preparation of High Transmittance Ba2ZnS3:Mn Red Phosphor Nanoparticle Layers for Si Solar Cells
Miyoko Furui Masakazu Kobayashi
The 16th International Conference on II-VI Compounds and Related Materials   2013年9月   
We-P16
Growth of CuGaTe2 Based Compounds by a Closed Space Sublimation Method
Ayaka Usui Aya Uruno Masakazu Kobayashi
The 16th International Conference on II-VI Compounds and Related Materials   2013年9月   
We-P12
MBE Growth and Characterization of ZnTe Epilayers on m-Plane Sapphire Substrates
T. Nakasu W. Sun S. Yamashita T. Aiba K. Taguri M. Kobayashi T. Asahi H. Togo
The 16th International Conference on II-VI Compounds and Related Materials   2013年9月   
We-B2
Growth of AgGaTe2 Layers on a- and c-Plane Sapphire Substrates by a Closed Space Sublimation Method
Aya Uruno Ayaka Usui Masakazu Kobayashi
The 16th International Conference on II-VI Compounds and Related Materials   2013年9月   
Mo-B2
ZnTe/ZnMgTe導波路への電圧印加と透過光強度変化の検討
田栗光祐 孫惟哲 中須大蔵 相場貴之 山下聡太郎 小林正和 朝日聡明 都甲浩芳
第74回応用物理学会秋季学術講演会   2013年9月   応用物理学会
16a-B4-4
各種面方位のサファイア基板上ZnTe薄膜の成長と配向方位制御
中須大蔵 孫惟哲 山下聡太郎 相場貴之 田栗光祐 小林正和 都甲浩芳 朝日聡明
第74回応用物理学会秋季学術講演会   2013年9月   応用物理学会
16a-B4-3
近接昇華法により成長したAgGaTe2の極点図法による配向性の解析
宇留野彩 薄井綾香 小林正和
第74回応用物理学会秋季学術講演会   2013年9月   応用物理学会
16a-B4-2

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競争的資金等の研究課題

 
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科学研究費助成事業(早稲田大学): 科学研究費助成事業(基盤研究(B))
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