KOBAYASHI, Masakazu

J-GLOBAL         Last updated: Oct 15, 2019 at 11:25
 
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Name
KOBAYASHI, Masakazu
E-mail
cosmoswaseda.jp
URL
http://www.waseda.jp/zaiken/fol_shokai/kobayashiken/start.htm
Affiliation
Waseda University
Section
Faculty of Science and Engineering School of Advanced Science and Engineering
Job title
Professor
Degree
Doctor of Engineering(Tokyo Institute of Technology)

Research Areas

 
 

Academic & Professional Experience

 
1988
 - 
1989
Post Doctral Research Associate, School of Electrical Engineering, Purdue University
 
1989
 - 
1990
Visiting Assistant Professor, School of Electrical Engineering, Purdue University
 
1990
 - 
1991
Principal Research Scientist, School of Electrical Engineering, Purdue University
 
1991
 - 
2000
Associate Professor, Department of Electrical Engineering, Chiba Univesity
 
2000
   
 
Professor, Waseda University
 

Education

 
Apr 1979
 - 
Mar 1983
Faculty of Science and Engineering, Waseda University
 
Apr 1983
 - 
Mar 1988
Graduate School, Division of Engineering, Tokyo Institute of Technology
 

Published Papers

 
Masakazu Kobayashi
Journal of Crystal Growth   512 189-193   Apr 2019
© 2019 ZnTe layers were grown on various orientation surfaces of sapphire substrates, namely c-, a-, r-, and S-planes. Single domain dominant layers were achieved by carefully controlling the substrate orientation and introducing the thin buffer l...
Aya Uruno, Masakazu Kobayashi
Physica Status Solidi (A) Applications and Materials Science   216    Jan 2019
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim CuGaTe2 layers are successfully grown on Si (001) and Mo/quartz substrates using two-step closed space sublimation (CSS). The surface morphology of the Cu2Te first layer is affected by the surfac...
Uruno Aya, Kobayashi Masakazu
AIP ADVANCES   8(11) 5023   Nov 2018   [Refereed]
Aya Uruno, Yohei Sakurakawa, Masakazu Kobayashi
Journal of Electronic Materials   47(10) 5730-5734   Oct 2018   [Refereed]
? 2018, The Minerals, Metals & Materials Society. AgGaTe2, AgAlTe2, CuGaTe2, and Ag(Ga,Al)Te2layers were deposited by the close spaced sublimation method. The surface morphology and crystal quality of these Te-based chalcopyrite layers were syst...
Aya Uruno, Masakazu Kobayashi
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017   1-6   May 2018
? 2017 IEEE. The AgGaTe2layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3source material into the Ag2Te layer and formation of the AgGaTe2layer were both occurring du...
Aya Uruno, Masakazu Kobayashi
Physica Status Solidi (A) Applications and Materials Science   216 592   Jan 2019   [Refereed]
? 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Since its bandgap is close to optimum value, AgGaTe2is regarded as a promising material for solar cells. This paper reports the result of photoluminescence (PL) experiments on AgGaTe2thin films p...
Xianfeng Zhang, Akira Yamada, Masakazu Kobayashi
Physica Status Solidi (A) Applications and Materials Science   214    Oct 2017
? 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Molecular beam epitaxy was used to fabricate Ag(In,Ga)Se2(AIGS) thin films. To improve the diffusion of Ag, high-temperature deposition and high-temperature annealing methods were applied to fabr...
Xianfeng Zhang, Masakazu Kobayashi
IEEE Journal of Photovoltaics   7 1426-1432   Sep 2017
© 2011-2012 IEEE. Ag(In, Ga)Se2(AIGS) thin films were deposited by a modified three-stage method, using a molecular beam epitaxy apparatus. The influence of sodium on the properties of AIGS films was investigated, using Mo-coated soda-lime-glass (...
Yohei Sakurakawa, Aya Uruno, Masakazu Kobayashi
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   35(4) 106   Jul 2017   [Refereed]
© 2017 American Vacuum Society. Nucleation of Cu-Te layers was performed by the closed space sublimation method using various source materials, source temperatures, and Si substrates with different surface orientations. The objective was to produc...
Wei Che Sun, Taizo Nakusu, Keisuke Odaka, Masakazu Kobayashi, Toshiaki Asahi
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   35(4)    Jul 2017   [Refereed]
? 2017 American Vacuum Society. ZnTe electro-optic waveguide device has a great potential for the practical applications. The introduction of low Mg% cladding layer to the ZnMgTe/ZnTe/ZnMgTe waveguide structure was performed to circumvent the effe...
Taizo Nakasu, W. Sun, M. Kobayashi, T. Asahi
Journal of Crystal Growth   468 635-637   Jun 2017   [Refereed]
? 2016 Elsevier B.V. Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of...
Xianfeng Zhang, Masakazu Kobayashi, Akira Yamada
ACS Applied Materials and Interfaces   9 16215-16220   May 2017
? 2017 American Chemical Society. The structural and electrical properties of the junction at Ag(In,Ga)Se2AIGS/Mo, and Cu(In,Ga)Se2CIGS/Mo layers were characterized. The region between the CIGS and Mo featured a MoSe2layer with a layered hexagonal...
Xianfeng Zhang, Masakazu Kobayashi
IEEE Photonics Journal   9    Apr 2017
© 2009-2012 IEEE. Ag(In, Ga)Se2(AIGS) has been considered as a promising candidate material for the top cell of chalcopyrite-based tandem solar cells. In this work, the process of (AIGS) film growth by a three-stage molecular beam epitaxy method i...
Taizo Nakasu, Wei Che Sun, Masakazu Kobayashi, Toshiaki Asahi
Journal of Electronic Materials   46(4) 2248-2253   Apr 2017   [Refereed]
? 2016, The Minerals, Metals & Materials Society. ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C...
Aya Uruno, Masakazu Kobayashi
Physica Status Solidi (A) Applications and Materials Science   214(1)    Jan 2017   [Refereed]
? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim AgGaTe2layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-b...
Taizo Nakasu, Wei Che Sun, Masakazu Kobayashi
Japanese Journal of Applied Physics   56    Jan 2017
? 2017 The Japan Society of Applied Physics. Domain structures of ZnTe layers grown on a-plane sapphire substrates were investigated by changing the crystallographic properties of the surface and interface. Pole figure images were obtained and we ...
Influence of Sapphire’s a-Plane on the Crystal Orientation of ZnTe thin films on Sapphire Substrates
T. Nakasu, W. Sun, M. Kobayashi
Japanese Journal of Applied Physics   56 15505   2017   [Refereed]
Shunya Taki, Yuto Umejima, Aya Uruno, Xianfeng Zhang, Masakazu Kobayashi
16th International Conference on Nanotechnology - IEEE NANO 2016   699-702   Nov 2016
© 2016 IEEE. Cu2ZnSn(S,Se)4(CZTSSe) is a compound semiconductor which replaces a part of S in the CZTS crystal by Se. The bandgap varies from 1.05 eV to 1.51 eV depending on the mole ratio between S and Se. In this paper, CZTSSe thin films were pr...
Aya Uruno, Masakazu Kobayashi
Conference Record of the IEEE Photovoltaic Specialists Conference   2016-November 524-529   Nov 2016
? 2016 IEEE. The AgGaTe2layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3source material into the Ag2Te layer and formation of the AgGaTe2layer were both occurring du...
Xingfeng Zhang, Masakazu Kobayashi
2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings   2306-2309   Nov 2016
? 2016 IEEE. Cu2ZnSnS4(CZTS) precursor was fabricated from a CZTS nano crystal ink, which was obtained by a ball-milling method. The precursor was then annealed in the sulfur atmosphere. The growth mechanism of CZTS was studied in this work. It wa...
Taizo Nakasu, Shota Hattori, Wei Che Sun, Masakazu Kobayashi
Physica Status Solidi (B) Basic Research   253 2265-2269   Nov 2016
? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-mask...
Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki, Masakazu Kobayashi, Toshiaki Asahi
Journal of Electronic Materials   45 4742-4746   Oct 2016
? 2016, The Minerals, Metals & Materials Society. Zinc telluride (ZnTe) epilayers were grown on S-plane (10 1 ? 1) sapphire substrates by molecular beam epitaxy, and the epitaxial relationships between the two were compared with data previously ...
Aya Uruno, Masakazu Kobayashi
Journal of Electronic Materials   45 4692-4696   Sep 2016
? 2016, The Minerals, Metals & Materials Society. AgGaTe2layers were successfully grown on Si substrates by the close-spaced sublimation method. The Si substrates were confirmed to be etched during AgGaTe2layer growth when the layer was grown di...
Wei Che Sun, Fukino Kazami, Jing Wang, Taizo Nakasu, Shota Hattori, Takeru Kizu, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi
Japanese Journal of Applied Physics   55    Aug 2016
? 2016 The Japan Society of Applied Physics. A ZnMgTe/ZnTe electro-optic (EO) waveguide has great potential to be utilized for practical applications. A low-dislocation ZnMgTe/ZnTe waveguide can be fabricated when the cladding layer thickness is b...
T. Nakasu, T. Kizu, W. Sun, F. Kazami, M. Kobayashi, T. Asahi
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016      Aug 2016
? 2016 IEEE. ZnTe thin films were grown on m-plane sapphire substrates with nano-faceted structure by MBE. The growth process of the ZnTe thin film was analyzed by AFM. The influence of the nano-facet on the crystal quality of the epilayer was stu...
Taizo Nakasu, Shota Hattori, Takeru Kizu, Wei Che Sun, Fukino Kazami, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi
Physica Status Solidi (C) Current Topics in Solid State Physics   13 435-438   Jul 2016
Copyright ? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical p...
Aya Uruno, Yuji Takeda, Tomohiro Inoue, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   13 413-416   Jul 2016
Copyright ? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Ag(Ga,Al)Te2layers were grown by the closed space sublimation method on c -plane sapphire substrates. The source used was AgAlTe2/AgGaTe2mixture or AgAlTe2/Ga2Te3mixture. The crystallog...
Fukino Kazami, Wei Che Sun, Kosuke Taguri, Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Masakazu Kobayashi, Toshiaki Asahi
Physica Status Solidi (B) Basic Research   253 635-639   Apr 2016
? 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. ZnMgTe/ZnTe waveguide is a high potential electro-optical device. Thick and high Mg composition cladding layers are required for high optical performance waveguides. However, adding Mg would inc...
Taizo Nakasu, Takeru Kizu, Sotaro Yamashita, Takayuki Aiba, Shota Hattori, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Yuki Hashimoto, Shun Ozaki, Masakazu Kobayashi, Toshiaki Asahi
Journal of Electronic Materials   45 2127-2132   Apr 2016
? 2016, The Minerals, Metals & Materials Society. ZnTe/sapphire heterostructures were focused, and ZnTe thin films were prepared on highly mismatched sapphire substrates by molecular beam epitaxy. A sapphire substrate possessing an atomically-sm...
Wei Che Sun, Fukino Kazami, Jing Wang, Taizo Nakasu, Shota Hattori, Takeru Kizu, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi
MRS Advances   1 1721-1727   Jan 2016
? 2016 Materials Research Society. ZnMgTe(Cladding)/ZnTe(Core)/ZnMgTe(Cladding) thin film waveguide had been grown by molecular beam epitaxy (MBE) and presented a great potential to be a high performance Electro-optical (EO) modulator. For a low p...
T. Nakasu, W. Sun, M. Kobayashi, T. Asahi
Journal of Crystal Growth   (11) 35   2016   [Refereed]
Aya Uruno, Ayaka Usui, Tomohiro Inoue, Yuji Takeda, Masakazu Kobayashi
Journal of Electronic Materials   44 3013-3017   Sep 2015
? 2015, The Minerals, Metals & Materials Society. AgGaTe2, AgAlTe2, and Ag(Ga,Al)Te2layers were grown by the closed-space sublimation method on c-plane sapphire substrates. The crystallographic properties of the AgGaTe2and AgAlTe2layers were the...
T. Nakasu, T. Aiba, S. Yamashita, S. Hattori, W. Sun, K. Taguri, F. Kazami, M. Kobayashi, T. Asahi
Journal of Crystal Growth   425 191-194   Jul 2015
? 2015 Elsevier B.V. All rights reserved. ZnTe epilayers were grown on transparent a-plane (11-20) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowerature nucleated buffer layer was carried out, and the influence of the ...
Aya Uruno, Ayaka Usui, Yuji Takeda, Tomohiro Inoue, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   12 508-511   Jun 2015
? 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. The AgGaTe2layer growth was performed by the closed space sublimation method on the Mo/glass substrate. The Ag2Te buffer layer was inserted between AgGaTe2and Mo layers, to improve the quality o...
Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Masakazu Kobayashi
Japanese Journal of Applied Physics   54    Jan 2015
? 2015 The Japan Society of Applied Physics. ZnTe epilayers were grown on r-plane (11?02) and n-plane (112?3) sapphire substrates by molecular beam epitaxy. The ZnTe domain distribution in the layer and the influence of the substrates' c-plane loc...
Aya Uruno, Ayaka Usui, Masakazu Kobayashi
Journal of Electronic Materials   43 2874-2878   Jan 2014
AgGaTe2and AgAlTe2layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The g...
Taizo Nakasu, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi
Journal of Electronic Materials   43 921-925   Jan 2014
ZnTe epilayers have been grown on 2°-tilted m-plane 10 1 ? 0 sapphire substrates by molecular beam epitaxy. Pole figure imaging was used to study the domain distribution within the layer, and the pole figures of 111, 220, 004, and 422 ZnTe and 30 ...
A. Uruno, A. Usui, M. Kobayashi
Journal of Applied Physics   116    Jan 2014
? 2014 AIP Publishing LLC. AgAlTe2layers were grown on a- and c-plane sapphire substrates using a closed space sublimation method. Grown layers were confirmed to be single phase layers of AgAlTe2by X-ray diffraction. AgAlTe2layers were grown to ha...
Aya Uruno, Ayaka Usui, Masakazu Kobayashi
Japanese Journal of Applied Physics   53    Jan 2014
AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed-space sublimation method. Various samples have been prepared with various source temperatures, holding times, and temperature differentials. In this study, the variation o...
Ayaka Usui, Aya Uruno, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   11 1190-1193   Jan 2014
Chalcopyrite I-III-VI2 compounds are considered as novel potential materials for solar cells. Among the variety of those compounds, CuGaTe2 and AgAlTe2 films were grown by a closed space sublimation method. Crystallinity and stoichiometry of grown...
Taizo Nakasu, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo
Japanese Journal of Applied Physics   53    Jan 2014
ZnTe epilayers were grown on transparent (10?10) oriented (m-plane) sapphire substrates by molecular beam epitaxy (MBE). The insertion of a lowtemperature buffer layer was carried out, and the influence of the buffer layer annealing on crystallogr...
W. Sun, T. Nakasu, K. Taguri, T. Aiba, S. Yamashita, M. Kobayashi, H. Togo, T. Asahi
Physica Status Solidi (C) Current Topics in Solid State Physics   11 1252-1255   Jan 2014
ZnMgTe/ZnTe/ZnMgTe thin film waveguide with high crystal quality were grown by molecular beam epitaxy (MBE). The in-plane mismatch between the ZnMgTe cladding layers and ZnTe core layer was about 0.02% which was measured by X-ray reciprocal space ...
Aya Uruno, Ayaka Usui, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   11 1186-1189   Jan 2014
AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe2 layers were gr...
Taizo Nakasu, Wei Che Sun, Sotaro Yamashita, Takayuki Aiba, Kosuke Taguri, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo
Physica Status Solidi (C) Current Topics in Solid State Physics   11 1182-1185   Jan 2014
ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m ...
T. Nakasu, S. Yamashita, T. Aiba, S. Hattori, W. Sun, K. Taguri, F. Kazami, M. Kobayashi
Journal of Applied Physics   116    Jan 2014
? 2014 AIP Publishing LLC. The electrooptic effect in ZnTe has recently attracted research attention, and various device structures using ZnTe have been explored. For application to practical terahertz wave detector devices based on ZnTe thin film...
Taizo Nakasu, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi
Physica Status Solidi (C) Current Topics in Solid State Physics   10 1381-1384   Nov 2013
Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epi...
Aya Uruno, Ayaka Usui, Masakazu Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   10 1389-1392   Nov 2013
AgGaTe2layers were grown on a-plane sapphire substrates by a closed space sublimation method. Various samples were prepared with varied source temperature, holding time and temperature differential. The variation of source temperature was used pri...
Aya Uruno, Masakazu Kobayashi
Journal of Electronic Materials   42 859-862   Jan 2013
AgGaTe2layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature wa...
Masakazu Kobayashi, Ayaka Yagi, Sayako Hamaguchi
Proceedings of the IEEE Conference on Nanotechnology      Nov 2012
Ba2ZnS3:Mn (BZS), SrGa2S4:Eu, and BaAl2S4:Eu nanoparticles phosphor materials were prepared by a break down method, namely the ball-milling method. Several-nanometer-size stoichiometric and dispersed nanoparticles were achieved. Red color phosphor...
Taizo Nakasu, Yuki Kumagai, Kimihiro Nishimura, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi
Applied Physics Express   5    Sep 2012
ZnTe epilayers were grown on transparent substrates by molecular beam epitaxy. The insertion of a low-temperature buffer layer was carried out, and the influence of the buffer layer thickness and its annealing on the crystallographic property were...
Masakazu Kobayashi, Yuki Kumagai, Toshiaki Baba, Shota Imada
Physica Status Solidi (C) Current Topics in Solid State Physics   9 1748-1751   Aug 2012
The electro-optical effect of ZnTe is recently highlighted, and various device structures utilizing ZnTe are explored. ZnTe substrates are recently commercially available, and high quality homoepitaxial layers can be grown. On the other hand, the ...
Yuki Kumagai, Masakazu Kobayashi
Japanese Journal of Applied Physics   51    Feb 2012
The electro-optical (EO) effect of the ZnMgTe/ZnTe waveguide structure grown on (001) ZnTe single crystal substrates using molecular beam epitaxy (MBE) was studied. The EO properties of ZnTe were investigated by optical confinement with an electri...
Masakazu Kobayashi
Materials Research Society Symposium Proceedings   1394 93-100   Dec 2011
Conventional phosphor materials are doped ternary or quaternary compounds; hence it would be difficult to prepare nanoparticles of those materials by build up methods. Ba2ZnS3:Mn (BZS), SrGa2S4:Eu, and BaAl2S4:Eu nanoparticles were prepared by a b...
Y. Kumagai, S. Imada, T. Baba, M. Kobayashi
Journal of Crystal Growth   323 132-134   May 2011
ZnMgTe/ZnTe/ZnMgTe layered structures were grown on (0 0 1) ZnTe substrates by molecular beam epitaxy. This structure was designed to apply to waveguides in various optoelectronic devices to reduce light loss. Since the lattice mismatch between Zn...
S. Imada, T. Baba, S. Sakurasawa, M. Kobayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   7 1473-1475   Aug 2010
ZnMgTe/ZnTe layered structures were grown on ZnTe substrates by molecular beam epitaxy, and the crystal structures were characterized using X-ray diffraction methods. This structure would be the waveguide for various optoelectronic devices. Theref...
Savako Hamaguchi, Savako Hamaguchi, Takuma Yamamoto, Takuma Yamamoto, Masakazu Kobayashi
IDW '09 - Proceedings of the 16th International Display Workshops   1 383-385   Dec 2009
SrGa2S4:Eu has been recently widely studied. Annealing treatment in a vacuum and a H2S atmosphere is used for the improvement of the crystallinity and optical properties. H2S annealed nanoparticles showed better characterizations than vacuum annea...
Sayako Hamaguchi, Sayako Hamaguchi, Takuma Yamamoto, Takuma Yamamoto, Masakazu Kobayashi
Japanese Journal of Applied Physics   48    Apr 2009
Conventional phosphor materials are doped ternary or quaternary compounds; hence it would be difficult to prepare those nanoparticles by build up methods. Ba2ZnS3:Mn, SrGa2S4:Eu, and BaAl2S4:Eu nanoparticles were prepared by a break down method, n...
S. Hamaguchi, S. Ishizaki, M. Kobayashi
Journal of the Korean Physical Society   53 3029-3032   Nov 2008
ZnS:Mn2+ nanoparticles and other sulpher-based ternary compound nanoparticles were achieved using a ball-milling method. Several-nanometer-sized ZnS:Mn2+ nanoparticles were achieved by comminuting materials in a solvent. Both X-ray diffraction (XR...
A. Ichiba, M. Kobayashi
Journal of Crystal Growth   301-302 285-288   Apr 2007
The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar ato...
Mechanisms in the formation of high quality Schottky contacts to n-type ZnO
M.W. Allen, C.H. Swartz, M. Henseler, R.J. Reeves, J.B. Metson, H. Von Wenckstern, M. Grundmann, S.A. Hafield, P.H. Jefferson, P.D.C. King, T.D. Veal, C. McConville, M. Kobayashi and S.M. Durbin
Mat. Res. Soc. Symp. Proc.   955E    2007   [Refereed]
C. E. Kendrick, C. E. Kendrick, R. Tilley, R. Tilley, M. Kobayashi, R. J. Reeves, R. J. Reeves, S. M. Durbin, S. M. Durbin
Materials Research Society Symposium Proceedings   955 270-275   Dec 2006
3-D branching GaN nanowires have been grown using the intermediate and Ga-rich growth regimes of plasma assisted molecular beam epitaxy. Evidence that the growth is due to an auto-catalytic VLS process is obtained through SEM images showing drople...
J. Ueno, K. Ogura, A. Ichiba, S. Katsuta, M. Kobayashi, K. Onomitsu, Y. Horikoshi
Physica Status Solidi C: Conferences   3 1225-1228   May 2006
ZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence ...
A. Icshba, J. Ueno, K. Ogura, S. Katsuta, M. Kobayashi
Physica Status Solidi C: Conferences   3 789-792   May 2006
In order to get around the high and activated n-doping levels for ZnTe, the co-doping technique known as effective method to overcome the dopant compensation was explored. The co-doping concept is to introduce two oppositely polar atoms at the sam...
Fabrication of ZnO Coated ZnS:Mn2+ Nanoparticles
Shinji Ishizaki, Yusuke Kusakari and Masakazu Kobayashi
Mater. Res. Soc. Symp. Proc.   829 2221-2225   2005
Preparation of SrS:Ce/ZnO core-shell nanoparticles using reverse micelle method
Yusuke Kusakari, Shinji Ishizaki, and Masakazu Kobayashi
Mater. Res. Soc. Symp. Proc.   829 1021-1025   2005
. Ueno, M. Enami, S. Katsuta, A. Ichiba, and K. Ogura, K. Onomitsu, and Y. Horikoshi . Ueno, M. Enami, S. Katsuta, A. Ichiba, and K. Ogura, K. Onomitsu, and Y. Horikoshi
J. Cryst. Growth   278 273-277   2005
II-VI compound nano-particles prepared by a ball milling method
M.Kobayashi, S. Ishizaki, and M. Uenishi
Proc. International conference on nanomaterials NANO2005   1 95-98   2005
MBE growth of ZnMgCdS compounds on (001) GaAs for UV-A sensors
M. ENAMI, K. TSUTSUMI, F. HIROSE, S. KATSUTA and M. KOBAYASHI
physica status solidi (c)   1(4) 1038-1041   Mar 2004
Yasuhiro Ueda, Masakazu Kobayashi
Applied Optics   43(20) 3993-3998   2004
鮫島冴映子,小林正和
電気学会論文誌C   124-C 1738-1743   2004
SAMEJIMA S., KOBAYASHI M., SHIBUYA K., HOSHINO H., CHIYO M., FUJISAWA T.
日本レーザー医学会誌 = The Journal of Japan Society for Laser Medicine   24(3)    Sep 2003
Masakazu Kobayashi, Rina Sawada, and Yasuhiro Ueda
IEEE Journal of Selected Topics in Quantum Electronics   9(2) 142-147   2003
K. Tsutsumi, H. Terakado, M. Enami, and M. Kobayashi
J. Vac. Sci. Technol. B   21, 1959-1962    2003
Masaaki ENAMI, Kazuaki TSUTSUMI, Fumiaki HIROSE, Shohei KATSUTA, and Masakazu KOBAYASHI
Jpn. J. Appl. Phys   Vol.42 No.9AB pp.L1047 - L1049    2003
M. Kobayashi, H. Terakado, R. Sawada, A. Arakawa, AND K. Sato
Phys.Stat.Solidi (b)   229, 265-268    2002
Masakazu Kobayashi, Kiyoshi Shibuya, Hidehisa Hoshino, and Takehiko Fujisawa
Journal of Biomedical Optics   Volume 7, Issue 4 603-608    2002
小林正和、渋谷潔、星野英久、藤澤武彦
気管支学   Vol.24,No.5, 384−390    2002
Autofluorescence Spectroscopy Analysis of the Human Bronchus using a UV Laser Diode
M. Kobayashi, K. Shibuya, H. Hoshino, and T. Fujisawa
Proc. of 14TH WORLD CONGRESS OF THE INTERNATIONAL SOCIETY FOR LASER SURGERY AND MEDICINE   p125-129    2001
Hailong Zhou, A. V. Nurmikko, S. Nakamura, K. Kitamura, H. Umeya, A. Jia, M. Kobayashi, A. Yoshikawa, M. Shimotomai, Y. Kato
Journal of Applied Physics   88 4725-4728   Oct 2000
Self-assembled nanocrystalline dots of CdS grown within a ZnSe host have been studied by steady state and transient optical spectroscopies. This material system features an unusually low density of the dots, into which the excitation transfer of e...
T. Kazama, F. Yasunaga, Y. Taniyasu, A. Jia, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi
Physica Status Solidi (A) Applied Research   180 345-350   Jul 2000
Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated...
Y. Taniyasu, K. Suzuki, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi
Physica Status Solidi (A) Applied Research   180 241-246   Jul 2000
Cubic (zinc-blende) InGaN/GaN double-heterostructure LEDs were fabricated on GaAs (001) substrates. The device performance and crystal quality were investigated. The emission wavelength was controlled by the In content in the cubic InGaN active la...
K. Kitamura, H. Umeya, A. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi
Journal of Crystal Growth   214 680-683   Jun 2000
Self-assembled quantum dots (QDs) of CdS were grown on ZnSxSe1-x. Low-temperature photoluminescence (PL) properties of CdS QDs were studied and a blue shift was observed when the S composition in ZnSxSe1-xwas increased. This shift is related to th...
M. Kobayashi, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi, K. Takahashi
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   18 1684-1687   May 2000
CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift w...
J. S. Pelt, R. Magaña, M. E. Ramsey, E. Poindexter, S. Atwell, J. P. Zheng, S. M. Durbin, M. Kobayashi
Materials Research Society Symposium - Proceedings   616 75-80   Jan 2000
There is a great deal of interest in thin film deposition techniques which can achieve good crystal quality at low substrate temperatures. Pulsed laser deposition (PLD), well-known as a reliable technique for fabrication of high critical temperatu...
A. Jia, T. Furushima, M. Kobayashi, Y. Kato, M. Shimotomai, A. Yoshikawa, K. Takahashi
Journal of Crystal Growth   214 1085-1090   Jan 2000
A new candidate for long lifetime short-wavelength light emitters made of hexagonal II-VI compounds has been proposed. In this paper, the results of theoretical design of ZnMgCdOSSe-based light emitters fabricated on (111) plane of GaAs and InP su...
H Umeya K Kitamura A Jia M Shimotomai Y Kato M Kobayashi A Yoshikawa K Takahashi
J. Cryst. Growth   214/215/,192-196    2000
M. Kobayashi
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   17 2005-2008   Dec 1999
The luminescence properties of self-assembled CdS quantum dots (QDs) were studied. CdS QD structures formed on ZnSe buffer layers without capping layers showed intense photoluminescence (PL). The PL peak position could be controlled by changing th...
M. ENAMI, K. TSUTSUMI, F. HIROSE, S. KATSUTA and M. KOBAYASHI
Physica Status Solidi   Vol176 p397    Nov 1999
Hailong Zhou, A. V. Nurmikko, M. Kobayashi, A. Yoshikawa
IQEC, International Quantum Electronics Conference Proceedings   15-16   Jan 1999
Quantum dots are spectroscopically investigated based on CdS and ZnSe heteroepitaxy by molecular beam methods. The lattice mismatch between CdSe and ZnSe is about 3%, a relative modest value. Another unusual characteristic is that MBE grown CdS la...
Zhixin Qin, Masakazu Kobayashi, Akihiko Yoshikavva
Journal of Materials Science: Materials in Electronics   10 199-202   Jan 1999
X-ray diffraction reciprocal space maps and pole figures were used to analyze the cubic GaN epitaxial layers grown on (0 0 1) GaAs by r.f. plasma source MBE; the presence of hexagonal phase in cubic GaN layers was detected by high resolution x-ray...
H. Hayashi, A. Hayashida, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato, A. Yoshikawa, K. Takahashi
Physica Status Solidi (B) Basic Research   216 241-245   Jan 1999
We found that the direction of the [001] axis of the c-GaN epilayer grown on (001) GaAs was slightly tilted towards the direction of the N-beam during the epitaxial growth by rf-MBE, where the N-beam was incident obliquely to the surface normal. W...
M Kobayashi K Wakao S Nakamura A Jia A Yoshikawa M Shimotomai Y Kato K Takahashi
J. Cryst. Growth   201/202/,474-476    1999
A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. Jia, M. Kobayashi, Y. Kato, K. Takahashi
Materials Science Forum   264-268 1221-1224   Dec 1998
Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. ...
QIN Zhixin, JIA Anwei, KOBAYASHI Masakazu, YOSHIKAWA Akihiko
SHINKU   41(11) 950-954   Nov 1998
A two-step atomic-hydrogen (atomic-H) treatment of GaAs substrate was investigated; this includes low-temperature cleaning and high-temperature smoothening of GaAs (001) substrate surface. It was found that atomically flat GaAs surface with one mo...
Zhixin Qin, Anwei Jia, Masakazu Kobayashi, Akihiko Yoshikawa
Shinku/Journal of the Vacuum Society of Japan   41 950-954   Nov 1998
A two-step atomic-hydrogen (atomic-H) treatment of GaAs substrate was investigated; this includes low-temperature cleaning and high-temperature smoothening of GaAs(001) substrate surface. It was found that atomically flat GaAs surface with one mon...
Wakao K, Nakamura S, Jia AW, Kobayashi M, Yoshikawa A, Shimotomai M, Kato Y, Takahashi K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   37(6B) L749-L751   Jun 1998   [Refereed]
Z. X. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, Y. Kato, A. Yoshikawa, K. Takahashi
Journal of Crystal Growth   189-190 425-429   Jun 1998
Cubic GaN epilayers were grown on atomic hydrogen treated (0 0 1)GaAs substrates by RF-radical source molecular beam epitaxy. The crystalline quality was characterized by a high-resolution X-ray diffractometer. It was found that high-quality c-GaN...
Yoshitaka Taniyasu, Ryouichi Ito, Norio Shimoyama, Megumi Kurihara, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi
Journal of Crystal Growth   189-190 305-309   Jun 1998   [Refereed]
Initial growth stages of cubic GaN (c-GaN) films on GaAs(0 0 1) in low-pressure MOVPE were studied by spectroscopic ellipsometry. The GaN buffer layer was deposited at 500°C and was then annealed at 700°C with H2/monomethylhydrazine (MMHy) ambient...
Hajime Nagano, Zhixin Qin, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi
Journal of Crystal Growth   189-190 265-269   Jun 1998
Substrate surface treatment techniques and growth conditions are the key of growing high-quality cubic GaN (c-GaN) epitaxial layers on (0 0 1) GaAs substrates. An atomically flat (0 0 1) GaAs substrate surface can be obtained by a two-step atomic ...
M. Kobayashi, S. Nakamura, K. Wakao, A. Yoshikawa, K. Takahashi
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   16 1316-1320   May 1998
CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample grown at 220 °C, whereas rectangular QDs were observed from the sample grown at 280 °C. The difference of the dot shape ...

Misc

 
SrGa2S4:Eu nanoparticle phosphors prepared by a ball milling method
M. Kobayashi, S. Hamaguchi, and T. Yamamoto
Proceedings of the World Congress on Particle Technology 6   27 137   2010
X-ray Diffraction Studies of ZnMgTe/ZnTe Layered Structures and ZnTe/Si Structures
M. Kobayashi, S. Imada, T. Baba, S. Sakurasawa
Proceedings of 2009 II-VI Workshop   7.6   2009
The Effects of Post-Annealing on the Crystallinity and the Optical Properties of SrGa2S4:Eu Nanoparticles
S. Hamaguchi, R. Takeuchi, T. Yamamoto, M. Kobayashi
Proceedings of the 16th International Display Workshops   PHp - 16   2009
Spectroscopy of self-assembled quantum dots in ZnSe
Hailong Zhou, A.V. Nurmikko, S. M. Kobayashi, A. Yoshikawa
Proceedings of International Quantum Electronics Conference   15-16   1999
MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001)GaAs Prepared by Atomic-Hydrogen Treatment at High-Temperatures
A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, Y. Kato, and K. Takahashi
Slicon Carbide III-nitrides and Related Materials   Part2(264-268) 689-692   1998
MBE Growth and Cubic GaN and the Influence of Nitridation to the Crystal Structure
Z. X. Qin, T. Kurusu, A. W. Jia, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   546-549   1996
Nitrogen Doping of ZnSe by MOCVD Using Triallylamine
Y. Tanaka, S. Komatsu, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   425-428   1996
MBE Growth and Characterization of Pseudo-Ternary and Quaternary Alloys by Superlattices Consisting of (Zn,Cd)(S, Se) Binary II-VI Compounds
A. W. Jia, C. Setiagung, T. Yamada, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   344-347   1996
MBE Growth of Cubic and Hexagonal CdS Layer on (100)GaAs
T. Yamada, C. Setiagung, A.W. Jia, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   469-472   1996
Study of Growth and Doping Processes of ZnSe Films by In-Situ Optical Probing
S. Komatsu, Y. Tanaka, M. Kobayashi, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   437-440   1996
In-Situ Probing of the ZnSe MOMBE Growth Process by Surface Photo-Interference Method and Spectroscopic Surface Photo-Interference Method
Y. Nakamura, T. Yamashita, M. Kobayashi, Y. Kato, and A. Yoshikawa
Blue Laser and Light Emitting Diodes   313-316   1996
MBE Growth of ZnTe/ZnSe Heterojunction with (Ga,Se) Interfacial Layer and Reduction of Band Discontinuity
T. Yoshida, T. Kurusu, M. Kobayashi, and A. Yoshikawa
14th Symposium Record on Alloy Semiconductor Physics and Electronics      1995
Raman and photo-modulated reflectivity studies of ZnTe/InAs semiconductor heterostructure under hydrostatic pressure
R. J. Thomas, M.S. Boley, H. R. Chandrasekhar, M. Chandrasekhar, C. Parks, A.K. Ramdas, J. Han, M. Kobayashi, R.L. Gunshor
AIP Conference Proceedings   309   1994
A New In-situ Optical Probing Method in Heteroepitaxy: Surface Photo-Interference (SPI) and Its Application to the Study of ZnSe MOMBE Growth Process
Akihiko YOSHIKAWA, Masakazu KOBAYASHI, and Sigeru TOKITA
Proc. 3rd Japan-Korea Joint Symposium on Advanced Science and Technology for Semiconductor Materials and Devices   50-57   1993
Design on Structures of Lattice-matched Zn(Cd)S(Se) Superlattice
A.W. Jia, M. Kobayashi, and A. Yoshikawa
12th Symposium Record on Alloy Semiconductor Physics and Electronics   303-308   1993
MBE Growth of p-type ZnSe Using a Mixture of N2 and He and the Application to Laser Diodes
H. Tosaka, S. Matsumoto, T. Nagatake, T. Yoshida, M. Kobayashi, and A. Yoshikawa
12th Symposium Record on Alloy Semiconductor Physics and Electronics   319-320   1993
Widegap II-VI Blue Laser Diodes
R.L. Gunshor, M. Kobayashi, A.V. Nurmikko, and N. Otsuka
11th Record of Alloy Semiconductor Physics and Electronics Symposium   99-104   1992
Blue and Green Laser Diodes and LEDs in ZnSe-Based Quantum Structures
A.V. Nurmikko, R.L. Gunshor, M. Kobayashi
Proc. The 1992 International Conference on Solid State Devices and Materials   342-344   1992
Hot exciton luminescence in zinc telluride/manganese monotelluride quantum wells
N. Pelekanos, J. Ding, Q. Fu, A. V. Nurmikko, S. M. Durbin, M. Kobayashi, R. L. Gunshor
Proc. 20th Int. Conf. Phys. Semicond.   20(3) 2518-2521   1990
Formation of heterojunction bandoffsets: isoelectronic viewpoint in zinc selenide:tellurium quantum wells
Q. Fu, J. Ding, N. Pelekanos, W. Walecki, A.V. Nurmikko, J. Han, S.M. Durbin, M. Kobayashi, R.L. Gunshor
Proc. 20th Int. Conf. Phys. Semicond.   20(2) 1353-1356   1990
Strong electronic confinement in cadmium telluride single quantum wells; excitonic emission from red to blue
J. Ding, N. Pelekanos, Q. Fu, W. Walecki, A.V. Nurmikko, J. Han, S.M. Durbin, M. Kobayashi, R.L. Gunshor
Proc. 20th Int. Conf. Phys. Semicond.   20(2) 1198-1201   1990
Low Interface State Densities in As-grown Epitaxial ZnSe/epitaxial GaAs Heterostructures
J. Qiu, Q. -D. Qian, M. Kobayashi, R.L. Gunshor, D.R. Menke, D. Li, N. Otsuka, and L.A. Kolodziejski
Inst. Phys. Conf. Ser.   106(4) 201-206   1988
Low Interface State Density at the MBE Grown, Annealed ZnSe/GaAs Interface
Q.-D. Qian, J. Qiu, M.R. Melloch, J.A. Cooper, Jr., R. L. Gunshor, L. A. Kolodziejski, and M. Kobayashi
Inst. Phys. Conf. Ser.   96(2) 79-82   1988
Akihiko YOSHIKAWA, Masakazu KOBAYASHI, Sigeru TOKITA, and Kotaro SATO
Proc. 1st International Conference on Photo-Excited Processes and Applications   9
CdS based novel light emitting device structures grown by MBE,
M.Kobayashi, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, and K. Takahashi
Proceedings of 3rd International Symposium on Blue laser and Light Emmitting Diodes   

Books etc

 
Blue Laser and Light Emitting Diodes,
A. Yoshikawa, K. Kishino, M. Kobayashi,and Yasuda
Ohmsya   1996   
Widegap II-VI Compounds for Opto-electronic Applications
M. Kobayashi, R.L. Gunshor, and L.A. Kolodziejski,
1992   
半導体結晶材料総合ハンドブック
秋田健三 他
フジ・テクノシステム   Jun 1986   

Conference Activities & Talks

 
Preparation of AgGaTe2 Layers on Mo with Sputtered Ag2Te Buff er Layers
Aya Uruno, and Masakazu Kobayashi
61st Electronic Materials Conference   26 Jun 2019   
Orientation Shift of ZnTe Epilayers Grown on M-Plane Sapphire Substrates by Introducing Nano-Facet Structures
KOBAYASHI, Masakazu
2019 MRS Spring Meeting   22 Apr 2019   
宇留野彩, 小林正和
電気学会全国大会講演論文集(CD-ROM)   1 Mar 2019   
宇留野彩, 小林正和, 小林正和
応用物理学会春季学術講演会講演予稿集(CD-ROM)   25 Feb 2019   
The Growth of CuGaTe2 Thin Film by Two-step Closed Space Sublimation
Aya Uruno Masakazu Kobayashi
21st International Conference on Ternary and Multinary Compounds   Sep 2018   
Th-A-915
Pursuit of Single Domain ZnTe Layers on Sapphire Substrates [Invited]
Masakazu Kobayashi
20th International Conference on Molecular Beam Epitaxy   Sep 2018   
Tu-B1-3
Suppression of Cu2ZnSnS4 Nanoparticle Based Film’s Decomposition during the Selenization
K. Moriuchi S. Taki A. Uruno M. Kobayashi
The 18th IEEE International Conference on Nanotechnology   Jun 2018   
T29
Preparation of AgGaTe2 Layers on Mo/glass Substrate by Two-step Closed Sublimation and its Application to Solar Cells
Aya Uruno Masakazu Kobayashi
7th edition of the World Conference on Photovoltaic Energy Conversion   Jun 2018   
285
The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation
Aya Uruno Masakazu Kobayashi
Compound Semiconductor Week (CSW) 2018   May 2018   
We5PP-PO9
Preparation of Cu2ZnSn(S,Se)4 Thin Films by Selenization of Cu2ZnSnS4 Layers and Suppression of By-products Formation
Shunya Taki Kota Moriuchi Aya Uruno Masakazu Kobayashi
2017 MRS FALL MEETING & EXHIBIT   Nov 2017   
ES03.05.10
Characterization of AgGaTe2 layer prepared by varyng Ag/Ga ratio and analysis of phase diagram
A. Uruno Y. Sakurakawa M. Kobayashi
The 27th Photovoltaic Science and Engineering Conference   Nov 2017   
2ThPo.79
The effect of wettability on the surface structure of Te-based chalcopyrite layer grown by the closed space sublimation
A. Uruno Y. Sakurakawa M. Kobayashi
The 2017 U.S. Workshop on the Physics and Chemistry of II-VI Materials   Oct 2017   
3.1
Preparation and Characterization of Cu2ZnSn(S,Se)4 Thin Films using Ball Milled Cu2ZnSnS4 Nanoparticles
S. Taki K. Moriuchi A. Uruno M. Kobayashi
18th International Conference on II-VI Compound and Related Materials   Sep 2017   
P2-4
Growth of High quality ZnTe epilayers on Sapphire substrates with Multi-Buffer Layer
T. Nakasu M. Kobayashi T. Asahi
18th International Conference on II-VI Compound and Related Materials   Sep 2017   
P2-1
Selenazation of Cu2ZnSnS4 thin films prepared using ball milled nanoparticles
S. Taki K. Moriuchi A. Uruno M. Kobayashi
The European Materials Research Society   Sep 2017   
S.P1.8
Crystal Growth Mechanism of ZnTe epilayers on Sapphire Substrate
T. Nakasu M. Kobayashi T. Asahi
60th Annual Electronic Materials Conference   Jun 2017   
G4
Nucleation of Cu2Te layer by a closed space sublimation method toward the growth of Te based Chalcopyrite
Y. Sakurakawa A. Uruno M. Kobayashi
44th Conference on the Physics and Chemistry of Surfaces and Interfaces   Jan 2017   
WeA44
Defect Density Reduction in Core layer of ZnTe Electro-Optical Waveguide by Low Lattice Mismatched Interfaces
W. Sun T. Nakasu K. Odaka M. Kobayashi T. Asahi
44th Conference on the Physics and Chemistry of Surfaces and Interfaces   Jan 2017   
WeM39
High quality AgGaTe2 layers formed from Ga2Te3/Ag2Te two layer structures
A. Uruno Y. Sakurakawa M. Kobayashi
The 2016 U.S. Workshop on the Physics and Chemistry of II-VI Materials   Oct 2016   
4_3
Influence of nano-facet structures on the orientation of the ZnTe film on sapphire substrate
T. Nakasu W. Sun M. Kobayashi T. Asahi
32nd North American Molecular Beam Epitaxy Conference   Sep 2016   
MoP26
Influence of the sapphire substrate surface treatment on the domain structure of the ZnTe epilayer
T. Nakasu W. Sun M. Kobayashi T. Asahi
19th International Conference on Molecular Beam Epitaxy   Sep 2016   
Cu2ZnSn(S,Se)4 thin films prepared using Cu2ZnSnS4 nanoparticles
S. Taki Y. Umejima A. Uruno X. Zhang M. Kobayashi
16th International Conference on Nanotechnology (IEEE NANO 2016)   Aug 2016   
WePM11.5
Growth and characterization of ZnTe layers on severely lattice mismatched sapphire substrates by MBE
T. Nakasu W. Sun M. Kobayashi T. Asahi
18th International Conference on Crystal Growth and Epitaxy   Aug 2016   
Fr1-T04-7
The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications
A. Uruno M. Kobayashi
The 43rd IEEE Photovoltaic Specialists Conference (PVSC43)   Jun 2016   
143
Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nano-faceted Structure
T. Nakasu S. Hattori Y. Hashimoto W. Sun J. Wang M. Kobayashi T. Asahi
58th Electronic Materials Conference   Jun 2016   
Z8
Growth and solar cell applications of AgGaTe2 layers by closed space sublimation using the mixed source of Ag2Te and Ga2Te3
A. Uruno S. Kikai Y. Suetsugu M. Kobayashi
43rd International Symposium on Compound Semiconductors   Jun 2016   
MoP-ISCS-014
The growth process analysis of the ZnTe layer on the m-plane sapphire substrate with nano-facet structures
T. Nakasu T. Kizu W. Sun F. Kazami M. Kobayashi T. Asahi
43rd International Symposium on Compound Semiconductors   Jun 2016   
MoP-ISCS-012
Epitaxial lateral overgrowth Epitaxial of ZnTe on sapphire substrates using SiO2 mask
S. Hattori T. Nakasu T. Kizu Y. Hashimoto W. Sun F. Kazami M. Kobayashi T. Asahi
The 43rd Conference on the Physics and Chemistry of Surfaces and Interfaces   Jan 2016   
We1445
Two-step-index ZnMgTe/ZnTe Waveguide Structures with Improved Crystal Quality
W. Sun F. Kazami J. Wang T. Nakasu S. Hattori T. Kizu Y. Hashimoto M. Kobayashi T. Asahi
2015 MRS Fall Meeting   Nov 2015   
GG10.04
High quality AgGaTe2 layers on Si substrates with Ag2Te buffer layers
Aya Uruno Masakazu kobayashi
THE U.S. WORKSHOP on the physics and chemistry of II-VI materials   Oct 2015   
6.5.
Electro-Optic Characteristics Improvement of ZnMgTe/ZnTe Waveguide Devices [Invited]
W.C. Sun F. Kazami J. Wang T. Nakasu S. Hattori T. Kizu Y. Hashimoto M. Kobayashi T. Asahi
The 2015 International Conference on Solid State Devices and Materials   Sep 2015   
PS-7-22
Crystallographic and Optical Characterizations of Ag(Ga,Al)Te3 Layers Grown on c-plane Sapphire Substrates by Closed Space Sublimation
Aya Uruno Yuji Takeda Tomohiro Inoue Masakazu Kobayashi
The 17th International Conference on II-VI Compounds   Sep 2015   
TuC-3
ZnTe Layers on R- and S-plane Sapphire Substrates
T. Nakasu S.Yamashita T. Aiba S. Hattori T. Kizu W. Sun K. Taguri F. Kazami Y. Hashimoto S. Ozaki M. Kobayashi T. Asahi
The 17th International Conference on II-VI Compounds   Sep 2015   
MoA-2
Influence of the Lattice Mismatch Strain on the Surface Morphology of ZnMgTe/ZnTe Electro-Optical Waveguide Structure
Fukino Kazami Wei-che Sun Kosuke Taguri Taizo Nakasu Takayuki Aiba Sotaro Yamashita Shota Hattori Takeru Kizu Masakazu Kobayashi; Toshiaki Asahi
42nd International Symposium on Compound Semiconductors   Jun 2015   
Mo4PP-O.6
Surface texture and crystallinity variation of ZnTe epilayers grown on the step-terrace structure of the sapphire substrate
57th Electronic Materials Conference   Jun 2015   
PS-3
Epitaxial Relationship Analysis between ZnTe Epilayers and Sapphire Substrates
57th Electronic Materials Conference   Jun 2015   
PS-2
The electro-optic signal improvement by ZnMgTe/ZnTe waveguide structures
Taizo Nakasu Sotaro Yamashita Takayuki Aiba Takeru Kizu
第62回応用物理学会春季学術講演会   Mar 2015   応用物理学会
13p-A17-6
The crystallographic characterization of AgGaTe2 and AgAlTe2 grown by closed space sublimation
Aya Uruno Ayaka Usui Masakazu Kobayashi
The 2014 II-VI Workshop   Oct 2014   
[4-2]
The Growth of AgGaTe2 layers onglass substrates with Ag2Te buffer layer by closed space sublimation method
A. Uruno A. Usui M. Kobayashi
19th International Conference on Ternary and Multinary Compounds   Sep 2014   
Tue-O-10B
Control of Domain Orientation during the MBE Growth of ZnTe on a-Plane Sapphire
T. Nakasu T. Aiba S. Yamashita S. Hattori W-C. Sun K. Taguri F. Kazami M. Kobayashi T. Asahi
18th International Conference on Molecular Beam Epitaxy   Sep 2014   
TuC3-5
Fluorescence Intensity Cure of Ba2ZnS4:Mn Red Phosphor Nanoparticles toward the Silicon Solar Cell Application
MIYOKO FURUI Y. UMEJIMA M. KOBAYASHI
The 2014 International Conference on Nanoscience + Technology   Jul 2014   
NO-WeM8
Effect of (0001) Surface on the Orientation of ZnTe Epilayer/Sapphire Substrate
Taizo Nakasu Takayuki Aiba Sotaro Yamashita Shota Hattori Wei-Che Sun Kosuke Taguri Fukino Kazami Masakazu Kobayashi Toshiaki Asahi
56th Electronic Materials Conference   Jun 2014   
PS9
The growth of AgGaTe2 layer on Mo and effect of the Ag2Te buffer layer on the film quality
Uruno Aya Usui Aya Takeda Yuji Inoue Tomohiro Kobayashi Masakazu
41st International Symposium on Compound Semiconductors   May 2014   
P42
Different Orientation of AgGaTe2 and AgAlTe2 Layers Grown on a-plane Sapphire Substrates by a Closed Space Sublimation Method
A. Usui A. Uruno M. Kobayashi
41st Conference on the Physics and Chemistry of Surfaces and Interfaces   Jan 2014   
Mo0930
Molecular Beam Epitaxy Growth of ZnTe/ZnMgTe Waveguide Structures and Propagation Light Intensity Change by the Applied Field
W. Sun T. Nakasu K. Taguri T. Aiba S. Yamashita M. Kobayashi H. Togo S. Asahi
The 30th North American Conference on Molecular Beam Epitaxy   Oct 2013   
P20
Growth of AgGaTe2 Layers for a Novel Photovoltaic Material
Aya Uruno Ayaka Usui Masakazu Kobayashi
2014 II-VI Workshop   Oct 2013   
8.6
Growth and Electro-Optical Characteri-zation of ZnMgTe/ZnTe Waveguide by Molecular Beam Epitaxy
Wei-Che Sun Taizo Nakasu Kousuke Taguri Takayuki Aiba Sotaro Yamashita Masakazu Kobayashi Hiroyoshi Togo Toshiaki Asahi
The 16th International Conference on II-VI Compounds and Related Materials   Sep 2013   
Th-A3
Preparation of High Transmittance Ba2ZnS3:Mn Red Phosphor Nanoparticle Layers for Si Solar Cells
Miyoko Furui Masakazu Kobayashi
The 16th International Conference on II-VI Compounds and Related Materials   Sep 2013   
We-P16
Growth of CuGaTe2 Based Compounds by a Closed Space Sublimation Method
Ayaka Usui Aya Uruno Masakazu Kobayashi
The 16th International Conference on II-VI Compounds and Related Materials   Sep 2013   
We-P12
MBE Growth and Characterization of ZnTe Epilayers on m-Plane Sapphire Substrates
T. Nakasu W. Sun S. Yamashita T. Aiba K. Taguri M. Kobayashi T. Asahi H. Togo
The 16th International Conference on II-VI Compounds and Related Materials   Sep 2013   
We-B2
Growth of AgGaTe2 Layers on a- and c-Plane Sapphire Substrates by a Closed Space Sublimation Method
Aya Uruno Ayaka Usui Masakazu Kobayashi
The 16th International Conference on II-VI Compounds and Related Materials   Sep 2013   
Mo-B2
(211) oriented domain formation during the growth of ZnTe on m-plane sapphire by MBE
Taizo Nakasu Masakazu Kobayashi Hiroyoshi Togo Toshiaki Asahi
The 55th Annual Electronic Materials Conference   Jun 2013   
X5
(211) oriented ZnTe growth on m-plane sapphire by MBE
T. Nakasu M. Kobayashi H. Togo T. Asahi
The 40th International Symposium on Compound Semiconductors   May 2013   
MoPC-01-10
Deposition of AgGaTe3 on Sapphire Substrates by Closed Space Sublimation
A. Uruno A. Usui M. Kobayashi
The 40th International Symposium on Compound Semiconductors   May 2013   
MoPC-01-17
MBE growth and pole figure analysis of ZnTe epilayers on sapphire substrates
Taizo Nakasu Masakazu Kobayashi
The 18th European Molecular Beam Epitaxy Workshop   Mar 2013   
TuP.39
MBE Growth of ZnTe epilayers on m-plane (10-11) sapphire substrates
Taizo Nakasu Yuki Kumagai Kimihiro Nishimura Masakazu Kobayashi
The 18th International Conference on Molecular Beam Epitaxy   Sep 2012   
ThB-3-2
Preparation of nanoparticle phosphor films and its application to solar cells
Masakazu Kobayashi AyakaYagi Sayako Hamaguchi
IEEE 12th International Conference on Nanotechnology   Aug 2012   
Fabrication of nanoparticle phosphors and application to the transparent ink
Masakazu Kobayashi Ayaka Yagi
International Conference on Nanoscience + Technology   Jul 2012   
SO9-3
Growth of AgGaTe3 Layers by a Closed Space Sublimation Method
Aya Uruno Taizo Nakasu Masakazu Kobayashi
The Electronic Materials Conference   Jun 2012   
L9
Growth of ZnTe Epilayers on Severely Lattice Mismatched c-plane Sapphire by MBE
Taizo Nakasu Yuki Kumagai Kimihiro Nishimura Aya Uruno Masakazu Kobayashi
The Electronic Materials Conference   Jun 2012   
L4
Fabrication of ZnMgTe/ZnTe/ZnMgTe Waveguide Structures
Yuki Kumagai Taizo Nakasu Kimihiro Nishimura Masakazu Kobayashi
Asia-Pacific Microwave Photonics Conference   Apr 2012   
PB-13
ZnO Coated Nanoparticle Phosphors [Invited]
Masakazu Kobayashi
MRS Fall Meeting & Exhibit   Nov 2011   
M9.1
Growth of ZnMgTe/ZnTe Waveguide Structures and Analysis of the Light Polarization with the Electric Field
Y. Kumagai M. Kobayashi
2011 International Conference on Solid State Devices and Materials   Aug 2011   
P-8-23
X-ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates
M.Kobayashi Y. Kumagai T.Baba S.Imada
15th International Conference on II-VI Compounds   Aug 2011   
Thu-P24
Preparation of red phosphor nanoparticle films for the application to silicon solar cells
Masakazu Kobayashi AyakaYagi Miwa Inaguma SayakoHamaguchi
Electronic Materials Conference   Jun 2011   
N1
Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (002) substrates by molecular beam epitaxy
Y. Kumagai S. Imada T. Baba M. Kobayashi
The 16th International Conference on Molecular Beam Epitaxy   Aug 2010   
P3.18
SrGa2S5:Eu nanoparticle phosphors prepared by a ball milling method
M. Kobayashi S. Hamaguchi T. Yamamoto
World Congress on Particle Technology   Apr 2010   
The Effects of Post-Annealing on the Crystallinity and the Optical Properties of SrGa2S5:Eu Nanoparticles
S. Hamaguchi R. Takeuchi T. Yamamoto M. Kobayashi
The 16th International Display Workshops   Dec 2009   
PHp - 16
X-ray Diffraction Studies of ZnMgTe/ZnTe Layered Structures and ZnTe/Si Structures
M. Kobayashi S. Imada T. Baba S. Sakurasawa
2009 II-VI Workshop   Oct 2009   
7.6
DOPED TERNARY COMPOUND NANOPARTICLES PHOSPHORS
M.Kobayashi S.Hamaguchi T.Yamamoto
4th Asian Particle Technology Symposium   Sep 2009   
Growth and characterization of ZnMgTe/ZnTe layered structures grown by molecular beam epitaxy
S. Imada T. Baba S. Sakurasawa M. Kobayashi
The 14th International Conference on II-VI compounds   Aug 2009   
Mo5p-12 
Synthesis and optical characterization of ternary compound phosphor based core/shell nanoparticles
Hamaguchi Sayako Kobayashi Masakazu
14th International Workshop on Inorganic and Organic Electroluminescence & 2008 International Conference on the Science and Technology of Emissive Displays and Lighting 2008   Sep 2008   
2-13-PO
Optical Property Characterization of Core/shell Nanoparticle Phosphor Materials Prepared by the Ball Milling Method
M. Kobayashi S. Hamaguchi
International conference on nanoscience + technology   Jul 2008   
NO2-TuA2
硫化物系蛍光体ナノ粒子の光学的特性の改善
浜口紗也子 小林正和
第55回応用物理学関係連合講演会    Mar 2008   応用物理学会
28p-ZD-15
Electrical Properties of Self-Cataltyic GaN Nanowires Grown by MBE
C E Kendrick M. Kobayashi S. M. Durbin
2008 International Conference On Nanoscience and Nanotechnology   Feb 2008   
P56
Synthesis and optical characterization of ternary compound phosphor nanoparticles by the ball-milling method
M. Kobayashi S. Hamaguchi
2008 International Conference On Nanoscience and Nanotechnology   Feb 2008   
A1-1130
Novel PV device directly emitting laser beam using III-V materials for space solar power system
K.Fujita M.Kobayashi H.Ohta H.Furukawa M.Niino
17th International Photovoltaic Science and Engineering Conference   Dec 2007   
Mechanisms in the formation of high quality Schottky contacts to n-type ZnO
M.W. Allen C.H. Swartz M. Henseler R.J. Reeves J.B. Metson H. Von Wenckstern M. Grundmann S.A. Hafield P.H. Jefferson P.D.C. King T.D. Veal C. McConville M. Kobayashi S.M. Durbin
Symposium L of the 2007 Fall Meeting of the Materials Research Society   Nov 2007   
Preparation of ZnS:Mn3+ and other sulphur compound nanoparticles by a ball-milling method
Sayako Hamaguchi Shinji Ishizaki Masakazu Kobayashi
13th INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS   Sep 2007   
3D Branching GaN Nanowires
C.E. Kendrick R. Tilley M. Kobayashi S.M. Durbin
Spring Meeting of the European Materials Research Society   May 2007   
Preparation and characterization of II-VI compound nano-particles prepared by a ball milling method
M.Kobayashi S. Ishizaki M. Uenishi
Nanotech Insight 2007   Mar 2007   
GaN Nanotrees
C.E. Kendrick R. Tilley M. Kobayashi S.M. Durbin
3rd International Conference on Advanced Materials and Nanotechnology   11 Feb 2007   
Electroluminescence from Single 4D GaN Nanowire Grown by Self-Catalytic Molecular Beam Epitaxy
Chito E. Kendrick R. Tilley M. Kobayashi R. J. Reeves S. M. Durbin
MRS fall meetings Symposium I: Advances in III-V Nitride Semiconductor Materials and Devices   Nov 2006   
I7.52
Self branching GaN nanowires
C.E Kendrick P.A. Anderson R. Tilley M. Kobayashi S.M. Durbin
14th International Conference on Molecular Beam Epitaxy   Sep 2006   
Al and N co-doped ZnTe Layers Grown by MBE
A.Ichiba M. Kobayashi
14th International Conference on Molecular Beam Epitaxy   Sep 2006   
Self-assembling GaN branching nanowires
C.E Kendrick P.A. Anderson P. Miller R. Tilley R.J. Reeves M. Kobayashi S.M. Durbin
2006 International Conference On Nanoscience and Nanotechnology   Jul 2006   
Growth and Optical Property Characterizations of ZnTe:(Al、N) Layers Using a Co-doping Technique
A. Ichiba J. Ueno K. Ogura S. Katsuta M. Kobayashi
12th INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS   Sep 2005   
Thu-P-47
MBE Growth of ZnSe/MgCdS and ZnCdS/MgCdS Superlattices for UV-A Sensors
J.Ueno K.Ogura A.Ichiba S.Katsuta M.Kobayashi K.Onomitsu Y.Horikoshi
12th INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS   Sep 2005   
Thu-P-18
II-VI compound nano-particles prepared by a ball milling method
M.Kobayashi S. Ishizaki M. Uenishi
International conference on nanomaterials NANO2005   Jul 2005   
Preparation of SrS:Ce/ZnO core-shell nanoparticles using reverse micelle method
Yusuke Kusakari Shinji Ishizaki Masakazu Kobayashi
2004 MRS fall meetings Symposium B: Progress in Semiconductor Materials IV ? Electronic and Optoelectronic Applications   Nov 2004   
B10.2
Fabrication of ZnO Coated ZnS:Mn3+ Nanoparticles
Shinji Ishizaki Yusuke Kusakari Masakazu Kobayashi
2004 MRS fall meetings Symposium B: Progress in Semiconductor Materials IV ? Electronic and Optoelectronic Applications   Nov 2004   
B2.22
Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices
M. Kobayashi M. Enami J. Ueno S. Katsuta A. Ichiba
The 13th International Conference on Molecular Beam Epitaxy (MBE 2005) Conference   Aug 2004   Centre at Heriot-Watt University
TuA2.4
MBE growth of ZnMgCdS compounds on (002) GaAs for UV-A sensors
M. ENAMI K. TSUTSUMI F. HIROSE S. KATSUTA M. KOBAYASHI
11th International Conference on II-VI Compounds   Sep 2003   
生体内の酸類がelastin・desmosineの光学的特性に与える影響の検討
上田泰央 小林正和
第64回応用物理学会学術講演会    Aug 2003   応用物理学会
31a-Q-8
Low Temperature Treatment of the (002) ZnTe Substrate Surface with the Assist of Atomic Hydrogen
K. Tsutsumi H. Terakado M. Enami M. Kobayashi
30th Conference on the Physics and Chemistry of Semiconductor Interfaces   Jan 2003   
Diffusion Profiles of Se in the bulk ZnTe
M. Kobayashi H. Terakado R. Sawada A. Arakawa K. Sato
10 TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS   Sep 2001   
Autofluorescence Spectroscopy Analysis of the Human Bronchus using a UV Laser Diode
M. Kobayashi K. Shibuya H. Hoshino T. Fujisawa
14TH WORLD CONGRESS OF THE INTERNATIONAL SOCIETY FOR LASER SURGERY AND MEDICINE   Aug 2001   
CdS based novel light emitting device structures grown by MBE
M.Kobayashi K. Kitamura H. Umeya A. W. Jia A. Yoshikawa M. Shimotomai Y. Kato K. Takahashi
3rd International Symposium on Blue laser and Light Emmitting Diodes   Mar 2000   
Cross-Sectional Scanning Tunneling Microscopy Characterization of Cubic GaN Epilayers Grown on (002) GaAs
T. Kazama F. Yasunaga Y. Taniyasu A. Jia Y. Kato M. Kobayashi A. Yoshikawa K. Takahashi
3rd International Symposium on Blue laser and Light Emmitting Diodes   Mar 2000   
Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (002) Substrates by MOVPE
Y. Taniyasu K. Suzuki D.H. Lim A. Jia M.Shimotomai Y. Kato M. Kobayashi A. Yoshikawa K. Takahashi
3rd International Symposium on Blue laser and Light Emmitting Diodes   Mar 2000   

Research Grants & Projects

 
Active Compensation of the substrate temperature for the growth of high quality II-VI compound films
Enhancement of Fatigue Damage due to Environmental Variation and its Recovery Treatment
Investigation of the Novel Characteristics of Widebandgap Semiconductor Materials Grown by Multi-Phase Epitaxy
DEVELOPMENT OF MULTIPLY PHOTO-ASSISTED MOVPE FOR FABRICATION OF SEMICONDUCTOR BLUE LASER DIODES
A New in-situ Optical Probing Method for the Surface Reaction in Heteroepitaxy : Surface Photo-Interference