論文

査読有り
2020年1月

Highly Monochromatic Electron Emission from Graphene-Hexagonal Boron Nitride-Si Heterostructure

ACS Applied Materials & Interfaces
  • Murakami, Katsuhisa
  • ,
  • Igari, Tomoya
  • ,
  • Mitsuishi, Kazutaka
  • ,
  • Nagao, Masayoshi
  • ,
  • Sasaki, Masahiro
  • ,
  • Yamada, Yoichi

12
3
開始ページ
4061
終了ページ
4067
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1021/acsami.9b17468
出版者・発行元
ACS

In this work, a planar electron emission device based on a graphene/hexagonal boron nitride (h-BN)/n-Si heterostructure is fabricated to realize highly monochromatic electron emission from a flat surface. The h-BN layer is used as an insulating layer to suppress electron inelastic scattering within the planar electron emission device. The energy spread of the emission device using the h-BN insulating layer is 0.28 eV based on the full-width at half-maximum (FWHM), which is comparable to a conventional tungsten field emitter. The characteristic spectral shape of the electron energy distributions reflected the electron distribution in the conduction band of the n-Si substrate. The results indicate that the inelastic scattering of electrons at the insulating layer is drastically suppressed by the h-BN layer. Furthermore, the maximum emission current density reached 2.4 A/cm(2), which is comparable to that of a conventional thermal cathode. Thus, the graphene/h-BN heterostructure is a promising material for planar electron emission devices to obtain a highly monochromatic electron beam and a high electron emission current density.

リンク情報
DOI
https://doi.org/10.1021/acsami.9b17468

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