関口隆史 (Takashi Sekiguchi) - マイポータル

基本情報

Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates

Takashi Sekiguchi, Yoshiki Sakuma, Yuji Awano, Naoki Yokoyama

Journal of Applied Physics 83(9) 4944-4950 1998年5月1日
Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates

Takashi Sekiguchi, Yoshiki Sakuma, Yuji Awano, Naoki Yokoyama

Journal of Applied Physics 83(9) 4944-4950 1998年5月1日
Cathodoluminescence study on dislocations in silicon

T. Sekiguchi, K. Sumino

Journal of Applied Physics 79(6) 3253-3260 1996年3月15日
Cathodoluminescence study on dislocations in silicon

T. Sekiguchi, K. Sumino

Journal of Applied Physics 79(6) 3253-3260 1996年3月15日
カソ−ドルミネッセンス顕微法(I)(II)(III)

電子顕微鏡(1998) 33, 186-190 電子顕微鏡(1999) 34, 30-34 電子顕微鏡(1999) 34, 130-134
Quantitative electron beam tester for the defects in semiconductors -CL/EBIC/SDLTS-

Res. Sci. Instrum. (1995) 66, 4277-4282
Effect of hydrojenation on ZnO luminescence

Jpn. J. Appl. Phys. (1997) 36, L289-291
Quantitative electron beam tester for the defects in semiconductors -CL/EBIC/SDLTS-

Res. Sci. Instrum. (1995) 66, 4277-4282
Effect of hydrojenation on ZnO luminescence

Jpn. J. Appl. Phys. (1997) 36, L289-291