2010年12月
Photon-induced phonon excitation process as low-temperature nonequillibrium nano-surface modification of silicon
SURFACE & COATINGS TECHNOLOGY
- ,
- 巻
- 205
- 号
- 7
- 開始ページ
- 1826
- 終了ページ
- 1829
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.surfcoat.2010.07.121
- 出版者・発行元
- ELSEVIER SCIENCE SA
A novel technique to achieve non-thermal annealing of implanted semiconductor dopants is proposed on the basis of photon-induced phonon excitation process as low-temperature nano-surface modification of semiconductors. The present approach is based on the concept that the energy required for re-crystallization and activation of the dopants is supplied to the dopant layer via nonequillibrium adiabatic process induced by ultra-short pulse laser irradiation at room temperature. Ultra-short pulse laser beam with a pulse duration of 100 fs has been used in the present study for investigations on phonon excitation features via pump-probe measurement of reflectivity and for demonstration of room-temperature re-crystallization and activation of ion-implanted silicon substrates. (C) 2010 Elsevier B.V. All rights reserved.
- リンク情報
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- DOI
- https://doi.org/10.1016/j.surfcoat.2010.07.121
- J-GLOBAL
- https://jglobal.jst.go.jp/detail?JGLOBAL_ID=201002213397134934
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000286343100005&DestApp=WOS_CPL
- ID情報
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- DOI : 10.1016/j.surfcoat.2010.07.121
- ISSN : 0257-8972
- J-Global ID : 201002213397134934
- Web of Science ID : WOS:000286343100005