The recrystallization process of the phosphorus ion implantation-induced amorphous layer in 4H-SiC(1 1 2-0) is investigated in the annealing temperature range from 660 to 720 degrees C by means of Rutherford backscattering spectrometry. The phosphorus ions are multiply implanted to p-type 4H-SiC(1 1 2-0) at the energy range from 40 to 230 keV at a total fluence of 1 x 10(15) cm(-2) to form the implantation layer with a phosphorus concentration of 4.0 x 10(20) cm(-3) and a thickness of 200 nm. The amorphous-substrate interface shifts to the surface in equal thickness intervals for equal annealing time intervals, indicating a uniform recrystallization velocity. The recrystallization rate for the phosphorus implanted 4H-SiC(1 1 2-0) is 4 times faster than that in argon implanted samples and increased with an activation energy of 3.4 eV, which is identical to that of the recrystallization of amorphized 6H-SiC(1 1 2-0) and (1 1 -0 0). (c) 2005 Elsevier B.V. All rights reserved.