清水 三聡

Generation of cubic phase in molecular-beam-epitaxy-grown hexagonal InGaN epilayers on InN 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45(1A) 57-60 2006年1月  

Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE 

JOURNAL OF CRYSTAL GROWTH 278(1-4) 378-382 2005年5月  

Air stable n-type top gate carbon nanotube filed effect transistors with silicon nitride insulator deposited by thermal chemical vapor deposition 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44(8-11) L328-L330 2005年  

Dynamically stable gallium-induced 3x3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy 

JOURNAL OF APPLIED PHYSICS 95(7) 3761-3764 2004年4月  

Impact of vicinal sapphire (0001) substrates on the high-quality AIN films by plasma-assisted molecular beam epitaxy 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(11A) L1293-L1295 2003年11月  

The effect of gallium adsorbate on SiC(0001) surface for GaN by MBE 

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 240(2) 326-329 2003年11月  

Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy 

JOURNAL OF APPLIED PHYSICS 94(5) 3260-3263 2003年9月  

Initial stage of GaN nucleation on root 3 x root 3 R30 degrees-Ga reconstructed 4H-SiC(0001)(Si) by molecular-beam epitaxy 

SURFACE SCIENCE 527(1-3) L197-L202 2003年3月  

Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy 

JOURNAL OF APPLIED PHYSICS 93(4) 2047-2050 2003年2月  

Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template 

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS (7) 2549-2552 2003年  

Roles of Si irradiation during the growth interruption on GaN film qualities in plasma-assisted molecular beam epitaxy 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 41(12B) L1428-L1430 2002年12月  

Control of GaN surface morphologies grown on 6H-SiC (0 0 0 1) using plasma-assisted molecular beam epitaxy 

Journal of Crystal Growth 244(1) 33-38 2002年9月  

Improvement of DC characteristics in AlGaN/GaN heterojunction field-effect transistors employing AlN spacer layer 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(9) 5563-5564 2002年9月  

Indium roles on the GaN surface studied directly by reflection high-energy electron diffraction observations 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 41(8A) L873-L875 2002年8月  

High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Bu ･er Process 

Jpn.J.Appl.Phys 41(7A) 4454-4457 2002年7月  

Growth and characterizations of InGaN on N- and Ga-polarity GaN grown by plasma-assisted molecular-beam epitaxy 

Journal of Crystal Growth 237-239(1-4) 1148-1152 2002年4月  

High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy 

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41(1AB) L28-L30 2002年1月