2017年7月
Current-driven phase-change optical gate switch using indium-tin-oxide heater
APPLIED PHYSICS EXPRESS
- ,
- ,
- ,
- ,
- 巻
- 10
- 号
- 7
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/APEX.10.072201
- 出版者・発行元
- IOP PUBLISHING LTD
We proposed and fabricated a current-driven phase-change optical gate switch using a Ge2Sb2Te5 (GST225) thin film, an indium-tin-oxide (ITO) heater, and a Si waveguide. Microfabrication technology compatible with CMOS fabrication was used for the fabrication of the Si waveguide. The repetitive phase changing of GST225 was obtained by injecting a current pulse into the ITO heater beneath the GST225 thin film. The switching operation was observed by injecting a 100-ns current pulse of 20mA into the ITO heater. The average extinction ratio over the wavelength range of 1,525 to 1,625nm was 1.2 dB. (C) 2017 The Japan Society of Applied Physics
- リンク情報
- ID情報
-
- DOI : 10.7567/APEX.10.072201
- ISSN : 1882-0778
- eISSN : 1882-0786
- ORCIDのPut Code : 45753113
- Web of Science ID : WOS:000404479100001