鈴木英一 (Eiichi Suzuki) - マイポータル

基本情報

所属: 独立行政法人産業技術総合研究所イノベーション推進本部

J-GLOBAL ID: 200901078153445246
researchmap会員ID: 5000005901

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=E58408525

MISC

Experimental study of effective carrier mobility of multi-fin-type double-gate metal-oxide-semiconductor field-effect transistors with (111) channel surface fabricated by orientation-dependent wet etching

YX Liu, E Sugimata, K Ishii, M Masahara, K Endo, T Matsukawa, H Yamauchi, S O'uchi, E Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45(4B) 3084-3087 2006年4月
Deoxidization of Cu oxide under extremely low oxygen pressure ambient

K Endo, N Shirakawa, Y Yoshida, S Ikeda, T Mino, E Gofuku, E Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(12-16) L393-L395 2006年4月
Fabrication of a vertical-channel double-gate metal-oxide-semiconductor field-effect transistor using a neutral beam etching

K Endo, S Noda, M Masahara, T Kubota, T Ozaki, SJ Samukawa, YX Liu, K Ishii, Y Ishikawa, E Sugimata …

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45(8-11) L279-L281 2006年3月
Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

M Masahara, YX Liu, K Endo, T Matsukawa, K Sakamoto, K Ishii, S O'uchi, E Sugimata, H Yamauchi, E Suzuki

APPLIED PHYSICS LETTERS 88(7) 0721031-0721033 2006年2月
Vertical ultrathin-channel multi-gate MOSFETs (MuGFETs):Technological challenges and future developments

IEEJ Transactions on Electrical and Electronics Engineering 2006年
縦型ダブルゲートMOSFETデバイス技術

昌原明植, 柳永〓, 遠藤和彦, 松川貴, 鈴木英一

電気学会誌 126(6) 702-707 2006年
Demonstration and analysis of accumulation-modeDG=MOSFET

JJAP 2006年
極低酸素分圧を用いたCu酸化物クリーニング技術

電子情報通信学会技術研究報告 105(598) 25-29 2006年
Doping integrity diagnostics of planar transistor channel structures by scanning nonlinear dielectric microscopy

T Matsukawa, M Masahara, H Tanoue, S Kanemaru, E Suzuki

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 24(1) 237-244 2006年1月
A New Fabrication Technology of FinFETs using a Neutral Beam Etching

JAPANESE JOURNAL OF APPLIED PHYSICS 45(6B) 5513-5516 2006年
Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate

JAPANESE JOURNAL OF APPLIED PHYSICS 45(4B) 3097-3100 2006年
Demonstration, analysis, and device design considerations for independent DG MOSFETs

M Masahara, YX Liu, K Sakamoto, K Endo, T Matsukawa, K Ishii, T Sekigawa, H Yamauchi, H Tanoue, S Kanemaru …

IEEE TRANSACTIONS ON ELECTRON DEVICES 52(9) 2046-2053 2005年9月
Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions

T Matsukawa, YX Liu, A Masahara, K Ishii, K Endo, H Yamauchi, E Sugimata, H Takashima, T Higashino, E Suzuki …

MICROELECTRONIC ENGINEERING 80 284-287 2005年6月
Demonstration of dopant profiling in ultrathin channels of vertical-type double-gate metal-oxide-semiconductor field-effect-transistor by scanning nonlinear dielectric microscopy

M Masahara, S Hosokawa, T Matsukawa, K Endo, Y Naitou, H Tanoue, E Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(4B) 2400-2404 2005年4月
Work function uniformity of Al-Ni alloys obtained by scanning Maxwell-stress microscopy as an effective tool for evaluating metal transistor gates

T Matsukawa, C Yasumuro, H Yamauchi, M Masahara, E Suzuki, S Kanemaru

APPLIED PHYSICS LETTERS 86(9) 094104-1-094104-3 2005年2月
Investigation of Accumulation-mode Vertical DG-MOSFET

Extended Abstract of SSDM 2005 586-587 2005年
Device design consideration for Vth-controllable 4-terminal DG-MOSFET

JAPANESE JOURNAL OF APPLIED PHYSICS 44(4B) 2351-2356 2005年
Electron Mobility in Multi-FinFET with a (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

MICROELECTRONIC ENGINEERING 80(6) 386-389 2005年
超臨界流体を用いた微細構造上への酸化物薄膜の堆積

Extended Abstract(52th Spring Meeting, 2005); The Japan Society of Applied Physics 2 727-727 2005年
Fabrication and Characterization of Vertical-type, Self-aligned Asymmetric DGMOSFET

APPLIED PHYSICS LETTERS 86 1235121-1235123 2005年

もっとみる

共同研究・競争的資金等の研究課題

1. 微細シリコンデバイス技術 2. 電子材料プロセス技術 3. デバイス材料評価技術