橋本保 (Tamotsu Hashimoto) - マイポータル

基本情報

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T55878661

Stability and electronic structure of Ge(105)1x2: a first-principles theoretical study

T Hashimoto, Y Morikawa, K Terakura

SURFACE SCIENCE 576(1-3) 61-66 2005年2月
Hydrogen-Induced Instability of the Ge(105) Surface

PHYSICAL REVIEW LETTERS 94(8) 86105-1-86105-4 2005年
Imaging of all dangling bonds and their potential on the Ge/Si(105) surface by noncontact atomic force microscopy

T Eguchi, Y Fujikawa, K Akiyama, T An, M Ono, T Hashimoto, Y Morikawa, K Terakura, T Sakurai, MG Lagally …

PHYSICAL REVIEW LETTERS 93(26) 266102-1-266102-4 2004年12月
Ab initio electronic structure study for TTF-TCNQ under uniaxial compression

S Ishibashi, T Hashimoto, M Kohyama, K Terakura

PHYSICAL REVIEW B 69(15) 155111-1-155111-7 2004年4月
Origin of the stability of Ge(105) on Si - a new structure model and surface strain relaxation

PHYSICAL REVIEW LETTERS 88(17) 176101-1-176101-4 2002年
Rebonded SB step model of Ge/Si(105)2x1: A first-principles theoretical study

HASHIMOTO T, MORIKAWA Y, FUJIKAWA Y, SAKURAI T, LAGALLY M G, TERAKURA K

SURFACE SCIENCE 513(3) L445-L450 2002年
Ground-state structure of β-C3N4 by first-principles calculations

PHYSICAL REVIEW B 64 012103-1-012103-4 2002年
Periodic conservative component of sliding friction force for atomically-flat nanosized contact areas: dependence on misfit angle and size

Y Maruyama, T Hashimoto, J Murakami, K Igarashi, S Tanemura

COMPUTATIONAL MATERIALS SCIENCE 21(3) 320-328 2001年7月