川浪仁志 (Hitoshi Kawanami) - マイポータル

基本情報

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H71601711

Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE

N Gopalakrishnan, K Baskar, H Kawanami, Sakata, I

JOURNAL OF CRYSTAL GROWTH 250(1-2) 29-33 2003年3月
Ultrafast active transmission lines with low-k polyimide integrated with ultrafast photoconductive switches

S Yagi, T Itatani, H Kawanami, S Gorwadkar, T Uemura, T Fukushima, H Itatani, M Tomoi, M Tacano

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42(2B) L154-L156 2003年2月
Study of Ge0.96Si0.04 epilayers grown on Si (001) at high temperature

PENG C S, KAWANAMI H, LI Y K, LI G H, HUANG Q, ZHOU J M

J. Crystal Growth 227/228 786-790 2001年