藤原裕之 (Hiroyuki Fujiwara) - マイポータル - researchmap

基本情報

所属: 独立行政法人産業技術総合研究所太陽光発電研究センターシリコン新材料チーム

J-GLOBAL ID: 200901024264658289
researchmap会員ID: 5000006585

外部リンク: http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H55878661

研究分野

2

MISC

15

Effects of carrier concentration on the dielectric function of ZnO:Ga and In 2O 3:Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

Hiroyuki Fujiwara, Michio Kondo

Physical Review B - Condensed Matter and Materials Physics 71(7) 0751109-1-075109-10 2005年2月
Effects of carrier concentration on the dielectric function of ZnO : Ga and In2O3 : Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

H Fujiwara, M Kondo

PHYSICAL REVIEW B 71(7) 075109-1-075109-10 2005年2月
Real-time monitoring and process control in amorphous/crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy

H Fujiwara, M Kondo

APPLIED PHYSICS LETTERS 86(3) 032112-1-032112-3 2005年1月
Nucleation mechanism of microcrystalline silicon from the amorphous phase

H Fujiwara, M Kondo, A Matsuda

JOURNAL OF NON-CRYSTALLINE SOLIDS 338 97-101 2004年6月
Real-time studies of amorphous and microcrystalline Si : H growth by spectroscopic ellipsometry and infrared spectroscopy

H Fujiwara, M Kondo, A Matsuda

THIN SOLID FILMS 455 670-674 2004年5月
a-Si:H/c-Siヘテロ接合太陽電池の実時間構造制御

第31回アモルファス物質の物性と応用セミナー 85-91 2004年
Real-time observation of the energy band diagram during microcrystalline silicon p-i interface formation

H Fujiwara, M Kondo, A Matsuda

APPLIED PHYSICS LETTERS 83(21) 4348-4350 2003年11月
Fundamental aspects of low-temperature growth of microcrystalline silicon

M Kondo, H Fujiwara, A Matsuda

THIN SOLID FILMS 430(1-2) 130-134 2003年4月
Interface-layer formation in microcrystalline Si : H growth on ZnO substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

H Fujiwara, M Kondo, A Matsuda

JOURNAL OF APPLIED PHYSICS 93(5) 2400-2409 2003年3月
Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth

H Fujiwara, M Kondo, A Matsuda

APPLIED PHYSICS LETTERS 82(8) 1227-1229 2003年2月
An approach to device grade amorphous and microcrystalline silicon thin films fabricated at higher deposition rates

Michio Kondo, Akihisa Matsuda

Current Opinion in Solid State and Materials Science 6(5) 445-453 2002年10月
Stress-induced nucleation of microcrystalline silicon from amorphous phase

H Fujiwara, M Kondo, A Matsuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(5A) 2821-2828 2002年5月
Depth profiling of silicon-hydrogen bonding modes in amorphous and microcrystalline Si : H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry

H Fujiwara, M Kondo, A Matsuda

JOURNAL OF APPLIED PHYSICS 91(7) 4181-4190 2002年4月
Micro crystalline silicon nucleation sites in the sub-surface of hydrogenated amorphous silicon

H Fujiwara, M Kondo, A Matsuda

SURFACE SCIENCE 497(1-3) 333-340 2002年1月
Nucleation Mechanism of Microcrystalline Silicon Studied by Real Time Spectroscopic Ellipsometry and Infrared Spectroscopy

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDING 609 A2.1.1-A2.1.12 2001年

共同研究・競争的資金等の研究課題

1

薄膜太陽電池