MISC

2005年

Incubation-free growth of polycrystalline si films by plasma-enhanced chemical vapor deposition using pulsed discharge under near atmospheric pressure

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
  • H Kitabatake
  • ,
  • M Suemitsu
  • ,
  • H Kitahata
  • ,
  • S Nakajima
  • ,
  • T Uehara
  • ,
  • Y Toyoshima

44
20-23
開始ページ
L683
終了ページ
L686
記述言語
英語
掲載種別
DOI
10.1143/JJAP.44.L683
出版者・発行元
INST PURE APPLIED PHYSICS

By using the plasma-enhanced chemical vapor deposition (PE-CVD) under near-atmospheric pressures, we have achieved a high rate growth, 1 nm/s, of polycrystalline, Si films on glass substrates without incubation layers for the first time. We have employed a short-pulse based system for a stable operation of discharge at atmospheric pressures without inert gas dilution. This feature enabled us to employ an extremely high dilution of monosilane by hydrogen, which should be the origin of the incubation-free growth of our films, in addition to the basic advantage for the high rate growth inherent in atmospheric reaction systems. The films are mainly consisted of polycrystalline Si with grain size ranging from 5 nm to above 10 nm, as observed by Raman scattering, X-ray diffractions and cross sectional transmission electron microscopy.

Web of Science ® 被引用回数 : 9

リンク情報
DOI
https://doi.org/10.1143/JJAP.44.L683
CiNii Articles
http://ci.nii.ac.jp/naid/150000013602
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000229947100021&DestApp=WOS_CPL

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