2012年8月
Characteristics of [6]phenacene thin film field-effect transistor
APPLIED PHYSICS LETTERS
- 巻
- 101
- 号
- 8
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.4747201
- 出版者・発行元
- AMER INST PHYSICS
Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility mu as high as 3.7 cm(2) V-1 s(-1). The similar O-2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O-2 sensing in [6]phenacene FET. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747201]
- リンク情報
- ID情報
-
- DOI : 10.1063/1.4747201
- ISSN : 0003-6951
- Web of Science ID : WOS:000308420800091