NATORI AKIKO

Profile Information

Degree: 理学博士(東京大学)

Researcher number: 50143368
J-GLOBAL ID: 200901054129320614
researchmap Member ID: 5000015332

External link

Research Interests

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Education

- Mar, 1972

物理学専攻, Graduate School, Division of Science, The University of Tokyo
- Mar, 1967

物理学科, Faculty of Science, The University of Tokyo

Committee Memberships

Papers

The anisotropy of ac conductivity and dielectric constant of anisotropic conductor-insulator composites

Yuichi Hazama, Jun Nakamura, Akiko Natori

JOURNAL OF MATERIALS SCIENCE, 45(11) 2843-2851, Jun, 2010 Peer-reviewed
Control mechanism of friction by dynamic actuation of nanometer-sized contacts

Hiroyuki Iizuka, Jun Nakamura, Akiko Natori

PHYSICAL REVIEW B, 80(15) 155449-1-8, Oct, 2009 Peer-reviewed
Ballistic thermal conductance of electrons in graphene ribbons

Eiji Watanabe, Sho Yamaguchi, Jun Nakamura, Akiko Natori

PHYSICAL REVIEW B, 80(8) 085404-1-6, Aug, 2009 Peer-reviewed
Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110)

Motoi Hirayama, Akiko Natori, Jun Nakamura

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(4) 2062-2065, Jul, 2009 Peer-reviewed
In-plane strain effects on dielectric properties of the HfO2 thin film

Sadakazu Wakui, Jun Nakamura, Akiko Natori

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 27(4) 2020-2023, Jul, 2009 Peer-reviewed
Structural and electronic properties of the planar C-skeleton polymers

Jun Nakamura, Nariaki Arimura, Motoi Hirayama, Akiko Natori

APPLIED PHYSICS LETTERS, 94(22) 223107-1-3, Jun, 2009 Peer-reviewed
Band-bending effects on scanning tunneling microscope images of subsurface dopants: First-principles calculations

Motoi Hirayama, Jun Nakamura, Akiko Natori

JOURNAL OF APPLIED PHYSICS, 105(8) -, Apr, 2009
Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field

Jun-ichi Inoue, Tomo Chiba, Akiko Natori, Jun Nakamura

PHYSICAL REVIEW B, 79(3) 035206-1-8, Jan, 2009 Peer-reviewed
Size effects in friction of multiatomic sliding contacts

Masanori Igarashi, Akiko Natori, Jun Nakamura

PHYSICAL REVIEW B, 78(16) 165427-1-10, Oct, 2008 Peer-reviewed
Atomic scale dielectric constant near the SiO2/Si(001) interface

Sadakazu Wakui, Jun Nakamura, Akiko Natori

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26(4) 1579-1584, Jul, 2008 Peer-reviewed
Semiconducting nature of the oxygen-adsorbed graphene sheet

Jun Ito, Jun Nakamura, Akiko Natori

JOURNAL OF APPLIED PHYSICS, 103(11) 113712, 1-5, Jun, 2008
Nagative donors in multivalley semiconductors

J. Inoue, J. Nakamura, A. Natori

Phys. Rev. B, 77 125213-1 - 125213-5, 2008
Structural bistability of the oxygen-adsorbed graphene sheet

J. Nakamura, J. Ito, A. Natori

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 100 052019-052022, 2008 Peer-reviewed
Ballistic thermal conductance of a graphene sheet

Koichi Saito, Jun Nakamura, Akiko Natori

PHYSICAL REVIEW B, 76(11) 115409-1 - 115409-4, Sep, 2007 Peer-reviewed
Simulations of scanning Tunneling Microscopy for B-/P-doped Si(111) surfaces

Motoi Hirayama, Jun Nakamura, Akiko Natori

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(8B) 5643-5646, Aug, 2007
Dielectric properties of the interface between Si and SiO2

Sadakazu Wakui, Jun Nakamura, Akiko Natori

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 46(5B) 3261-3264, May, 2007 Peer-reviewed
Mechanism of velocity saturation of atomic friction force and the dynamic superlubricity at torsional resonance

M.Igarashi, J.Nakamura, A.Natori

Jpn.J.Appl.Phys., 46 5591-5594, 2007
Nano-scale profile of the dielectric constant near the Si/oxide interface: A first-principles approach

J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori

ECS Transactions, 11(6) 173-182, 2007 Peer-reviewed
First-principles evaluations of dielectric constants for ultra-thin semiconducting films

Jun Nakamura, Akiko Natori

SURFACE SCIENCE, 600(18) 4332-4336, Sep, 2006
ac conductivity and dielectric constant of conductor-insulator composites

Tan Benny Murtanto, Satoshi Natori, Jun Nakamura, Akiko Natori

PHYSICAL REVIEW B, 74(11) 115206, 1-7, Sep, 2006 Peer-reviewed

Misc.

Surface-electromigration-induced step structure transition on Si(111) vicinal surfaces

A. Natori

日本結晶成長学会誌, 29(1) 44-49, 2002 Peer-reviewed

Books and Other Publications

表面物性工学ハンドブック

小間篤, 青野正和, 石橋幸治, 塚田捷, 常行真司, 長谷川修司, 八木克道, 吉信淳編 (Role: Joint author, 1.7.1 モンテカルロシミュレーション、14.4.1 表面エレクトロマイグレーション(理論）、14.4.3 エレクトロマイグレーションによるステップ再配列（理論）)

丸善, 2007
電子材料ハンドブック

木村忠正, 八百隆文, 奥村次徳, 豊田太郎 (Role: Joint author, １．４固体の伝導寄稿)

朝倉書店, 2006
「半導体大辞典」2.3 表面現象

名取晃子 (Role: Joint author)

工業調査会, 2000
"Advances in the understanding of crystal growth mechanisms" Step structure of Si(111) vicinal surfaces

A.Natori (Role: Joint author)

North-Holland, 1997
表面科学シリーズ２「表面における理論Ｉ」６-１節モンテカルロ法

名取晃子 (Role: Joint author)

丸善, 1995
「結晶成長ハンドブック」5.1.3 テラスにおける表面拡散

名取晃子 (Role: Joint author)

共立出版, 1995
"Metal-semiconductor interfaces" 2.2 Formation of metal-overlayer on semiconductors by surface electromigration

A.Natori, H.Yasunaga (Role: Joint author)

Ohmsha, 1995
電子工学初歩シリーズ「半導体物性」

名取晃子

培風館, 1995
「電磁気学」第１章静電界

名取晃子 (Role: Joint author)

近代科学社, 1993

Presentations

101

Half-metallic states of Mn atomic wires on GaAs(110)

M.Hirayama, J.Nakamura, A.Natori

Int. Sympo. on Surface Science and Nanotechnology, Nov, 2008
First-principles evaluation of the polytype-dependence of the local dielectric constant for SiC

K.Sato, JY.Iwasaki, S.Wakui, J.Nakamura, A.Natori

Int. Sympo. on Surface Science and Nanotechnology, Nov, 2008
Conductivity and dielectric constant of anisotropic CNT/polymer composites

Y.Hazama, J.Nakamura, A.Natori

Int. Sympo. on Surface Science and Nanotechnology, Nov, 2008
Dielectric constant of the ultra-thin La2O3 (0001) film

R.Yanai, J.Nakamura, A.Natori

Int. Sympo. on Surface Science and Nanotechnology, Nov, 2008
Structural stability and cohesive properties of the oxygen-adsorbed graphene

S.Eguchi, J.Nakamura, A.Natori

Int. Sympo. on Surface Science and Nanotechnology, Nov, 2008
GaAs(110)表面上のGa置換Mn原子鎖のスピン状態と電子状態

平山基, 中村淳, 名取晃子

第２８回表面科学学術講演会, Nov, 2008
HfO2超薄膜の誘電特性

涌井貞一, 中村淳, 名取晃子

第２８回表面科学学術講演会, Nov, 2008
カーボンナノチューブ分散媒質の異方的電気伝導特性

狭間裕一, 中村淳, 名取晃子

第２８回表面科学学術講演会, Nov, 2008
Si(111)-(7x7)表面上の銀クラスター形成過程の計算機シミュレーション

千葉朋, 冷清水裕子, 泉水一鉱, 須藤彰三, 中村淳, 名取晃子

第２８回表面科学学術講演会, Nov, 2008
La2O3(0001)超薄膜の誘電特性

谷内良亮, 涌井貞一, 中村淳, 名取晃子

第２８回表面科学学術講演会, Nov, 2008
酸素吸着グラフェンの積層構造の構造安定性と凝集性質

江口俊輔, 中村淳, 名取晃子

第２８回表面科学学術講演会, Nov, 2008
GaAs(110)表面上のGa置換Mn原子ワイヤの原子配置とスピン・電子状態

平山基, 中村淳, 名取晃子

第６９回応用物理学会学術講演会, Sep, 2008
HfO2超薄膜の局所誘電率プロファイル

涌井貞一, 中村淳, 名取晃子

第６９回応用物理学会学術講演会, Sep, 2008
Si(111)-(7x7)表面上の銀クラスター形成過程の計算機シミュレーション

千葉朋, 冷清水裕子, 岩泉一鉱, 須藤彰三, 中村淳, 名取晃子

第６９回応用物理学会学術講演会, Sep, 2008
La2O3(0001)超薄膜の誘電特性

谷内良亮, 中村淳, 名取晃子

第６９回応用物理学会学術講演会, Sep, 2008
SiC結晶多形の誘電率：第一原理計算による積層構造依存性評価

佐藤耕平, 岩崎雄一, 中村淳, 名取晃子

第６９回応用物理学会学術講演会, Sep, 2008
グラフェンリボンのバリスティック熱コンダクタンス

山口翔, 中村淳, 名取晃子

日本物理学会２００８年秋季大会, Sep, 2008
GaAs(110)表面上のGa置換MNワイヤの原子配置とスピン・電子状態

平山基, 中村淳, 名取晃子

日本物理学会２００８年秋季大会, Sep, 2008
異方的な超微粒子分散媒質の高周波電気伝導特性

狭間裕一, 中村淳, 名取晃子

日本物理学会２００８年秋季大会, Sep, 2008
酸化グラフェン積層物質の構造安定性

江口俊輔, 中村淳, 名取晃子

日本物理学会２００８年秋季大会, Sep, 2008

Profile Information

Research Interests

Research Areas

Education

Committee Memberships

Papers

Misc.

Books and Other Publications

Presentations

Professional Memberships

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