呉 鎮浩

3. *J. H. Oh, K. Nakamura, K. Ono, M. Oshima, N. Hirashita, M. Niwa, and A. Toriumi, A. Kakizaki:"Initial oxidation features of Si (100) studied by Si-2p core-level photoemission spectroscopy" 

J. Electron Spectroscopy and Related Phenomena 114-116, 395 2001年  

*J. H. Oh, H. W. Yeom, Y. Hagimoto, K. N. Hirashita, M. Niwa, A. Toriumi, A. Kakizaki, and M. Oshima：Chemical structure of the ultrathin SiO2/Si(100) interface:an angle-resolved Si 2p photoemission study 

Phys. Rev. B 63, 205310 2001年  

8. *J. H. Oh, S. K. Lee, K. P. Han, K. S. An, and C. Y. Park, “Effects of the different heat treatments on the growth and formation of iron silicide on Si(100)” 

Thin Solid Films 341, 160 1999年  

*J. H. Oh, N. I. Cho, H. J. Nam, and C. Y. Park. “Growth of very low temperature poly-Si film for TFT-LCD by remote plasma-enhanced chemical vapor deposition” 

J. Vac. Sci. Technol. A15(4), 1819 1997年