坊山晋也 (Shinya Boyama) - マイポータル

基本情報

Growth of high-quality GaN on FACELO substrate by raised-pressure HVPE

Physica Status Solidi (c) (2159-2162) 2003年
High quality GaN Grown by Raised-Pressure HVPE

physica status solidi (a) 194(528-531) 2002年
Carrier gas dependence of ELO GaN grown by hydride VPE

Journal of Crystal Growth 237-239, 1055-1059 2002年
High Quality GaN Grown by Raised-Pressure HVPE

physica status solidi (a) 194(528-531) 2002年
Carrier gas dependence of ELO GaN grown by hydride VPE

Journal of Crystal Growth 237-239, 1055-1059 2002年
Distribution of threading dislocations in epitaxial lateral Overgrowth GaN by hydride vapor-phase epitaxy using mixed carrier gas of H-2 and N-2

S Bohyama, K Yoshikawa, H Naoi, H Miyake, K Hiramatsu, Y Iyechika, T Maeda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(1) 75-76 2002年1月