2006年10月
Room-temperature ferrimagnetic semiconductor 0.6FeTiO(3)center dot 0.4Fe(2)O(3) solid solution thin films
APPLIED PHYSICS LETTERS
- ,
- ,
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- 巻
- 89
- 号
- 14
- 開始ページ
- 142503
- 終了ページ
- 1
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.2357547
- 出版者・発行元
- AMER INST PHYSICS
The authors report on the fabrication of room-temperature ferrimagnetic semiconductor thin films composed of 0.6FeTiO(3)center dot 0.4Fe(2)O(3) solid solution on alpha-Al2O3 (0001) substrates using a pulsed laser deposition method. A single ordered phase (R (3) over bar symmetry) is obtained under very limited deposition conditions including oxygen partial pressure of 2.0x10(-3) Pa and substrate temperature of 700 degrees C. The thin film with the ordered phase is an n-type semiconductor and ferrimagnetic with the Curie temperature > 400 K. The Hall effect measurements at room temperature suggest that the carrier spins are polarized. (c) 2006 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.2357547
- ISSN : 0003-6951
- Web of Science ID : WOS:000241056900066