2006年8月
Epitaxial growth of room-temperature ferrimagnetic semiconductor thin films based on the ilmenite-hematite solid solution
APPLIED PHYSICS LETTERS
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- 巻
- 89
- 号
- 8
- 開始ページ
- 082509
- 終了ページ
- 1
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.2337276
- 出版者・発行元
- AMER INST PHYSICS
Epitaxial thin films composed of 0.7FeTiO(3)center dot 0.3Fe(2)O(3) solid solution have been prepared on alpha-Al2O3 (0001) substrates by a pulsed laser deposition method, and their electrical and magnetic properties have been examined. A single phase of the ordered phase can be obtained under limited deposition conditions: oxygen partial pressure of 1.0x10(-3) Pa and substrate temperature of 600-700 degrees C. The as-deposited film is semiconducting and ferrimagnetic below room temperature, while subsequent annealing in vacuum leads to the Curie temperature above room temperature. On the other hand, the thin films with the disordered phase appear to be antiferromagnetic and also insulating. (c) 2006 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.2337276
- ISSN : 0003-6951
- Web of Science ID : WOS:000240035400065