MISC

2019年1月23日

Gate-Tunable Thermal Metal-Insulator Transition in VO <inf>2</inf> Monolithically Integrated into a WSe <inf>2</inf> Field-Effect Transistor

ACS Applied Materials and Interfaces
  • Mahito Yamamoto
  • ,
  • Ryo Nouchi
  • ,
  • Teruo Kanki
  • ,
  • Azusa N. Hattori
  • ,
  • Kenji Watanabe
  • ,
  • Takashi Taniguchi
  • ,
  • Keiji Ueno
  • ,
  • Hidekazu Tanaka

11
開始ページ
3224
終了ページ
3230
DOI
10.1021/acsami.8b18745

© 2019 American Chemical Society. Vanadium dioxide (VO 2 ) shows promise as a building block of switching and sensing devices because it undergoes an abrupt metal-insulator transition (MIT) near room temperature, where the electrical resistivity changes by orders of magnitude. A challenge for versatile applications of VO 2 is to control the MIT by gating in the field-effect device geometry. Here, we demonstrate a gate-tunable abrupt switching device based on a VO 2 microwire that is monolithically integrated with a two-dimensional (2D) tungsten diselenide (WSe 2 ) semiconductor by van der Waals stacking. We fabricated the WSe 2 transistor using the VO 2 wire as the drain contact, titanium as the source contact, and hexagonal boron nitride as the gate dielectric. The WSe 2 transistor was observed to show ambipolar transport, with higher conductivity in the electron branch. The electron current increases continuously with gate voltage below the critical temperature of the MIT of VO 2 . Near the critical temperature, the current shows an abrupt and discontinuous jump at a given gate voltage, indicating that the MIT in the contacting VO 2 is thermally induced by gate-mediated self-heating. Our results have paved the way for the development of VO 2 -based gate-tunable devices by the van der Waals stacking of 2D semiconductors, with great potential for electronic and photonic applications.

リンク情報
DOI
https://doi.org/10.1021/acsami.8b18745
PubMed
https://www.ncbi.nlm.nih.gov/pubmed/30604604
Scopus
https://www.scopus.com/record/display.uri?eid=2-s2.0-85060047358&origin=inward
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85060047358&origin=inward