Kenichiro Takakura

Profile Information

Affiliation: Kumamoto National College of Technology

Degree: 博士（工学）(筑波大学)

J-GLOBAL ID: 200901024077097141
researchmap Member ID: 5000030436

Research Interests

半導体デバイス放射線損傷

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /

Research History

Apr, 2020 - Present

National Institute of Technology (KOSEN), Kumamoto College
Apr, 2009 - Mar, 2020

Department of Information, Communication and Electronic Engineering, Kumamoto National College of Technology
Apr, 2007 - Mar, 2009

准教授, 電子工学科, 熊本電波工業高等専門学校
Apr, 2006 - Mar, 2007

助教授, 電子工学科, 熊本電波工業高等専門学校
Apr, 2002 - Mar, 2006

助手, 電子工学科, - 熊本電波工業高等専門学校

Education

Papers

Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation.

Kenichiro Takakura, Kensuke Matsumoto, Kousei Tateishi, Masashi Yoneoka, Isao Tsunoda, Shigekazu Suzuki, Shinji Kawatsuma

J. Robotics Mechatronics, 36(1) 88-94, Feb, 2024
Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing

Atsuki Morimoto, Towa Hirai, Ayato Takazaiku, Yo Eto, Hajime Kuwazuru, Kenichiro Takakura, Isao Tsunoda

Japanese Journal of Applied Physics, 63(2) 02SP50-02SP50, Jan 17, 2024
Study of deep levels in the Mg₂Si grown by vertical Bridgeman method

Kouki Fukushima, Naoki Mizunuma, Tatsuya Uematsu, Kyoko Shimizu, Takehiro Ota, Isao Tsunoda, Masashi Yoneoka, Haruhiko Udono, Kenichiro Takakura

Japanese Journal of Applied Physics, 62(SD) SD1012-SD1012, Dec 23, 2022
Low temperature formation of high-quality crystalline Ge (1 1 1) by improving Au catalyst crystallinity

Kazuaki Sumi, Noboru Shimizu, Kenichiro Takakura, Isao Tsunoda

Journal of Crystal Growth, 572 126270-126270, Oct, 2021 Peer-reviewed
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors

Maria Glória Caño de Andrade, Luis Felipe de Oliveira Bergamim, Braz Baptista Júnior, Carlos Roberto Nogueira, Fábio Alex da Silva, Kenichiro Takakura, Bertrand Parvais, Eddy Simoen

Solid-State Electronics, 183 108050-108050, Sep, 2021
Low Frequency Noise: A Show Stopper for State-of-the-art and Future Si, Ge-based and III-V Technologies

C. Claeys, A. Oliviera, A. Veloso, L. He, K. Takakura, V. Putcha, H. Amimura, E. Simoen

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Apr 8, 2021
Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Joan Marc Rafi, Giulio Pellegrini, Philippe Godignon, Sofia Otero Ugobono, Gemma Rius, Isao Tsunoda, Masashi Yoneoka, Kenichiro Takakura, Gregor Kramberger, Michael Moll

IEEE Transactions on Nuclear Science, 67(12) 2481-2489, Dec, 2020 Peer-reviewed
Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications

Eddy Simoen, Po-Chun Brent Hsu, Hao Yu, Hongyue Wang, Ming Zhao, Kenichiro Takakura, Vamsi Putcha, Uthayasankaran Peralagu, Bertrand Parvais, Niamh Waldron …

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT), Nov 3, 2020
Development of electronic circuits that can operate in high radiation environments such as nuclear power plants

Kenichiro Takakura

Impact, 2020(4) 52-53, Oct 13, 2020
Low-Frequency Noise Investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect Transistor with Different Gate Length and Orientation

K. Takakura, V. Putcha, E. Simoen, A. R. Alian, U. Peralagu, N. Waldron, B. Parvais, N. Collaert

IEEE Transactions on Electron Devices, 67(8) 3062-3068, Aug, 2020 Peer-reviewedLead author
Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 °c

Taiki Nishijima, Satoshi Shimizu, Kinta Kusano, Kazuki Kudo, Masahiro Furuta, Yutaka Kusuda, Shinichi Motoyama, Nobuyuki Naka, Tomoko Numata, Kenichiro Takakura …

AIP Advances, 10(5) 055306-055306, May 1, 2020 Peer-reviewed
Magnetotransport properties of a single-crystalline β-FeSi<inf>2</inf> layer grown on Si(001) substrate by reactive deposition epitaxy

Takashi Suemasu, Ken'ichiro Takakura, Masaya Tanaka, Tetsuo Fujii, Fumio Hasegawa

Japanese Journal of Applied Physics, Part 2: Letters, 37(3 B), Mar, 2020 Peer-reviewed
Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors

K. Takakura, V. Putcha, E. Simoen, A. R. Alian, U. Peralagu, N. Waldron, B. Parvais, N. Collaert

Semiconductor Science and Technology, 36(2) 024003-024003, Feb, 2020 Peer-reviewedLead author
Puddle Detection for Avoidance Path Planning of Wheeled Mobile Robot Using Laser Reflection Intensity

TAHARA Hirotaka, IKEGAMI Ibuki, TAKAKURA Kenichiro, KATO Tatsuya

The Proceedings of JSME annual Conference on Robotics and Mechatronics (Robomec), 2019 1P1-S05, 2019
Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

Kenta Moto, Shin Sakiyama, Hayato Okamoto, Hideyuki Hara, Hiroto Nishimura, Kenichiro Takakura, Isao Tsunoda

JAPANESE JOURNAL OF APPLIED PHYSICS, 55(4), Apr, 2016 Peer-reviewed
Au induced low-temperature formation of preferentially (111)-oriented crystalline Ge on insulator

Hayato Okamoto, Kohei Kudo, Tatsushi Nomitsu, Ryosuke Mochii, Kenta Moto, Kenichiro Takakura, Isao Tsunoda

Japanese Journal of Applied Physics, 55(4), Apr, 2016 Peer-reviewed
Hole trap distribution on 2MeV electron irradiated high-k dielectrics

高倉健一郎

Journal of Vacuum Science and Technology B, vol.33, 032201 (7pages)., Mar, 2015 Peer-reviewed
Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs

Kenichiro Takakura, Masato Hori, Masashi Yoneoka, Isao Tsunoda, Toshiyuki Nakashima, Eddy Simoen, Cor Claeys

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 12, 12(12) 1405-1408, 2015 Peer-reviewed
Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

Shin Sakiyama, Takahiro Kaneko, Takanobu Ootsubo, Takatsugu Sakai, Kazutoshi Nakashima, Kenta Moto, Masashi Yoneoka, Kenichiro Takakura, Isao Tsunoda

THIN SOLID FILMS, 557 151-154, Apr, 2014 Peer-reviewed
Radiation tolerance of Si-1 (-) C-y(y) source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

Toshiyuki Nakashima, Yuki Asai, Masato Hori, Masashi Yoneoka, Isao Tsunoda, Kenichiro Takakura, Mireia Bargallo Gonzalez, Eddy Simoen, Cor Claeys, Kenji Yoshino

THIN SOLID FILMS, 557 307-310, Apr, 2014 Peer-reviewed

Misc.

326

研究グループ紹介：熊本高等専門学校電子材料・デバイス研究部

高倉健一郎

電気学会論文誌．Ａ, 143(6) NL6_4-NL6_4, Jun 1, 2023
Metal induced lateral crystallization of amorphous Ge on insulating substrate

角田功, 高倉健一郎

電子情報通信学会技術研究報告(Web), 123(8(SDM2023 1-17)), 2023
Solid phase crystallization of amorphous Ge/Mg/SiO₂ stacked structure

森本敦己, 平井杜和, 高細工彩斗, 小嶺龍生, 高倉健一郎, 角田功

応用物理学会春季学術講演会講演予稿集(CD-ROM), 70th, 2023
EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge / SiO₂

森本敦己, 阿部陸斗, 平井杏奈, 平井杜和, 高倉健一郎, 角田功

電子情報通信学会技術研究報告(Web), 122(8(SDM2022 1-13)), 2022
Influence of Mg diffusion on Mg-induced lateral crystallization of amorphous Ge / SiO₂

森本敦己, 阿部陸斗, 平井杏奈, 平井杜和, 高倉健一郎, 角田功

応用物理学会春季学術講演会講演予稿集(CD-ROM), 69th, 2022
Strain Dependent Intrinsic Fermi Level at the Interface of Semiconductors

Matsuda Kazunori, Nakayama Ken'ichi, Tanigawa Kouji, Takakura Kan'ichiro

JSAP Annual Meetings Extended Abstracts, 2021.1 2239-2239, Feb 26, 2021
Low temperature Sn induced lateral crystallization for amorphous Ge on SiO₂

脇島海晴, 郡山大知, 清藤健斗, 笠椋貴, 高倉健一郎, 角田功

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Mg induced lateral crystallization of amorphous Ge on SiO₂

平井杜和, 阿部陸斗, 本田彬, 森本敦己, 高倉健一郎, 角田功

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 82nd, 2021
Evaluation of low temperature Sn induced lateral crystallized GeSn on inslator

Ogawa Daisuke, Takakura Kenichiro, Tsunoda Isao

JSAP Annual Meetings Extended Abstracts, 2019.2 3603-3603, Sep 4, 2019
Evaluation of low temperature GILC for electron irradiated a-Ge on SiO₂

Shimizu Satoshi, Takakura Kenichiro, Tsunoda Isao

JSAP Annual Meetings Extended Abstracts, 2019.2 3601-3601, Sep 4, 2019
Sn誘起成長法を用いた結晶Ge_1-xSn_x(x≧15%)の低温形成

小川大輔, 高倉健一郎, 角田功

応用物理学会九州支部学術講演会講演予稿集(Web), 45, 2019
Au誘起横方向成長により形成した低温結晶化Ge薄膜の結晶性評価

西嶋泰樹, 浜崎健, 草野欽太, 高倉健一郎, 角田功

応用物理学会九州支部学術講演会講演予稿集(Web), 44 47 (WEB ONLY), Dec 8, 2018
Au誘起横方向成長した結晶Ge内のAu濃度評価

濱崎健, 坂井拓也, 角和章, 高倉健一郎, 角田功

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 79th ROMBUNNO.18a‐235‐7-3365, Sep 5, 2018
非晶質Ge/SiO₂のSn誘起横方向低温(≦200°C)固相成長

鹿子木嘉城, 佐藤亮起, 西嶋泰樹, 小川大輔, 高倉健一郎, 角田功

応用物理学会秋季学術講演会講演予稿集(CD-ROM), 79th ROMBUNNO.18a‐235‐6-3364, Sep 5, 2018
ダイヤモンドショットキーPNダイオードの低温動作

高倉健一郎, 登田晃浩, 松木賢斗, 松本翼, 徳田規夫

応用物理学会春季学術講演会講演予稿集(CD-ROM), 65th ROMBUNNO.18p‐F206‐11-1459, Mar 5, 2018
2段階熱処理による結晶Ge/Au/SiO₂積層構造の低温形成

清水昇, 森貴礼, 岡本健人, 坂井拓也, 高倉健一郎, 角田功

応用物理学会春季学術講演会講演予稿集(CD-ROM), 65th ROMBUNNO.20p‐F214‐3-3649, Mar 5, 2018
Four-quadrant silicon and silicon carbide photodiodes for beam position monitor applications: Electrical characterization and electron irradiation effects

J. M. Rafí, G. Pellegrini, P. Godignon, D. Quirion, S. Hidalgo, O. Matilla, A. Fontserè, B. Molas, K. Takakura, I. Tsunoda …

Journal of Instrumentation, 13(1), Jan, 2018
絶縁基板上における非晶質Ge薄膜のSn誘起横方向成長

佐藤亮起, 城土卓巳, 井芹健人, 坂井拓也, 高倉健一郎, 角田功

応用物理学会九州支部学術講演会講演予稿集(Web), 43 83 (WEB ONLY), Dec 1, 2017
非晶質Ge薄膜のAu誘起成長に及ぼすAu結晶性の影響

森貴礼, 岡本健人, 清水昇, 坂井拓也, 高倉健一郎, 角田功

応用物理学会九州支部学術講演会講演予稿集(Web), 43 84 (WEB ONLY), Dec 1, 2017
非晶質Ge薄膜/絶縁基板のAu誘起横方向成長に及ぼすAu膜厚効果

坂井拓也, 草野欽太, 高倉健一郎, 角田功

応用物理学会春季学術講演会講演予稿集(CD-ROM), 64th ROMBUNNO.14p‐318‐4-3504, Mar 1, 2017

Professional Memberships

応用物理学会

Research Projects

データ駆動科学によるシリサイド大型結晶開発と高効率熱光発電セルへの応用

科学研究費助成事業, 基盤研究(B), 日本学術振興会, Apr, 2023 - Mar, 2026

鵜殿治彦, 宇佐美徳隆, 高倉健一郎
原子力発電所等高放射線環境下で動作可能な電子回路の開発

科学研究費助成事業基盤研究(C), 基盤研究(C), 日本学術振興会, Apr, 2019 - Mar, 2022

高倉健一郎
阿蘇の天然資源を用いた低コスト排ガス処理用触媒の開発

産学が連携した研究開発成果の展開研究成果展開事業熊本復興支援(地域産学バリュープログラム), 科学技術振興機構, 2017

高倉健一郎
Fabrication of thin film flexible transistor using gallium oxide

Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B), Grant-in-Aid for Young Scientists (B), Japan Society for the Promotion of Science, Apr, 2013 - Mar, 2016

Takakura Kenichiro
Radiation damage mechanism of advanced semiconductor materials and devices

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, 2005 - 2007

SHIGAKI Kazuasda, OHYAMA Hidenori, HAYAMA Kiyoteru, KUDOU Tomohiro, TAKAKURA Kenichiro
Irradiation temperature dependence of advanced semiconductor devices

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, 2005 - 2007

KUDOU Tomohiro, OHYAMA Hidenori, HAYAMA Kiyoteru, SHIGAKI Kazusada, TETSUYA Hakata, TAKAKURA Kenichiro
酸化ガリウムへのドーピングによる透明電極膜の導電率向上

科学研究費助成事業若手研究(B), 若手研究(B), 日本学術振興会, 2005 - 2007

高倉健一郎
Study on radiation damages of semiconductor devices for high and low temperature

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, 2002 - 2004

SHIGAKI Kazusada, OHYAMA Hidenori, HAYAMA Kiyoteru, KUDOU Tomohiro, HAKATA Tetsuya, TAKAKURA Kenichirou
半導体デバイスの放射線損傷に関する研究

2002
-

Industrial Property Rights

特許第6312134号ゲルマニウム層付き基板の製造方法及びゲルマニウム層付き基板

角田功, 高倉健一郎, 本山慎一, 楠田豊, 古田真浩
特開2018-203546 多孔質機能材料ならびに、その製造方法及び製造装置

高倉健一郎, 樫山由貴, 辻誠, 的場仁志
特開2016-021503 ゲルマニウム層付き基板の製造方法及びゲルマニウム層付き基板

角田功, 高倉健一郎, 本山慎一, 楠田豊, 古田真浩
特開2008-177333 SOIトランジスタの評価方法および評価装置

葉山清輝, 大山英典, 高倉健一郎

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