2016年4月
Efficiency enhancement using a Zn1-XGeX-O thin film as an n-type window layer in Cu2O-based heterojunction solar cells
Applied Physics Express
- ,
- ,
- 巻
- 9
- 号
- 5
- 開始ページ
- 052301-1
- 終了ページ
- 052301-4
- 記述言語
- 英語
- 掲載種別
- 速報，短報，研究ノート等（大学，研究機関紀要）
- 出版者・発行元
- The Japan Society of Applied Physics
Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1-XGeX-O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The optimal value of X in Zn1-XGeX-O thin films prepared by a pulsed laser deposition was found to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.