SHIRAKATA Sho

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Name
SHIRAKATA Sho
Alternative names
SS004391
Affiliation
Ehime University
Section
Graduate School of Science and Engineering, Electrical and Electronic Engineering and Computer Science

Research Areas

 
 

Published Papers

 
Sho Shirakata, Naohisa Happo, Shinya Hosokawa
Physica Status Solidi (A) Applications and Materials Science      Jan 2019
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim X-ray fluorescence holography (XFH) is carried out using a synchrotron radiation on CuInSe 2 and CuGaSe 2 single crystals, which is powerful for the investigation of local atomic structure by th...
Sho Shirakata
Physica Status Solidi (A) Applications and Materials Science      Jan 2019
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim An attempt is made to dope Zn impurity selectively at the In site in Cu(In,Ga)Se 2 (CIGS) by supplying Zn at the first stage of a three-stage method. Increase in carrier concentration in p-type ...
Sho Shirakata, Yuma Kitamura, Naohisa Happo, Shinya Hosokawa, Kouichi Hayashi
Physica Status Solidi (C) Current Topics in Solid State Physics   14    Jun 2017   [Refereed]
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimX-ray Fluorescence Holography (XFH) study of Cu(In,Ga)Se2 single crystals has been performed using an inverse mode. Energies of incident X-ray are from 9.2 to 13.2 keV. The Cu-Kα X-ray fluorescence ...
Sho Shirakata, Sho Shirakata
Physica Status Solidi (C) Current Topics in Solid State Physics   14    Jun 2017   [Refereed]
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimSelective doping of a Zn impurity at the group III site in a Cu(In, Ga)Se2 (CIGS) film was performed by the doping of Zn at the first stage of the three-stage method. The p-type CIGS:Zn film was obt...
Tomoaki Terasako, Junichi Nomoto, Hisao Makino, Naoki Yamamoto, Sho Shirakata, Tetsuya Yamamoto
Thin Solid Films   596 24-28   Dec 2015   [Refereed]
© 2015 Elsevier B.V. All rights reserved.Structural properties of highly c-axis oriented polycrystalline Ga-doped ZnO (GZO) films prepared by ion-plating with a DC arc discharge were studied in terms of the oxygen gas flow rate (FO2) introduced i...
Toshihiko Toyama, Takafumi Konishi, Yuichi Seo, Ryotaro Tsuji, Kengo Terai, Yuto Nakashima, Ryuichiro Maenishi, Akiko Arata, Shinji Yudate, Yasuo Tsutsumi, Sho Shirakata
Japanese Journal of Applied Physics   54 015503   Jan 2015   [Refereed]
© 2015 The Japan Society of Applied PhysicsWe achieved annealing-induced optical-bandgap widening in Cu2ZnSnS4 (CZTS), which is a promising material for use in high-efficiency thin-film solar cells, and we performed synchrotron-radiation X-ray abs...
Toshihiko Toyama, Takafumi Konishi, Ryotaro Tsuji, Ryuichiro Maenishi, Akiko Arata, Shinji Yudate, Sho Shirakata
Physica Status Solidi (C) Current Topics in Solid State Physics   12 721-724   Jan 2015   [Refereed]
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Cu<inf>2</inf>ZnSnS<inf>4</inf> (CZTS) thin-film solar cells are considered promising for terawatt-scale production. It has been established that in the fabrication process of CZTS thin-film solar ...
Sho Shirakata, Akiko Atarashi, Masakazu Yagi
Physica Status Solidi (C) Current Topics in Solid State Physics   12 584-587   Jan 2015   [Refereed]
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.The photo-acoustic spectroscopy (PAS) using a transparent piezoelectric photo-thermal (Tr-PPT) method was carried out on Cu(In,Ga)Se<inf>2</inf> (CIGS) thin films (both CIGS/Mo/SLG and CdS/CIGS/Mo/...
Tomoaki Terasako, Toshihiro Murakami, Atsushi Hyodou, Sho Shirakata
Solar Energy Materials and Solar Cells   132 74-79   Jan 2015   [Refereed]
© 2014 Elsevier B.V.Structural and electrical properties of the CuO films and the ZnO/CuO heterojunctions prepared by chemical bath deposition (CBD) technique involving thermal annealing process were studied by scanning electron microscope observa...
Shinji Yudate, Yuki Koyama, Sho Shirakata
Physica Status Solidi (C) Current Topics in Solid State Physics   12 837-840   Jan 2015   [Refereed]
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.By the compound-source molecular beam epitaxy (CS-MBE), GaN:Eu and AlGaN films grown on both Al<inf>2</inf>O<inf>3</inf>(0001) and GaAs(100) substrates were prepared. Under RHEED observation, strea...
Sho Shirakata
Physica Status Solidi (B) Basic Research   252 1211-1218   Jan 2015   [Refereed][Invited]
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Photoluminescence (PL) has been reviewed for the characterization of Cu(In,Ga)Se<inf>2</inf> (CIGS) solar cells with emphasis on PL intensity and lifetime in the photovoltaic heterojunction, charac...
Tomoaki Terasako, Ken Ohmae, Motohiro Yamane, Sho Shirakata
Thin Solid Films   572 20-27   Dec 2014
© 2014 Elsevier B.V. All rights reserved. Temperature dependent Hall effect measurements were performed for the undoped CdO films with carrier concentrations (n) ranging from 2.4 × 1019 to 2.0 × 1020 cm-3 grown on c- and r-plane sapphire substrate...
Tomoaki Terasako, Ken Ohmae, Motohiro Yamane, Sho Shirakata
Thin Solid Films   572 20-27   Sep 2014   [Refereed]
Temperature dependent Hall effect measurements were performed for the undoped CdO films with carrier concentrations (n) ranging from 2.4 × 1019 to 2.0 × 1020 cm- 3 grown on c- and r-plane sapphire substrates by the atmospheric-pressure chemical va...
Akiko Atarashi, Masakazu Yagi, Sho Shirakata
Japanese Journal of Applied Physics   53    Jan 2014   [Refereed]
Cu(In,Ga)Se2 (CIGS) thin films and solar cells were studied by photoacoustic spectroscopy (PAS) which is non-contact and non-destructive characterization of optical absorption properties. As preliminary experiment, the band gap of CIGS bulk alloy ...
Sho Shirakata, Hiroyuki Ohta, Kouichi Ishihara, Tatsuya Takagi, Akiko Atarashi, Shinji Yudate
Japanese Journal of Applied Physics   53    Jan 2014   [Refereed]
Intensity and decay time of a near-band-edge photoluminescence (PL) of a Cu(In,Ga)Se2 (CIGS) thin film grown on a Mo/soda lime glass (SLG) substrate decreased with air exposure time, showing the degradation of the CIGS film surface. The dependence...
Tomoaki Terasako, Toshihiro Murakami, Masakazu Yagi, Sho Shirakata
Thin Solid Films   549 292-298   Dec 2013   [Refereed]
Zinc oxide (ZnO) nanorods (NRs) were synthesized on glass substrates and Au seed layers by chemical bath deposition from the aqueous solution of ZnCl 2 and the mixed aqueous solution of zinc acetate dihydrate (ZnAc) and hexamethylenetetramine (HMT...
T. Terasako, Y. Ogura, S. Fujimoto, H. Song, H. Makino, M. Yagi, S. Shirakata, T. Yamamoto
Thin Solid Films   549 12-17   Dec 2013   [Refereed]
Ga-doped ZnO (GZO) films with carrier concentrations ranging from 5.2 × 1017 to 2.9 × 1020 cm- 3 were grown on r-plane sapphire substrates by atmospheric-pressure CVD (AP-CVD). The gradients of Hall mobility (μ) - temperature (T) curves (denoted b...
Tomoaki Terasako, Yoshinori Ogura, Shohei Fujimoto, Toshihiro Murakami, Masakazu Yagi, Sho Shirakata
Physica Status Solidi (C) Current Topics in Solid State Physics   10 1580-1583   Nov 2013   [Refereed]
Optical properties of ZnO films and nanorods (NRs) grown by atmospheric-pressure CVD (AP-CVD) and chemical bath deposition (CBD) were studied by photoluminescence (PL), photoluminescence excitation (PLE) and photoacoustic (PA) measurements. Visibl...
Tomoaki Terasako, Yoshinori Ogura, Ken Ohmae, Shohei Fujimoto, Masakazu Yagi, Sho Shirakata
Surface and Coatings Technology   230 245-253   Sep 2013   [Refereed]
Morphological, electrical and optical properties of undoped and Ga-doped ZnO and undoped CdO films grown on sapphire (Al2O3) substrates by the atmospheric-pressure CVD method using Zn, Cd, H2O and GaCl3 as source materials were investigated. The i...
Sho Shirakata, Toshihiro Takahashi, Hiroaki Matsunaga
Physica Status Solidi (C) Current Topics in Solid State Physics   10 1005-1008   Aug 2013   [Refereed]
In Situ ellipsometric study has been carried out during the deposition of the CuInSe2 thin film by means of the three-stage process. A rotator analyzing ellipsomerter using a 632.8 nm He-Ne laser was used. Ellipsometric parameters (Ψ and Δ) and re...
Sho Shirakata
Physica Status Solidi (A) Applications and Materials Science   210 1322-1327   Jul 2013   [Refereed]
A series of studies on photoluminescence (PL) and time-resolved PL in Cu(In,Ga)Se2 (CIGS) solar cells is presented with emphasis on the photovoltaic effect in the ZnO/CdS/CIGS heterostructure. The photovoltage created by an excitation light increa...
T. Terasako, H. Song, H. Makino, S. Shirakata, T. Yamamoto
Thin Solid Films   528 19-25   Jan 2013   [Refereed]
Ga-doped ZnO (GZO) films with carrier concentration n ranging from 3 × 1018 to 1.04 × 1021 cm- 3 were deposited by ion plating with DC arc discharge. The results of Hall effect measurements of the GZO films revealed that the gradients of Hall mobi...
T. Terasako, T. Fujiwara, Y. Nakata, M. Yagi, S. Shirakata
Thin Solid Films   528 237-241   Jan 2013   [Refereed]
Cadmium oxide (CdO) nanostructures of various shapes were successfully grown on gold (Au) nanocolloid coated c-plane sapphire substrates by atmospheric-pressure CVD using Cd powder and H2O as source materials. CdO nanorods (NRs) exhibited tapered ...
Masaki Uchikoshi, Sho Shirakata
Japanese Journal of Applied Physics   51    Dec 2012   [Refereed]
The relationship between the selenization conditions and structural properties of Cu(In,Ga)Se2 (CIGS) thin films was investigated for the selenization method using diethylselenide (DESe). The grain structure changed markedly depending on selenizat...
Sho Shirakata, Hiroyuki Ohta, Naoki Iwado
Japanese Journal of Applied Physics   51    Oct 2012   [Refereed]
Photoluminescence (PL), PL intensity mapping and time-resolved PL (TR-PL) studies have been applied to the Cu(In,Ga)Se 2 (CIGS) solar cell fabrication process. Measurements have been done just after the respective cell process for the preparation ...
Masaki Uchikoshi, Sho Shirakata
Japanese Journal of Applied Physics   51    Oct 2012   [Refereed]
The relationship between the selenization condition and the grain structure has been studied. A single-phase chalcopyrite Cu(In,Ga)Se 2 thin film with densely-packed grains and large grains have been prepared by the two-step selenization of the In...
Tokio Nakada, Sho Shirakata
Solar Energy Materials and Solar Cells   95 1463-1470   Jun 2011   [Refereed]
We have proposed a novel laser-assisted-deposition (LAD) process for improving the crystalline quality of CIGS thin films and cell performance. The influences of laser power, Ga content in CIGS, substrate temperature, and photon energy of laser on...
Sho Shirakata, Shinji Yudate, Jyunji Honda, Naoki Iwado
Japanese Journal of Applied Physics   50    May 2011   [Refereed]
Room-temperature photoluminescence (PL) has been studied in Cu(In,Ga)Se 2 (CIGS) films with emphasis on the near-band-edge PL of CIGS during the solar cell fabrication process. A step-by-step PL spectrum mapping measurement ...
Tomoaki Terasako, Keisuke Taira, Kouta Taniguchi, Masakazu Yagi, Sho Shirakata
Physica Status Solidi (C) Current Topics in Solid State Physics   8 509-511   Feb 2011   [Refereed]
Structural and photoluminescence (PL) properties of ZnO films grown by atmospheric pressure CVD methods using the sources of Zn(C5H7O2)2H2O (ZnAA) -C2H5OH, ZnCl2-C2H5OH and Zn-H2O, were compared. For the ZnAA-C2H5OH system, the influence of the cr...
Tomoaki Terasako, Tetsuro Fujiwara, Masakazu Yagi, Sho Shirakata
Japanese Journal of Applied Physics   50    Jan 2011   [Refereed]
Various shapes of ZnO and CdO nanostructures were successfully grown on a- and c-plane sapphire substrates coated with Au nanocolloidal solution by atmospheric-pressure chemical vapor deposition methods under a simultaneous source supply of metal ...
Sho Shirakata, Tokio Nakada
Solar Energy Materials and Solar Cells   95 219-222   Jan 2011   [Refereed]
Photoluminescence (PL) and PL decay characteristics of the near-band-edge (NBE) PL at room temperature have been studied on the Cu(In,Ga)Se2 (CIGS) solar cells. The carrier recombination process has been discussed with emphasis on the photovoltaic...
Tomoaki Terasako, Takahiro Yamanaka, Shinichiro Yura, Masakazu Yagi, Sho Shirakata
Thin Solid Films   519 1546-1551   Dec 2010
Polycrystalline zinc oxide (ZnO) films were grown on alkali-free glass substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) using diethylzinc (DEZn) and water (H2O) as precursors. Photoluminescence (PL) spectra of the films...
T. Terasako, K. Taniguchi, K. Taira, M. Yagi, S. Shirakata
ECS Transactions   25 199-206   Dec 2009
Photoluminescence spectra of polar ZnO/c-Al2O3 and non-polar ZnO/r-Al2O3 films grown by the atmospheric-pressure CVD using Zn and H2O as source materials have been investigated. For the non-polar films, the I0, I1 and I2 lines on the high energy s...
Keisuke Miyauchi, Takehiro Minemura, Keigo Nakatani, Hisayuki Nakanishi, Mutsumi Sugiyama, Sho Shirakata
Physica Status Solidi (C) Current Topics in Solid State Physics   6 1116-1119   Sep 2009
Photoluminescence (PL) spectra of bulk ZnSnP2 crystals grown by solution growth (SG) and normal freezing (NF) methods are described. The donor-acceptor pair (DAP) transition, which possibly originates from the transition from Sn levels at Zn sites...
Sho Shirakata, Tokio Nakada
Physica Status Solidi (C) Current Topics in Solid State Physics   6 1059-1062   Sep 2009
Photoluminescence (PL) and time-resolved PL (TR-PL) studies have been carried out on Cu(In, Ga)Se2 (CIGS) thin films and solar cells (ZnO/CdS/CIGS) to study the recombination of the photo-excited carriers. The CIGS solar cells exhibited intense ne...
Sho Shirakata, Katsuhiko Ohkubo, Yasuyuki Ishii, Tokio Nakada
Solar Energy Materials and Solar Cells   93 988-992   Jun 2009
Photoluminescence (PL) have been studied on Cu(In,Ga)Se2 (CIGS) thin films, CdS/CIGS and CIGS solar cells, to clarify the carrier recombination process. The chemical-bath deposition (CBD) of the CdS buffer layer on the CIGS thin film leads to (i) ...
Tomoaki Terasako, Daisuke Saito, Keisuke Taira, Atsushi Nishinaka, Tomoya Yamaguchi, Sho Shirakata
e-Journal of Surface Science and Nanotechnology   7 78-83   Jan 2009
A variety of vertically aligned ZnO nanostrutures, such as nanorods, pencil-like nanorods and nanowalls, was successfully grown on sapphire substrates coated with Au nanocolloidal solutions by atmospheric-pressure CVD using Zn powder and H2O as so...
Tomoaki Terasako, Yosuke Shigematsu, Masanori Hiji, Tomoya Yamaguchi, Sho Shirakata
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics   27 1646-1651   Jan 2009
Films of ZnO have been grown on R -plane sapphire substrates by atmospheric-pressure chemical vapor deposition (AP-CVD) using Zn powder and H2 O as source materials. Variation in growth rate as a function of substrate temperature can be divided in...
Tomoaki Terasako, Shinichiro Yura, Suguru Azuma, Satoshi Shimomura, Sho Shirakata, Masakazu Yagi
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics   27 1609-1614   Jan 2009
Polycrystalline zinc oxide films were grown on glass substrates by low pressure metal organic chemical vapor deposition (LP-MOCVD) and metal organic molecular beam deposition (MOMBD) using diethlyzinc and water as precursors. With increasing subst...
S. Yudate, T. Fujii, S. Shirakata
Thin Solid Films   517 1453-1456   Dec 2008
Films of Eu-doped GaN (GaN:Eu) were grown on c-plane of sapphire (c-Al2O3), GaAs(1 0 0), Si(1 0 0) and glass substrates by RF magnetron sputtering method. The X-ray diffraction (XRD) measurement of the sputtered film was carried out. For GaN:Eu an...
Tokio Nakada, Yasuyuki Ishii, Junya Hirata, Takeshi Yagioka, Sho Shirakata, Takahiro Mise
Conference Record of the IEEE Photovoltaic Specialists Conference      Dec 2008
We have developed a Laser-Assisted Deposition (LAD) process for improving the crystalline quality of CIGS thin films and cell performance. The V OC, FF and conversion efficiency improved by the LAD process for all CIGS devices with different Ga co...
Keigo Nakatani, Takehiro Minemura, Keisuke Miyauchi, Kenji Fukabori, Hisayuki Nakanishi, Mutsumi Sugiyama, Sho Shirakata
Japanese Journal of Applied Physics   47 5342-5344   Jul 2008
The photoluminescence (PL) spectra of the bulk ZnSnP2 crystals grown by the solution growth (SG) and normal freezing (NF) methods are studied. The donor-acceptor pair transition, which possibly originates from the transition from the levels of Sn ...
Sho Shirakata, Shinji Yudate
Physica Status Solidi (A) Applications and Materials Science   205 75-79   Jan 2008
The red-luminescent Eu-doped GaN film has been prepared on both sapphire and GaN/sapphire substrates by the conventional RF magnetron sputtering method using a compound powder target (GaN+ EuN), N 2 sputtering gas and subse...
T. Terasako, M. Yagi, M. Ishizaki, Y. Senda, H. Matsuura, S. Shirakata
Thin Solid Films   516 159-164   Dec 2007
Zinc oxide (ZnO) films grown by atmospheric-pressure chemical vapor deposition using Zn powder and water (H2O) as source materials were investigated by photoluminescence (PL), photoacoustic (PA), Raman scattering, infrared (IR) absorption and atte...
Sho Shirakata, Tokio Nakada
Materials Research Society Symposium Proceedings   1012 235-240   Dec 2007
Time-resolved photoluminescence (TR-PL) measurements have been carried out on Cu(In1-x,Gax)Se2 (CIGS) thin films and solar cells to study the recombination of photo-generated minority carriers. Room temperature photoluminescence (PL) of both CIGS ...
T. Terasako, M. Yagi, M. Ishizaki, Y. Senda, H. Matsuura, S. Shirakata
Surface and Coatings Technology   201 8924-8930   Sep 2007
Highly oriented ZnO films have been grown on c-plane sapphire substrate by atmospheric-pressure chemical vapor deposition using Zn powder and H2O as source materials. Photoluminescence intensity ratio of the green band at ∼ 2.5 eV to the near-band...
Tomoaki Terasako, Seiki Inoue, Tetsuya Kariya, Sho Shirakata
Solar Energy Materials and Solar Cells   91 1152-1159   Jul 2007
Structural, optical and electrical properties of polycrystalline Cu-In-Se films, such as CuInSe2 and ordered vacancy compounds (OVC), prepared by three-stage process of sequential chemical spray pyrolysis (CSP) of In-Se (first stage), Cu-Se (secon...
Sho Shirakata, Tokio Nakada
Thin Solid Films   515 6151-6154   May 2007
Room temperature time-resolved photoluminescence (TR-PL) measurements have been performed on Cu(In,Ga)Se2 (CIGS) thin films and solar cells to clarify the recombination process of the photo-generated minority carrier. Both films and solar cells ex...
Tomoaki Terasako, Yousuke Ishiko, Keisuke Saeki, Shinji Yudate, Sho Shirakata
Journal of Crystal Growth   298 481-485   Jan 2007
Growth of ZnO films was carried out on the c-plane sapphire (α-Al2O3 (0 0 0 1)) and glass substrates by metalorganic molecular beam epitaxy (MOMBE) using diethylzinc (DEZn) and H2O as source precursors. The lattice constant c of the ZnO/α-Al2O3 (0...
Tetsuya Yamamoto, Takahiro Yamada, Toshiyuki Sakemi, Sho Shirakata, Minoru Osada, Seiichi Kishimoto, Kiyoshi Awai, Hisao Makino, Tooru Mitsunaga
Ceramic Transactions   196 475-489   Dec 2006
The advantageous features of polycrystalline gallium (Ga)-doped ZnO (GZO) films, being cost-effective and easy to fabricate on a production scale, make them very attractive potential for use in transparent conductive electrode in flat display pane...
Tomoaki Terasako, Yuji Uno, Seiki Inoue, Tetsuya Kariya, Sho Shirakata
Physica Status Solidi (C) Current Topics in Solid State Physics   3 2588-2591   Oct 2006
Polycrystalline CuInS2 thin films were prepared by chemical spray pyrolisis (CSP) on glass sustrate from the ethanol aqueous solution containing CuCl2, InCl3 and thiourea. Structual, electrical and optical properties were systematically studied in...
Tomoaki Terasako, Masakazu Yagi, Tetsuya Kariya, Sho Shirakata
Physica Status Solidi (C) Current Topics in Solid State Physics   3 2677-2680   Oct 2006
Polycrystalline MgxZn1-xO (0.00 ≤ x ≤ 0.21) and ZnO:Mn films prepared by chemical spray pyrolysis were characterized by X-ray diffraction, optical transmittance, photoacoustic (PA) spectroscopy and photoluminescence (PL). Successful growth of the ...
Sho Shirakata, Hideto Miyake
Physica Status Solidi (A) Applications and Materials Science   203 2897-2903   Sep 2006
Temperature dependences of photoreflectance (PR), photoluminescence (PL), and time-resolved PL have been determined for bulk CuInSe 2 single crystals grown by a travelling heater method. The PR spectra exhibited excitonic AB (1.04 eV) and C (1.27 ...
Sho Shirakata, Masahiko Kondow, Masahiko Kondow, Takeshi Kitatani
Physica Status Solidi (A) Applications and Materials Science   203 2680-2685   Sep 2006
Spectroscopic studies have been carried out on the quantum levels in GaInNAs/GaAs single quantum wells (SQWs). Photoluminescence (PL), PL excitation (PLE), photoreflectance (PR), and high-density-excited PL (HDE-PL) were measured on high quality G...
Shinji Yudate, Ryo Sasaki, Takashi Kataoka, Sho Shirakata
Optical Materials   28 742-745   May 2006
The Eu-doped GaN thin films (GaN:Eu) were deposited on the c plane of sapphire substrate by the radio frequency magnetron sputtering method. As a target, the GaN compound powder target was used, which contains small amount of EuN powder of 1, 2 an...
Tomoaki Terasako, Yuji Uno, Tetsuya Kariya, Sho Shirakata
Solar Energy Materials and Solar Cells   90 262-275   Feb 2006
Structural and optical properties of In-rich Cu-In-Se polycrystalline thin films (0.54<In/(Cu+In)<0.78) prepared by chemical spray pyrolysis (CSP) on glass substrate have been systematically studied in terms of In/(Cu+In) ratio. Lattice constants ...
K. Sakai, T. Kakeno, T. Ikari, S. Shirakata, T. Sakemi, K. Awai, T. Yamamoto
Journal of Applied Physics   99    Feb 2006
Undoped and Ga-doped (3 wt %) n -type ZnO thin films were grown by a reactive plasma deposition method on glass substrates at 200 °C under an oxygen flow rate from 0 to 50 SCCM. In this paper, we report on the defect and band edge related signals ...
S. Shirakata, T. Sakemi, K. Awai, T. Yamamoto
Superlattices and Microstructures   39 218-228   Jan 2006
Measurements of Hall effect, optical transmittance, reflectance and photoluminescence (PL) have been carried out on large area (1 m wide) polycrystalline Ga-doped ZnO (GZO) films prepared by a reactive plasma deposition (RPD) method using two plas...
Tomoaki Terasako, Sho Shirakata
Japanese Journal of Applied Physics, Part 2: Letters   44    Nov 2005
Single crystalline ZnO nanowires (NWs) with diameters ranging from 80 to 700 nm were successfully grown on Ni-coated SiO2/Si(100) substrates by atmospheric pressure chemical vapor deposition (CVD) using ZnCL2 and H2O as source materials. Scanning ...
Sho Shirakata, Masahiko Kondow, Masahiko Kondow, Takeshi Kitatani
Journal of Physics and Chemistry of Solids   66 2119-2122   Nov 2005
Polarized Raman spectra have been studied on the lattice-matched Ga 0.94In0.06N0.025As0.975 epitaxial layers grown on (100) GaAs by molecular beam epitaxy. Polarization dependence of TO and LO phonon modes has been examined. The N-related local vi...
Sho Shirakata, Tomoaki Terasako, Tetsuya Kariya
Journal of Physics and Chemistry of Solids   66 1970-1973   Nov 2005
CuIn(SxSe1-x)2 thin polycrystalline films were grown by the chemical spray pyrolysis method on the glass substrate at 280-400°C. The alloy composition in the film was studied with relation to that in the splay solution. Films were characterized by...
T. Yamamoto, T. Mitsunaga, M. Osada, K. Ikeda, S. Kishimoto, K. Awai, H. Makino, T. Yamada, T. Sakemi, S. Shirakata
Superlattices and Microstructures   38 369-376   Oct 2005
The dependences of lattice constant, crystallite size and internal strain in the (100) direction for Ga-doped ZnO (GZO; Ga content, 3 wt%) films on O 2 gas flow rate (0-20 sccm) during deposition were investigated. GZO films have been prepared by ...
Yasushi Takano, Kazu Kobayashi, Hideaki Iwahori, Masayoshi Umezawa, Sho Shirakata, Shunro Fuke
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 6403-6411   Sep 2005
InGaAs layers with In composition between 0.50 and 0.57 were grown on GaAs substrates with graded buffer layers at temperatures between 370 and 470°C by metalorganic vapor phase epitaxy. Periodic structure resulting from phase separation was obser...
Y. Takano, K. Kobayashi, S. Shirakata, M. Umezawa, S. Fuke
Journal of Crystal Growth   282 36-44   Aug 2005
In0.2Ga0.8As layers were grown on GaAs substrates with graded buffer layers by metalorganic vapor phase epitaxy at 370-630°C. Good surface morphology with a crosshatch pattern (CHP) was obtained at 600 and 630°C. Transmission electron microscopy (...
Sho Shirakata, Masahiko Kondow, Masahiko Kondow, Takeshi Kitatani
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 4019-4021   Jun 2005
Raman studies were performed on GaN0.025As0.975 and Ga0.94In0.06N0.025As0.975 epilayers grown on (100) GaAs. N alloying enhanced the forbidden TO phonon, while In alloying had a negligible effect on it. The forbidden TO phonon had an A 1 symmetry,...
K. Iwata, T. Sakemi, A. Yamada, P. Fons, K. Awai, T. Yamamoto, S. Shirakata, K. Matsubara, H. Tampo, K. Sakurai, S. Ishizuka, S. Niki
Thin Solid Films   480-481 199-203   Jun 2005
Reactive plasma deposition (RPD) is a technique for depositing a thin film on a substrate using a pressure-slope type plasma ion gun. This method offers the advantage of low-ion damage, low deposition temperature, large area deposition and high gr...
Tomoaki Terasako, Sho Shirakata
Japanese Journal of Applied Physics, Part 2: Letters   43    Oct 2004
Multiwalled carbon nanotube (MWNT) films were grown on nickel-coated SiO2/Si substrates by atmospheric pressure chemical vapor deposition (CVD) using ethanol and nitrogen as a source material and a carrier gas, respectively. It is revealed that th...
Sho Shirakata, Ryo Sasaki, Takashi Kataoka
Applied Physics Letters   85 2247-2249   Sep 2004
The photoluminescence of GaN films doped in Eu and prepared by radio frequency magnetron sputtering were analyzed. It was observed that the annealing in NH 3 led to the remarkable enhancement of Eu-related PL lines although ...
Masahiko Kondow, Takeshi Kitatani, Sho Shirakata
Journal of Physics Condensed Matter   16    Aug 2004
The effect of post-growth thermal annealing on crystallinity and bandgap in GaInNAs systems is systematically investigated. Annealing greatly improves the crystallinity of GaInNAs and also blue shifts the bandgap. This improved crystallinity is du...
Yasushi Takano, Masayoshi Umezawa, Sho Shirakata, Shunro Fuke
Japanese Journal of Applied Physics, Part 2: Letters   43    Jul 2004
InAs layers were grown on GaAs substrates by metalorganic vapor phase epitaxy using InGaAs graded buffer layers and two-step growth. Layer quality was investigated by transmission electron microscopy. The threading dislocation density in InAs grow...
T. Yamamoto, T. Sakemi, K. Awai, S. Shirakata
Thin Solid Films   451-452 439-442   Mar 2004
Transparent and conductive Ga-doped ZnO films have been deposited at a glass substrate temperature of 200 °C using an ion plating system. The resistivity as low as 2.7×10-4 Ωcm with a high carrier concentration of 8×1020 cm-3, Hall mobility of 27 ...
S. Shirakata, T. Sakemi, K. Awai, T. Yamamoto
Thin Solid Films   451-452 212-218   Mar 2004
Optical and electrical properties have been studied on thin polycrystalline ZnO films deposited on a glass substrate by Uramoto-Tanaka type ion plating (DC-arc ion-plating) method with relation to the oxygen flow rate (OFR) in the deposition chamb...
Tetsuya Yamamoto, Toshiyuki Sakemi, Kiyoshi Awai, Sho Shirakata
Shinku/Journal of the Vacuum Society of Japan   47 742-747   Jan 2004
S. Shirakata, T. Sakemi, K. Awai, T. Yamamoto
Thin Solid Films   445 278-283   Dec 2003
Optical and electrical properties were studied on thin polycrystalline ZnO films (200-nm thick) deposited on glass substrates at 200 °C by a DC-arc ion plating method (URamoto-Tanaka-type ion plating method). Effects of the oxygen flow rate (OFR) ...
T. Sakemi, S. Shirakata, K. Iwata, K. Matsubara, H. Tampo, P. Fons, S. Niki, K. Awai, T. Yamamoto
Materials Research Society Symposium - Proceedings   763 301-306   Dec 2003
A novel ion plating technique that has the attributes of both superb controllability of the high density plasma used as well as ion beam shape has been developed and applied to the deposition of transparent conducting oxides. The advantages of thi...
Sho Shirakata, Hideto Miyake
Journal of Physics and Chemistry of Solids   64 2021-2024   Sep 2003
Temperature dependence of photoreflectance (PR) measurements has been carried out on the high-quality CuInS2 single crystals grown by traveling heater method. Energies and broadening parameters of the A and BC excitons associated with the valence ...
Sho Shirakata, Tomoaki Terasako, Eiji Niwa, Katashi Masumoto
Journal of Physics and Chemistry of Solids   64 1801-1805   Sep 2003
Photoluminescence (PL) related to rare-earth (RE) impurities (Ho, Er and Eu) in AgGaS2 and CuGaS2 crystals has been studied. In Ho-doped AgGaS2 and CuGaS2, two series of PL lines are observed in 1.86-1.92 eV region and 2.24 eV region, and they are...
Sho Shirakata, Masahiko Kondow, Takeshi Kitatani
Journal of Physics and Chemistry of Solids   64 1533-1537   Sep 2003
Optical properties of GaInNAs are studied with emphasis on photoluminescence (PL) and photoreflectance (PR) using GaInNAs single quantum wells (GaInNAs-SQW) and thick GaInNAs layers lattice-matched to GaAs (LM-GaInNAs) grown by solid-source molecu...
Masahiko Kondow, Takeshi Kitatani, Sho Shirakata
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 4286-4287   Jul 2003
Infrared (IR) absorption spectra of Ga1-xInxNyAs1-y (x = 7 ± 2%, y = 2 ± 0.5%), which is nearly lattice-matched to a GaAs substrate, were measured by IR absorption spectroscopy. A peak at 407 cm-1 was observed beside the peak at 470 cm-1, which is...
M. Kondow, S. Fujisaki, S. Shirakata, T. Ikari, T. Kitatani
IEEE International Symposium on Compound Semiconductors, Proceedings   2003-January 76-77   Jan 2003
© 2003 IEEE. The electron effective mass of GaInNAs is important to design excellent long-wavelength lasers on GaAs. However, it remains still unestablished. We find that it is 0.08±0.1 m0almost independent of nitrogen content from 0.3 to 1.5%.
M. Kondow, S. Fujisaki, T. Kitatani, S. Shirakata, T. Ikari
IEEE International Symposium on Compound Semiconductors, Proceedings   2003-August 84-89   Jan 2003
© 2004 IEEE. The electron effective mass of GaInNAs is an important parameter for designing excellent long-wavelength lasers on GaAs. However, it has not yet been established. We find that it is 0.08±0.1 m0(m0: mass of free electron) almost indepe...
Tomoaki Terasako, Sho Shirakata, Tetsuya Kariya
Thin Solid Films   420-421 13-18   Dec 2002
Highly c-axis oriented polycrystalline MgxZn1-xO (x < 0.20) thin films were prepared by chemical spray pyrolysis. It is found that the optical gap energy of the zinc oxide (ZnO) films is affected not only by the Burstein-Moss band-filling effect, ...
Sho Shirakata, Hideto Miyake
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   41 77-78   Jul 2002
The photoreflectance (PR) measurements carried out at 77 K on single crystals of CuAlxIn1-xSe2, grown by the chemical vapor transport method, were discussed. The energies of excitons associated with uppermost valence bands were determined as a fun...
Sho Shirakata, Sho Shirakata, Masahiko Kondow, Takeshi Kitatani
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   41 2082-2083   Apr 2002
Excitation intensity dependence of photoluminescence (PL) was measured at 8 K on a 10 nm GaInNAs single quantum well (SQW) prepared by molecular beam epitaxy and the results are compared with that of the GaInAs SQW. The increase of excitation inte...
Sho Shirakata, Keisuke Saeki, Tomoaki Terasako
Journal of Crystal Growth   237-239 528-532   Apr 2002
Metalorganic molecular beam epitaxy (MOMBE) growth of ZnO was carried out on the c-plane of sapphire substrate using diethylzinc (DEZn) and H2O as source precursors. ZnO layers were grown at substrate temperature (Ts) between 200°C and 550°C. The ...
Sho Shirakata, Masahiko Kondow, Takeshi Kitatani
Applied Physics Letters   80 2087-2089   Mar 2002
Temperature dependence of the near-bandedge photoluminescence (PL) was studied on a 10-nm Ga0.68In0.32N0.01As 0.99/GaAs single quantum well (SQW) prepared by molecular-beam epitaxy for both the as-grown and the rapid-thermal-annealed (RTA) samples...
Y. Takano, K. Kobayashi, H. Iwahori, N. Kuroyanagi, K. Kuwahara, S. Fuke, S. Shirakata
Applied Physics Letters   80 2054-2056   Mar 2002
InGaAs layers with In composition of 0.57 were grown with metalorganic vapor phase epitaxy (MOVPE) using graded buffer layers on exactly oriented and misoriented GaAs(100) substrates. No mirror-like surface was obtained at growth temperatures betw...
Y. Takano, M. Masuda, K. Kobayashi, K. Kuwahara, S. Fuke, S. Shirakata
Journal of Crystal Growth   236 31-36   Mar 2002
In0.35Ga0.65As layers were grown on GaAs(100) substrates by metal-organic vapor phase epitaxy using graded buffer layers. GaAs(100) substrates misoriented toward (111)A and (111)B and exactly oriented GaAs(100) substrates were used. Surface morpho...
Sho Shirakata, Masahiko Kondow, Takeshi Kitatani
Applied Physics Letters   79 54-56   Jul 2001
The temperature dependence of photoluminescence (PL) and photoreflectance (PR) was studied on a 10 nm GaInNAs/GaAs single quantum well prepared by molecular-beam epitaxy using a solid As source. PL was dominated by the near-band edge PL peak with ...
Kenji Yoshino, Tetsuo Ikari, Sho Shirakata, Hideto Miyake, Kazumasa Hiramatsu
Applied Physics Letters   78 742-744   Feb 2001
Temperature-dependent photoluminescence measurements were carried out between 8 and 300 K on CuInS2 single crystals grown by a traveling heater method. Ten distinct peaks were present in the near-band edge region. Four unknown peaks, observed at 8...
Sho Shirakata, Shigefusa Chichibu, Hideto Miyake, Kohichi Sugiyama
Journal of Applied Physics   87 7294-7302   May 2000
Photoluminescence (PL) study has been performed on epitaxial layers of CuGaSe2 and CuAlSe2 grown by metaiorganic chemical vapor epitaxy on CuGa0.96In0.04Se2 substrates prepared by the traveling heater method. PL properties of epilayers are compare...
T. Terasako, K. Hashimoto, Y. Nomoto, S. Shirakata, S. Isomura, E. Niwa, K. Masumoto
Journal of Luminescence   87 1056-1058   May 2000
Doping of Ho into AgGaS2 has been carried out by the thermal diffusion of Ho element into the undoped crystal. Sharp photoluminescence (PL) lines related to the 5S2 → 5I8 and 5F3 → 5I7 transitions in the Ho3+ ion are observed in the energy regions...
Sho Shirakata, Shigefusa Chichibu
Journal of Applied Physics   87 3793-3799   Apr 2000
High quality epitaxial layers of CuGaS2 have been grown on GaAs and GaP substrates by low-pressure metalorganic vapor phase epitaxy using cycropentadienylcoppertriethylphosphine, normal-tripropylgallium, and ditertiallybutyl sulphide precursors. P...
K. Tanaka, H. Uchiki, S. Iida, T. Terasako, S. Shirakata
Solid State Communications   114 197-201   Mar 2000
New photoluminescence from CuGaS2 appeared at the lower energy side of the free exciton luminescence under high excitation. The time-resolved spectrum of this luminescence at 0-20 ps after the excitation fits quite well with the calculated spectru...
Sho Shirakata, Yoshiaki Kannaka, Harufumi Hasegawa, Tetsuya Kariya, Shigehiro Isomura
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   38 4997-5002   Dec 1999
Thin polycrystalline films of Cu(In,Ga)Se2 alloy with the single-phase chalcopyrite structure were successfully grown by the chemical spray pyrolysis (CSP) method on a glass substrate at 360 and 400°C. Alloy composition in the film was well contro...
Tomoaki Terasako, Sho Shirakata, Shigehiro Isomura
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   38 4656-4660   Aug 1999
Photoacoustic (PA) spectra of CuInSe2 thin films prepared by chemical spray pyrolysis have been measured and compared with the Raman and X-ray diffraction results. Stoichiometric films having a sphalerite structure exhibit a PA band at ∼0.95 eV, w...
刈谷哲也, 白方祥, 磯村滋宏
X線分析の進歩   30 91-98   Mar 1999
Sho Shirakata
Journal of Applied Physics   85 3294-3300   Mar 1999
Polarized Raman spectra in ZnGeP2 crystal have been measured. The symmetry of vibrations has been assigned for every mode but one. The angular dispersion of the extraordinary phonon has been measured, and the result is described by the Loudon-Poul...
Tomoaki Terasako, Hiroshi Umiji, Kunihiko Tanaka, Sho Shirakata, Hisao Uchiki, Shigehiro Isomura
Japanese Journal of Applied Physics, Part 2: Letters   38    Jan 1999
Time-resolved photoluminescence (PL) measurements have been carried out for CuGaS2 single crystals with a slightly Cu-rich composition grown by an iodine transport method. PL lines at 2.460 eV, 2.457 eV, 2.417 eV, 2.404 eV, 2.397 eV and 2.295 eV e...
Sho Shirakata, Shinji Yudate, Tomoaki Terasako, Shigehiro Isomura
Japanese Journal of Applied Physics, Part 2: Letters   37    Sep 1998
The metalorganic molecular beam epitaxial growth of CuInSe2 layers on a GaAs(100) substrate was performed at 550°C using cyclopentadienylcoppertriethylphosphine (CpCuTEP), triethylindium and selenium as source precursors. CuInSe2 layers with a fla...

Misc

 
寺迫智昭, 村上聡宏, 兵頭篤, 白方祥
電子情報通信学会技術研究報告   114(95(CPM2014 28-42)) 61-66   Jun 2014
Electrical properties of n-ZnO/p-CuO heterojunctions prepared by chemical bath deposition were investigated. The insertion of intermediate layer, such as ZnO layer grown by dip-coating, was found to be effective for suppressing leakage current. Fo...
寺迫智昭, 野本淳一, 牧野久雄, 矢木正和, 白方祥, 山本哲也
電子情報通信学会技術研究報告   115(250(CPM2015 76-82)) 1-4   Oct 2015
NOMURA Takatoshi, SHIMOMURA Satoshi, FUKUZAWA Tadashi, SHIRAKATA Sho, KONDO Hisao
Technical report of IEICE. LQE   114(46) 61-64   May 2014
Multi quantum wells (MQWs) of AlGaAs/AlAs were grown on (100) GaAs substrates and 23.8° off (100) GaAs substrates towards (111) by molecular beam epitaxy. In the system, X-point electrons are confined in AlAs layers and Γ-point holes are confined ...
TERASAKO Tomoaki, MURAKAMI Toshihiro, HYOUDOU Atsushi, SHIRAKATA Sho
IEICE technical report. EMD   114(94) 61-66   Jun 2014
Electrical properties of n-ZnO/p-CuO heterojunctions prepared by chemical bath deposition were investigated. The insertion of intermediate layer, such as ZnO layer grown by dip-coating, was found to be effective for suppressing leakage current. Fo...
TERASAKO Tomoaki, MURAKAMI Toshihiro, HYOUDOU Atsushi, SHIRAKATA Sho
Technical report of IEICE. OME   114(96) 61-66   Jun 2014
Electrical properties of n-ZnO/p-CuO heterojunctions prepared by chemical bath deposition were investigated. The insertion of intermediate layer, such as ZnO layer grown by dip-coating, was found to be effective for suppressing leakage current. Fo...
SHIRAKATA Sho
Journal of Smart Processing   2(5) 230-235   Sep 2013
TERASAKO Tomoaki, MURAKAMI Toshihiro, KITAMINE Masayuki, YAGI Masakazu, SHIRAKATA Sho
Technical report of IEICE. OME   113(98) 77-82   Jun 2013
Heterostructures of CuO/ZnO synthesized on the Au seed layers from the aqueous solution of ZnCl_2 and that of CuCl showed aggregates of CuO nanorods (NRs) covering the volcano-like ZnO NRs. Both the CuO/ZnO superstrate and ZnO/CuO substrate struct...
TERASAKO Tomoaki, MURAKAMI Toshihiro, KITAMINE Masayuki, YAGI Masakazu, SHIRAKATA Sho
IEICE technical report. Component parts and materials   113(97) 77-82   Jun 2013
Heterostructures of CuO/ZnO synthesized on the Au seed layers from the aqueous solution of ZnCl_2 and that of CuCl showed aggregates of CuO nanorods (NRs) covering the volcano-like ZnO NRs. Both the CuO/ZnO superstrate and ZnO/CuO substrate struct...
TERASAKO Tomoaki, MURAKAMI Toshihiro, KITAMINE Masayuki, YAGI Masakazu, SHIRAKATA Sho
IEICE technical report. EMD   113(96) 77-82   Jun 2013
Heterostructures of CuO/ZnO synthesized on the Au seed layers from the aqueous solution of ZnCl_2 and that of CuCl showed aggregates of CuO nanorods (NRs) covering the volcano-like ZnO NRs. Both the CuO/ZnO superstrate and ZnO/CuO substrate struct...
野村貴俊, 下村哲, 福澤董, 白方祥, 近藤久雄
電子情報通信学会技術研究報告   114(46(LQE2014 1-16)) 61-64   May 2014
TERASAKO Tomoaki, MURAKAMI Toshihiro, YAGI Masakazu, SHIRAKAT Sho
IEICE technical report. Component parts and materials   112(96) 23-28   Jun 2012
Zinc oxide (ZnO) NRs were successfully grown by the chemical bath deposition (CBD) using ZnCl_2 aqueous solution. The shapes of the vertically aligned NRs on the gold (Au) seed layers changed from cones to hexagonal prisms with increasing ZnCl_2 c...
TERASAKO Tomoaki, FUJIWARA Tetsuro, TAKEGAWA Kohei, SHIRAKATA Sho
IEICE technical report   111(109) 5-10   Jun 2011
Various shapes of nanostructures of oxide materials ZnO, CdO and MgO have been obtained by atmospheric-pressure chemical vapor deposition methods using Au nanocolloids as catalyst. Shapes of ZnO and CdO nanorods (NRs) changed from cylinders to con...
TERASAKO Tomoaki, FUJIWARA Tetsuro, TAKEGAWA Kohei, SHIRAKATA Sho
IEICE technical report   111(108) 5-10   Jun 2011
Various shapes of nanostructures of oxide materials ZnO, CdO and MgO have been obtained by atmospheric-pressure chemical vapor deposition methods using Au nanocolloids as catalyst. Shapes of ZnO and CdO nanorods (NRs) changed from cylinders to con...
TERASAKO Tomoaki, UNO Yuji, MIYATA Akira, KATAOKA Tomomi, YAGI Masakazu, KARIYA Tetsuya, SHIRAKATA Sho
Annual journal of engineering, Ehime University   5 17-28   Mar 2006
Structural and optical properties of polycrystalline In-rich Cu-In-Se (0.55<In/(Cu+In)<0.85) and MgxZn1-xO (x<0.20) films prepared by chemical spray pyrolysis (CSP) were investigated. Raman spectra of In-rich Cu-In-Se films exhibited a characteris...
YAMAMOTO Tetsuya, SAKEMI Toshiyuki, AWAI Kiyoshi, SHIRAKATA Sho
Shinku   47(10) 742-747   Oct 2004
TOMIYOSHI Shoichi, FUJIIE Hisasda, AMANO Satoshi, HARADA Kunihito, SHIRAKATA Sho, NISHIHARA Yoshiaki
Annual journal of engineering, Ehime University   5 56-64   Mar 2006
Proton and 3He irradiation in Si-wefer is recently used to improve the efficiency of power transistors by controlling a carrier life-time. Due to Bragg effects the radiation defects locate in a narrow region from the surface in a Si-wafer. Until n...
寺迫智昭, 藤原哲郎, 竹川晃平, 白方祥
電子情報通信学会技術研究報告   111(110(OME2011 22-33)) 5-10   Jun 2011
Various shapes of nanostructures of oxide materials ZnO, CdO and MgO have been obtained by atmospheric-pressure chemical vapor deposition methods using Au nanocolloids as catalyst. Shapes of ZnO and CdO nanorods (NRs) changed from cylinders to con...
TERASAKO Tomoaki, MURAKAMI Toshihiro, YAGI Masakazu, SHIRAKAT Sho
Technical report of IEICE. OME   112(97) 23-28   Jun 2012
Zinc oxide (ZnO) NRs were successfully grown by the chemical bath deposition (CBD) using ZnCl_2 aqueous solution. The shapes of the vertically aligned NRs on the gold (Au) seed layers changed from cones to hexagonal prisms with increasing ZnCl_2 c...
寺迫智昭, 村上聡宏, 矢木正和, 白方祥
電子情報通信学会技術研究報告   112(97(OME2012 32-39)) 23-28   Jun 2012
Zinc oxide (ZnO) NRs were successfully grown by the chemical bath deposition (CBD) using ZnCl_2 aqueous solution. The shapes of the vertically aligned NRs on the gold (Au) seed layers changed from cones to hexagonal prisms with increasing ZnCl_2 c...
白方祥
スマートプロセス学会誌   2(5) 230-235   Sep 2013   [Refereed]
白方祥, 酒見俊之
愛媛大学社会連携推進機構研究成果報告書   (4) 31-37   Mar 2011
SHIRAKATA Sho
Annual journal of engineering, Ehime University   3 35-42   Mar 2004
The GaInNAs alloy semiconductor is a new semiconductor material expected for the realization of the temperature-stable semiconductor laser diode with high characteristic temperature for the optical communication (both 1.3 and 1.55μm). Optical prop...
白方祥
マツダ財団研究報告書(科学技術振興関係)   11 145-151   Apr 1999
Sho Shirakata, Shigehiro Isomura
Memoirs of the Faculty of Engineering, Ehime University   16 69-82   Feb 1997
Sho Shirakata, Shigenori Matsushima, Shigehiro Isomura, Masanori Kohyama
Memoirs of the Faculty of Engineering, Ehime University   16 83-100   Feb 1997
松嶋茂憲, 原口俊秀, 小林健吉郎, 白方祥, 香山正憲
北九州工業高等専門学校研究報告   (30) 101-105   Jan 1997
白方祥, 近藤正彦, 都志彰人, 白銀隆之, 西野種夫, 浜川圭弘
電子通信学会技術研究報告   84(312) 17-24(SSD84-164)   Mar 1985
喜多靖, 戸波与之, 白方祥, 西野種夫, 浜川圭弘
電子情報通信学会技術研究報告   86(365) 9-14(SSD86-158)   Mar 1987
白方祥, 白川二, 中井順吉
電子通信学会技術研究報告   81(250) 93-100(SSD81-112)   Feb 1982
近藤正彦, 白方祥, 都志彰人, 西野種夫, 浜川圭弘
電子通信学会技術研究報告   84(186) 59-66(ED84-105)   Nov 1984

Conference Activities & Talks

 
後藤祐真, 和田直樹, 白方祥, 塩貝一樹, 川人直也
電気関係学会四国支部連合大会講演論文集(CD-ROM)   15 Sep 2018   
白方祥, 八方直久, 細川伸也, 木村耕治, 林好一
応用物理学会春季学術講演会講演予稿集(CD-ROM)   5 Mar 2018   
白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   5 Mar 2018   
白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   1 Sep 2016   
白方祥, 八方直久, 細川伸也, 木村耕治, 林好一
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   1 Sep 2016   
弓達新治, 北村優天, 小山裕生, 宮田晃, 白方祥, 八方直久, 細川伸也, 林好一
応用物理学会春季学術講演会講演予稿集(CD-ROM)   3 Mar 2016   
白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   3 Mar 2016   
北村優天, 白方祥, 三宅秀人, 八方直久, 細川伸也, 林好一
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   31 Aug 2015   
弓達新治, 小山裕生, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   31 Aug 2015   
村上秀憲, 大塚健介, 弓達新治, 宮田晃, 白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   26 Feb 2015   
白方祥, 吉田正吾, 岸田貴志, 弓達新治, 宮田晃
応用物理学会春季学術講演会講演予稿集(CD-ROM)   26 Feb 2015   
寺迫智昭, 野本淳一, 牧野久雄, 白方祥, 山本哲也
応用物理学会春季学術講演会講演予稿集(CD-ROM)   26 Feb 2015   
小山裕生, 弓達新治, 田所眞尚, 竹内一磨, 宮田晃, 白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   26 Feb 2015   
北村優天, 高橋敏洋, 弓達新治, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   1 Sep 2014   
岸田貴志, 吉田正吾, 弓達新治, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   1 Sep 2014   
弓達新治, 小山裕生, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   1 Sep 2014   
野村貴俊, 下村哲, 石川史太郎, 福澤董, 白方祥, 近藤久雄
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   1 Sep 2014   
吉田正吾, 岸田貴志, 弓達新治, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   1 Sep 2014   
小山裕生, 弓達新治, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   1 Sep 2014   
野村貴俊, 下村哲, 福澤董, 白方祥, 近藤久雄
応用物理学会春季学術講演会講演予稿集(CD-ROM)   3 Mar 2014   
寺迫智昭, 小倉佳典, 矢木正和, 白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   3 Mar 2014   
寺迫智昭, 村上聡宏, 兵頭篤, 北峯誠之, 宮田晃, 白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   3 Mar 2014   
白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   3 Mar 2014   
弓達新治, 小山裕生, 宮田晃, 白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   3 Mar 2014   
村上聡宏, 北峯誠之, 兵頭篤, 寺迫智昭, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   31 Aug 2013   
倉重利規, 寺迫智昭, 宮田晃, 森雅美, 白方祥, 定岡芳彦
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   31 Aug 2013   
藤本翔平, 藤田崇史, 寺迫智昭, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   31 Aug 2013   
小山裕生, 弓達新治, 井上貴満, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   31 Aug 2013   
大前謙, 寺迫智昭, 山根基宏, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   31 Aug 2013   
野村貴俊, 神野泰輔, 谷勇気, 福澤董, 白方祥, 近藤久雄, 下村哲
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   31 Aug 2013   
吉田正吾, 太田寛之, 弓達新治, 宮田晃, 白方祥
応用物理学会秋季学術講演会講演予稿集(CD-ROM)   31 Aug 2013   
北峯誠之, 村上聡宏, 阿部亘, 寺迫智昭, 宮田晃, 白方祥
応用物理・物理系学会中国四国支部合同学術講演会講演予稿集   27 Jul 2013   
寺迫智昭, 村上聡宏, 北峯誠之, 矢木正和, 白方祥
電子情報通信学会技術研究報告   14 Jun 2013   
寺迫智昭, 藤本翔平, 小倉佳典, SONG Huaping, 牧野久雄, 矢木正和, 白方祥, 山本哲也
応用物理学会春季学術講演会講演予稿集(CD-ROM)   11 Mar 2013   
弓達新治, 小山裕生, 井上貴満, 宮田晃, 白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   11 Mar 2013   
北峯誠之, 村上聡宏, 篠原悠彰, 寺迫智昭, 宮田晃, 白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   11 Mar 2013   
外山利彦, 口山崇, 辻良太郎, 山本憲治, 小西崇文, 岡本博明, 寺井健悟, 中島悠斗, 堤保雄, 前西隆一郎, 新晶子, 弓達新治, 白方祥
応用物理学会春季学術講演会講演予稿集(CD-ROM)   11 Mar 2013   
太田寛之, 高木達矢, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
大前謙, 寺迫智昭, 正木誠, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
小倉佳典, 寺迫智昭, 藤本翔平, 宮田晃, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
新晶子, 西村裕太朗, 前西隆一郎, 矢木正和, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
倉重利規, 丸井秀之, 寺迫智昭, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
藤本翔平, 嶋田忠史, 寺迫智昭, 宮田晃, SONG Huaping, 牧野久雄, 山本哲也, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
高木達矢, 太田寛之, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
前西隆一郎, 吉田正吾, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
村上聡宏, 北峯誠之, 篠原悠彰, 寺迫智昭, 宮田晃, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
神野泰輔, 谷勇気, 福澤董, 白方祥, 近藤久雄, 下村哲
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
井上貴満, 小山裕生, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   27 Aug 2012   
神野泰輔, 谷勇気, 福澤董, 白方祥, 近藤久雄, 下村哲
応用物理学関係連合講演会講演予稿集(CD-ROM)   29 Feb 2012   
寺迫智昭, SONG Huaping, 牧野久雄, 山本哲也, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   29 Feb 2012   
弓達新治, 木村優介, 井上貴満, 冨家大樹, 宮田晃, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   29 Feb 2012   
倉重利規, 寺迫智昭, 中田裕華里, 矢木正和, 宮田晃, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   29 Feb 2012   
寺迫智昭, 村上聡宏, 谷崎晃史, 宮田晃, 矢木正和, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   29 Feb 2012   
太田寛之, 岩藤直貴, 弓達新治, 宮田晃, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   29 Feb 2012   
矢木正和, 川野翔平, 汐崎裕太, 岩藤直貴, 打越将来, 弓達新治, 宮田晃, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   29 Feb 2012   
小倉佳典, 寺迫智昭, 藤本翔平, 嶋田忠史, 宮田晃, 矢木正和, 白方祥
応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部支部学術講演会講演予稿集   2012   
倉重利規, 丸井秀之, 寺迫智昭, 矢木正和, 白方祥
応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部支部学術講演会講演予稿集   2012   
寺迫智昭, 村上聡宏, 北峯誠之, 篠原悠彰, 宮田晃, 矢木正和, 白方祥
応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部支部学術講演会講演予稿集   2012   
藤原哲郎, 寺迫智昭, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
小倉佳典, 寺迫智昭, 平良啓介, 谷口浩太, 中田裕華里, 宮田晃, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
打越将来, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
井上貴満, 木村優介, 中平康一, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
堤啓太朗, 新晶子, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
束村将, 高木達矢, 森岡泰紀, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
岩藤直貴, 本田隼士, 太田寛之, 石原広一, 前西隆一郎, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
寺迫智昭, 大前謙, 倉重利規, 谷崎晃史, 藤本翔平, 村上聡宏, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
神野泰輔, 谷勇気, 福澤董, 白方祥, 近藤久雄, 下村哲
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
高木達矢, 束村将, 太田寛之, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
汐崎裕太, 岩藤直貴, 打越将来, 弓達新治, 宮田晃, 白方祥, 矢木正和
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
谷勇気, 神野泰輔, 福澤董, 白方祥, 近藤久雄, 下村哲
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
高橋敏洋, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
竹川晃平, 寺迫智昭, 大前謙, 倉重利規, 谷崎晃史, 藤本翔平, 村上聡宏, 宮田晃, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   16 Aug 2011   
岩藤直貴, 本田隼士, 太田寛之, 石原広一, 前西隆一郎, 弓達新治, 宮田晃, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   9 Mar 2011   
寺迫智昭, 藤原哲郎, 宮田晃, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   9 Mar 2011   
谷勇気, 三谷善平, 福澤董, 白方祥, 近藤久雄, 下村哲
応用物理学関係連合講演会講演予稿集(CD-ROM)   9 Mar 2011   
寺迫智昭, 平良啓介, 谷口浩太, 中田裕華里, 宮田晃, 矢木正和, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   9 Mar 2011   
弓達新治, 木村優介, 井上貴満, 中平康一, 宮田晃, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   9 Mar 2011   
谷勇気, 神野泰輔, 福澤董, 白方祥, 近藤久雄, 下村哲
応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部支部学術講演会講演予稿集   2011   
本田隼士, 堤啓太朗, 竹川晃平, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   30 Aug 2010   
弓達新治, 木村優介, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   30 Aug 2010   
松永浩明, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   30 Aug 2010   
寺迫智昭, 栗林聖介, 小倉佳典, 高橋敏洋, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   30 Aug 2010   
岩藤直貴, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   30 Aug 2010   
打越将来, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   30 Aug 2010   
山中貴裕, 束村将, 中田裕華里, 寺迫智昭, 宮田晃, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   30 Aug 2010   
寺迫智昭, 谷口浩太, 平良啓介, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   30 Aug 2010   
藤原哲郎, 寺迫智昭, 中田裕華里, 宮田晃, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集(CD-ROM)   30 Aug 2010   
寺迫智昭, 栗林聖介, 小倉佳典, 高橋敏洋, 宮田晃, 白方祥
応用物理学会中国四国支部・日本物理学会中国支部・四国支部・日本物理教育学会中国四国支部支部学術講演会講演予稿集   31 Jul 2010   
谷口浩太, 寺迫智昭, 平良啓介, 矢木正和, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   3 Mar 2010   
寺迫智昭, 藤原哲郎, 宮田晃, 矢木正和, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   3 Mar 2010   
平良啓介, 谷口浩太, 寺迫智昭, 栗林聖介, 宮田晃, 矢木正和, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   3 Mar 2010   
森貞達志, 白方祥, 宮田晃, 中田時夫
応用物理学関係連合講演会講演予稿集(CD-ROM)   3 Mar 2010   
白方祥, 中田時夫
応用物理学関係連合講演会講演予稿集(CD-ROM)   3 Mar 2010   
寺迫智昭, 山中貴裕, 束村将, 宮田晃, 矢木正和, 白方祥
応用物理学関係連合講演会講演予稿集(CD-ROM)   3 Mar 2010   
松永浩明, 本田隼士, 弓達新治, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集   8 Sep 2009   
平良啓介, 栗林聖介, 束村将, 藤原哲郎, 宮田晃, 寺迫智昭, 谷口浩太, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集   8 Sep 2009   
森貞達志, 白方祥, 宮田晃, 中田時夫
応用物理学会学術講演会講演予稿集   8 Sep 2009   
弓達新治, 藤井孝信, 堤啓太朗, 木村優介, 宮田晃, 白方祥
応用物理学会学術講演会講演予稿集   8 Sep 2009   
寺迫智昭, 平良啓介, 栗林聖介, 束村将, 藤原哲郎, 宮田晃, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集   8 Sep 2009   
山中貴裕, 中山宏次郎, 寺迫智昭, 宮田晃, 矢木正和, 白方祥
応用物理学会学術講演会講演予稿集   8 Sep 2009