MISC

2005年2月

Area selective formation of magnetic nanodot arrays on Si wafer by electroless deposition

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
  • J Kawaji
  • ,
  • F Kitaizumi
  • ,
  • H Oikawa
  • ,
  • D Niwa
  • ,
  • T Homma
  • ,
  • T Osaka

287
開始ページ
245
終了ページ
249
記述言語
英語
掲載種別
DOI
10.1016/j.jmmm.2004.10.040
出版者・発行元
ELSEVIER SCIENCE BV

Electroless deposition process for fabricating magnetic dot arrays was studied. A patterned Si substrate with a SiO2 resist was produced by processes combined with electron-beam lithography and reactive ion etching. By immersing the patterned Si substrate into a CoNiP electroless deposition bath, CoNiP was deposited only into the patterned pores, demonstrating a satisfactory area selectivity of the deposition. Excellent uniformity on the CoNiP deposition into the patterned pores with diameter less than 100 nm and high aspect ratio (> 5) was achieved by applying chemical activation processes using a Pd solution prior to the deposition. The CoNiP dot arrays exhibited higher perpendicular squareness ratio than that of CoNiP continuous film and showed a clear magnetization state at DC-magnetized state, which originated from the shape anisotropy caused by high aspect ratio of the dot patterns. (C) 2004 Elsevier B.V. All rights reserved.

Web of Science ® 被引用回数 : 10

リンク情報
DOI
https://doi.org/10.1016/j.jmmm.2004.10.040
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000227048000042&DestApp=WOS_CPL

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