論文

査読有り
2020年12月9日

Solvent-Assisted Friction Transfer Method for Fabricating Large-Area Thin Films of Semiconducting Polymers with Edge-On Oriented Extended Backbones

ACS Applied Materials and Interfaces
  • Kumari N
  • ,
  • Pandey M
  • ,
  • Syafutra H
  • ,
  • Nagamatsu S
  • ,
  • Nakamura M
  • ,
  • Pandey S.S

12
49
開始ページ
55033
終了ページ
55043
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1021/acsami.0c14874

© Recent past has witnessed huge scientific efforts aiming toward enhancing in-plane charge transport by unidirectional orientation of conjugated polymer (CP) backbones adopting various techniques. However, in most of the existing methods, excess amounts of toxic halogenated solvents and preaggregation in solution are inevitable, which are the main bottlenecks toward large-scale fabrication. Solvent-assisted friction transfer (SAFT) is being reported as a novel method and improvisation over conventional friction transfer to expand its versatility. In this method, application of a small amount of the solvent (∼3 μL) during drawing not only leads to the entirely changed film morphology and molecular orientation but also addresses the existing substrate compatibility issues. Utilizing poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]-thiophene] as a representative CP under SAFT technique, films with extended backbone and edge-on orientation was successfully fabricated, which was confirmed by various characterization tools such as X-ray diffraction, polarized absorption, and polarized Raman spectroscopies. Further, anisotropic charge transport in these films was investigated by fabricating organic field-effect transistors and the role of contact resistance was also studied. Slight solvent use, compatibility with various substrates, and film fabrication with controlled orientation, and after validation of its generality on different CPs, SAFT can be expected to open new avenues in the area of printed electronics.

リンク情報
DOI
https://doi.org/10.1021/acsami.0c14874
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85097812392&origin=inward
ID情報
  • DOI : 10.1021/acsami.0c14874
  • ISSN : 1944-8244
  • eISSN : 1944-8252

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