2020年4月
Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation
Japanese Journal of Applied Physics
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- 巻
- 59
- 号
- SG
- 記述言語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.35848/1347-4065/ab6e07
In GaAs and AlAs atomic-layer epitaxy (ALE), it was experimentally found that the AlAs layer is deposited in two monolayers (2 ML) per ALE cycle, while the GaAs layer is deposited in 1 ML. In order to elucidate this growth mechanism, we compared the stability of Ga and Al atoms on the GaAs(100) surface by the first-principles total energy calculation based on density functional theory. Comparing adsorption energies, we found that Ga and Al stably adsorbed on the As-Terminated GaAs surface in 1 ML. It was also revealed that Al can adsorb on an As-Terminated GaAs(100) surface in 2 ML because excess Al atoms can be adsorbed by forming a metallic Al(110) plane-like structure. These results well explain the experimental results for ALE-GaAs and ALE-AlAs.
- リンク情報
- ID情報
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- DOI : 10.35848/1347-4065/ab6e07
- ISSN : 0021-4922
- eISSN : 1347-4065
- SCOPUS ID : 85083316323